Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel
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LBAV70WT1G
3000/Tape
LBAV70WT3G
10000/Tape
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202319A
Abstract: No abstract text available
Text: EVALUATION BOARD DATA SHEET EV183 Evaluation Board for the AAT2822/2823/2824/2825 TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer Introduction The AAT282x family AAT2822, AAT2823, AAT2824, AAT2825 of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor (TFT) liquid-crystal display (LCD). The AAT282x family
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EV183
AAT2822/2823/2824/2825
AAT282x
AAT2822,
AAT2823,
AAT2824,
AAT2825)
AAT282x-1
202319A
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PDF
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AN1294
Abstract: PD60015 PD60015S
Text: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
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PD60015
PD60015S
IS-97
PD60015
PowerSO-10RF.
AN1294
PD60015S
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PDF
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pd55035
Abstract: smd transistor code A4
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55035
PD55035S
PowerSO-10RF.
smd transistor code A4
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AN1294
Abstract: PD60030 PD60030S
Text: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
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PD60030
PD60030S
IS-97
PD60030
PowerSO-10RF.
AN1294
PD60030S
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PDF
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smd transistor code A4
Abstract: AN1294 PD60004 PD60004S
Text: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
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PD60004
PD60004S
IS-97
PD60004
PowerSO-10RF.
smd transistor code A4
AN1294
PD60004S
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PDF
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AN1294
Abstract: LET20015 LET90015
Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20015
IS-97
PowerSO-10RF
LET90015
LET20015
AN1294
LET90015
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PDF
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AN1294
Abstract: LET20015 LET90015
Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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Original
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LET20015
IS-97
PowerSO-10RF
LET90015
LET20015
AN1294
LET90015
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type N-Channel 30-V D-S MOSFET KI2304DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source
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KI2304DS
OT-23
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KI2304DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source
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KI2304DS
OT-23
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Untitled
Abstract: No abstract text available
Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55025
PD55025S
PowerSO-10RF
PD55025
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smd marking 58a
Abstract: smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL
Text: Transistors IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 28 m VGS = 10V RDS(ON) 43 m (VGS = 4.5V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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KO3404
OT-23
smd marking 58a
smd transistor a4
a4 smd transistor
smd transistor marking A4
KO3404
SMD TRANSISTOR A4 S
DIODE smd marking A4
smd diode A4 marking on IC
SMD TRANSISTOR MARKING 28
DIODE EJL
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smd code ND e3
Abstract: No abstract text available
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55035
PD55035S
PowerSO-10RF.
smd code ND e3
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PDF
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smd code ND e3
Abstract: No abstract text available
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55035
PD55035S
PowerSO-10RF.
smd code ND e3
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PD20010
Abstract: PD20010-E AN1294 J-STD-020B
Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection
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PD20010-E
2002/95/EC
PowerSO-10RF
PD20010-E
PD20010
AN1294
J-STD-020B
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NV SMD TRANSISTOR
Abstract: AN1294 J-STD-020B LET9045S LET9045STR LET9045TR
Text: LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V ■ Plastic package ■
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LET9045
2002/95/EC
PowerSO-10RF
LET9045
NV SMD TRANSISTOR
AN1294
J-STD-020B
LET9045S
LET9045STR
LET9045TR
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PD20010-E
Abstract: PD20010
Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package
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PD20010-E
2002/95/EC
PowerSO-10RF
PD20010-E
PD20010
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capacitor 220 uf
Abstract: No abstract text available
Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead
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PD57060
PD57060S
PD57060S
PowerSO-10RF.
capacitor 220 uf
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E2 SMD Transistor
Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883
Text: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100|oA Low Operating Supply C urrent.
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OCR Scan
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HM-65642
HM-65642
80C86
80C88
E2 SMD Transistor
SMD A8 Transistor
smd transistor 8c
smd transistor A8
SMD a7 Transistor
hm1-65642-883
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PD85015-E
Abstract: PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF
Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■
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PD85015-E
PD85015S-E
2002/95/EC
PowerSO-10RF
PD85015-E
PD85015
PD85015s-e
AN1294
JESD97
J-STD-020B
PowerSO-10RF
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PDF
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Untitled
Abstract: No abstract text available
Text: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20030S
IS-97
LET20030S
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Untitled
Abstract: No abstract text available
Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead
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PD57060
PD57060S
PowerSO-10RF
PD57060S
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PDF
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PD85015s-e
Abstract: PD85015 AN1294 PD85015-E
Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection
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Original
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PD85015-E
PD85015S-E
2002/95/EC
PowerSO-10RF
PD85015-E
PD85015s-e
PD85015
AN1294
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PDF
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Untitled
Abstract: No abstract text available
Text: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package
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PD85015-E
2002/95/EC
PowerSO-10RF
PD85015-E
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