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    A35-1 TRANSISTOR Search Results

    A35-1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A35-1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A35-1

    Abstract: CA35-1 SMA35-1
    Text: Cascadable Amplifier 2 to 2400 MHz A35-1/ SMA35-1 V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • ULTRA WIDE BANDWIDTH 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL +9.5 dBm (TYP.) Description The A35-1 RF amplifier is a discrete thin film hybrid design,


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    PDF A35-1/ SMA35-1 A35-1 MIL-STD-883 CA35-1 SMA35-1

    A35-1

    Abstract: CA35-1 SMA35-1
    Text: A35-1 / SMA35-1 Cascadable Amplifier 2 to 2400 MHz Rev. V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • ULTRA WIDE BANDWIDTH 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL +9.5 dBm (TYP.) Description The A35-1 RF amplifier is a discrete thin film hybrid design,


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    PDF A35-1 SMA35-1 MIL-STD-883 CA35-1 SMA35-1

    A35-1

    Abstract: CA35-1 SMA35-1 a35-1 TRANSISTOR
    Text: A35-1/SMA35-1 2 TO 2400 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · ULTRA WIDE BANDWIDTH 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL +9.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/03)* Characteristics Typical Frequency


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    PDF A35-1/SMA35-1 A35-1 SMA35-1 CA35-1 A35-1 CA35-1 SMA35-1 a35-1 TRANSISTOR

    mmic a35

    Abstract: SGA-3586 Drivers for CATV Amplifiers
    Text: Preliminary Product Description SGA-3586 Stanford Microdevices’ SGA-3586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3586 SGA-3586 50-ohm DC-5000 EDS-101382 mmic a35 Drivers for CATV Amplifiers

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 2000 MHz A35/ SMA35 V3 Features Product Image • MEDIUM OUTPUT LEVEL +9 dBm TYP. • WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Description The A35 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing


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    PDF SMA35 MIL-STD-883

    CA35

    Abstract: SMA35
    Text: A35 / SMA35 Cascadable Amplifier 10 to 2000 MHz Rev. V3 Features Product Image • MEDIUM OUTPUT LEVEL +9 dBm TYP. • WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Description The A35 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing


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    PDF SMA35 MIL-STD-883 CA35 SMA35

    CA35

    Abstract: SMA35
    Text: A35/SMA35 10 TO 2000 MHz CASCADABLE AMPLIFIER • MEDIUM OUTPUT LEVEL: +9 dBm TYP. · WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)


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    PDF A35/SMA35 SMA35 CA35 SMA35

    SMA35

    Abstract: CA35
    Text: A35/SMA35 10 TO 2000 MHz CASCADABLE AMPLIFIER • MEDIUM OUTPUT LEVEL: +9 dBm TYP. · WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)


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    PDF A35/SMA35 SMA35 SMA35 CA35

    SGA-3563

    Abstract: No abstract text available
    Text: Preliminary Preliminary SGA-3563 Product Description DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices’ SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon


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    PDF SGA-3563 DC-5000 SGA-3563 50-ohm EDS-101496

    germanium transistor ac 129

    Abstract: SGA-3563
    Text: Preliminary Preliminary Product Description SGA-3563 Stanford Microdevices’ SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3563 SGA-3563 50-ohm DC-5000 EDS-101496 germanium transistor ac 129

    pal 007a

    Abstract: LA7458 BTA28 LA7458W FM MICROPHONE sw53 oscillator A0642 microphone amplifier with alc BFM12 ta42
    Text: Ordering number : ENA0642 Monolithic Linear IC 8mm VCR monaural audio signal processing system LA7458W Overview The LA7458W is a 8mm VCR monaural audio signal processing system. Functions • Speaker amplifier • Monaural audio system with built-in bandpass filter


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    PDF ENA0642 LA7458W LA7458W A0642-22/22 pal 007a LA7458 BTA28 FM MICROPHONE sw53 oscillator A0642 microphone amplifier with alc BFM12 ta42

    LA7458

    Abstract: TA-42 BTA60 TRANSISTOR A52 LA7458W
    Text: Ordering number : ENA0642 Monolithic Linear IC 8mm VCR monaural audio signal processing system LA7458W Overview The LA7458W is a 8mm VCR monaural audio signal processing system. Functions • Speaker amplifier • Monaural audio system with built-in bandpass filter


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    PDF ENA0642 LA7458W LA7458W A0642-22/22 LA7458 TA-42 BTA60 TRANSISTOR A52

    B34 transistor

    Abstract: 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R32C
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


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    PDF CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER B34 transistor 50MHZ CX20202A-1 CXD1178Q CXD2303Q R32C

    C40C

    Abstract: b24 b03 TRANSISTOR A63 TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303AQ CXD2303Q R30A
    Text: CXD2303AQ 8-bit 3-channel 50 MSPS Video A/D Converter with clamp function Description The CXD2303AQ is an 8-bit 3-channel CMOS A/D converter for video with synchronizing digital clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum


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    PDF CXD2303AQ CXD2303AQ 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER C40C b24 b03 TRANSISTOR A63 TRANSISTOR A64 50MHZ CX20202A-1 CXD1178Q CXD2303Q R30A

    WJ-A35-1

    Abstract: WJ-CA35-1
    Text: WJ-A35-1 / SMA35-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRA WIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +9.5 dBm (TYP.) Outline Drawings A35-1 Specifications 0.200 (5.08) Guaranteed Typical Characteristics


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    PDF WJ-A35-1 SMA35-1 A35-1 WJ-CA35-1

    adt610

    Abstract: AD9610 AD9610BH AD9610TH MA9003
    Text: Wide Bandwidth, Fast Settling Operational Amplifier ANALOG DEVICES _ _ _ _ _ _ _ _ _ AD9610 FUNCTIONAL BLOCK DIAGRAM FEATURES Ultrastable U nity Gain Bandwidth 100MHz Bandwidth Is Independent of Gain Settings 18ns Settling to 0.1% Low Power Dissipation (630rrtW)


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    PDF AD9610 100MHz) 630rrfW) -59dBc 20MHz, 78dBc -100dBc 10kHz) AD9610 adt610 AD9610BH AD9610TH MA9003

    STF 410 B 2 A

    Abstract: 16698
    Text: TOSHIBA -CDISCRETE/OPTOJ Ti 9097250 TOSHIBA <DISCRETE/OPTO> ¿ ÿ o s h ih t DE I t DTTBSO ODlbbTö 99D 16698 SEMICONDUCTOR DTSS-oq TOSHIBA FIELD EFFECT TRANSISTOR 2SK529 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm


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    PDF 100nA T0-220 STF 410 B 2 A 16698

    BSN3005L

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g gate s source d drain


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    PDF BSN3005L 7110aeb 011004b 711002b BSN3005L

    TRANSISTOR BC 158

    Abstract: transistor BC 157 BC 148 transistor WJ-A35 transistor BC 154
    Text: uud A35/SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Outline Drawings A35 Specifications* 0.450 r, (1U1) U 0 200 (5.06) Characteristics Frequency (Min.)


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    PDF A35/SMA35 1-800-WJ1-4401 TRANSISTOR BC 158 transistor BC 157 BC 148 transistor WJ-A35 transistor BC 154

    BSN3005L

    Abstract: A35 diode
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005L FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 2 g s gate • Direct interface to C-MOS, TTL etc. 3 d drain DESCRIPTION


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    PDF BSN3005L 711002b 0110D4b 711DfiEbi 011DD4? BSN3005L A35 diode

    WJ-A35

    Abstract: No abstract text available
    Text: WJ-A35 / SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO + 20 VOLTS Outline Drawings A35 Specifications* Characteristics 0.200 (5.08) Guaranteed Typical


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    PDF WJ-A35 SMA35 50-ohm 0D07D42

    MCP3021Z

    Abstract: MCP3020Z CNY17-3Z MCT2201Z CNY17-1Z MCP3022Z CNY17-2Z C2090 cny17-4z MCT2200Z
    Text: QUALITY • R TECHNOLOGIES VDE APPROVED h ig h -vo ltag e o pto co uplers VDE APPROVED OPTOCOUPLERS jm PACKAGE DIMENSIONS Quality Technologies Corporation's optocoupler can be supplied with approval to VDE component standard 0883/6.80 and equipment standards DIN IEC 435/VDE


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    PDF 435/VDE 380/VDE VAC/5300 MCT2200ZW. H11AVIA, H11AV2A, H11AV3A 8916R19& MCP3021Z MCP3020Z CNY17-3Z MCT2201Z CNY17-1Z MCP3022Z CNY17-2Z C2090 cny17-4z MCT2200Z

    2SA1550

    Abstract: No abstract text available
    Text: Power T ransistors 2SA1550 2SA1550 Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Switching Unit ! n • Features 3.7max 7.3max. • High DC cu rrent gain Iife 3.2max. • High speed switching • High collector-base voltage (V 0.9 ± 0 .1


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    PDF 2SA1550 32fl5S GQlbl42 2SA1550

    Mosfet FTR 03-E

    Abstract: No abstract text available
    Text: Transistors Small switching 1OOV, 5A 2SK2504 • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 6.5+0.2 0.5+0.1 3) W ide SOA (safe operating area). CO t- 4) Low-voltage drive (4V). 5) Easily designed drive circuits.


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    PDF 2SK2504 SC-63 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c Mosfet FTR 03-E