2SA1862
Abstract: 2SA1807 A343
Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307
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2SA1807
2SA1862
96-102-A331)
96-109-A343)
2SA1862
2SA1807
A343
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2SA1807
Abstract: A331 2SA1862 96-109-A343
Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors Packages 45
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2SA1807
2SA1862
96-102-A331)
96-109-A343)
2SA1807
A331
2SA1862
96-109-A343
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TRANSISTOR D400
Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)
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2SA1807
2SA1862
96-102-A331)
96-109-A343)
2SA1812
2SA1727
2SA1776
96-609-A313)
2SA1834
2SC5001
TRANSISTOR D400
D400 npn transistor
D400 transistor
TRANSISTOR NPN D400
D400 npn
transistor D302
2sd2166
high hfe transistor
NPN transistor 2sd1863
Transistor PNP VCEO 400V
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2SA1807
Abstract: A343 2SA1862
Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the
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2SA1807
2SA1862
96-102-A331)
96-109-A343)
2SA1807
A343
2SA1862
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TRANSISTOR A331
Abstract: No abstract text available
Text: Cascadable Amplifier 2 to 2400 MHz A33-1/ SMA33-1 V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing
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A33-1/
SMA33-1
A33-1
MIL-STD-883
TRANSISTOR A331
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TRANSISTOR A331
Abstract: A331 transistor A33-1 CA33-1 SMA33-1 ON A33
Text: A33-1 / SMA33-1 Cascadable Amplifier 2 to 2400 MHz Rev. V3 Features Product Image • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. • MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Description The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing
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A33-1
SMA33-1
MIL-STD-883
TRANSISTOR A331
A331 transistor
CA33-1
SMA33-1
ON A33
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A331 transistor
Abstract: No abstract text available
Text: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)
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A33-1/SMA33-1
50-ohm
A33-1
SMA33-1
CA33-1
A331 transistor
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TRANSISTOR A331
Abstract: A33-1 CA33-1 SMA33-1
Text: A33-1/SMA33-1 2 TO 2400 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 1-2600 MHz TYP. · MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)
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A33-1/SMA33-1
A33-1
SMA33-1
CA33-1
TRANSISTOR A331
A33-1
CA33-1
SMA33-1
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11Z4
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404
DCS1800
PCS1900/Cellular
MRF6404
11Z4
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TRANSISTOR A331
Abstract: 395C-01
Text: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
TRANSISTOR A331
395C-01
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TRANSISTOR A331
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
DCS1800
PCS1900/Cellular
MRF6404
MRF6404/D
TRANSISTOR A331
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TRANSISTOR A331
Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
MRF6404K
MRF6404
DCS1800
PCS1900/Cellular
MRF6404/D*
TRANSISTOR A331
transistor 31C
37281
ADC 50 Ghz
MRF6404K
A153
A331
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
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capacitor 104 Z5
Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to
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MRF6404/D
MRF6404
MRF6404
DCS1800
PCS1900/Cellular
capacitor 104 Z5
resistor A331
TRANSISTOR A331
A153
A331
motorola 572 transistor
150 watts power amplifier layout
ATC 100A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics
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MRF6404/D
MRF6404
MRF6404
DCS1800
PCS1900/Cellular
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MAAM-008863
Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America
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40W267
MAAM-008863
MAMU-009156
transistor MY52
200W MOSFET POWER AMP
transistor MY51
GPS Antenna AT65
MA4ST350
MADR-007690-DR0002
a74 sot-89
SM4T mixer
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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PH1819-60
Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies
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heds 5310
Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»
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Y00308
Abstract: 8003 qualcomm 1110
Text: DSP56800E 16-Bit Digital Signal Processor Core Reference Manual DSP56800ERM/D Rev. 2.0, 12/2001 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any
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DSP56800E
16-Bit
DSP56800ERM/D
Y00308
8003
qualcomm 1110
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DSP56800E 16-Bit Digital Signal Processor Core Reference Manual
Abstract: hEX INVERTER DSP56800 DSP56800E motorola K 626 QUALCOMM Reference manual block diagram of qualcomm
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56800E 16-Bit Digital Signal Processor Core Reference Manual DSP56800ERM/D Rev. 2.0, 12/2001 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.
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DSP56800E
16-Bit
DSP56800ERM/D
DSP56800E
DSP56800E 16-Bit Digital Signal Processor Core Reference Manual
hEX INVERTER
DSP56800
motorola K 626
QUALCOMM Reference manual
block diagram of qualcomm
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capacitor ase 104
Abstract: Z808 w188 trimm resistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.
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MRF6404
DCS1800
1900/Cellular
MRF6404K
Collector-E100A
MRF6404K
capacitor ase 104
Z808
w188
trimm resistor
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RF640
Abstract: ez808 transistor b 745 RF6404 capacitor 104 Z5 R/Vitramon
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. 30 W , 1.88 GHz
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MRF6404
DCS1800
PCS1900/Cellular
MRF6404K
RF6404
RF6404K
F6404
MRF6404K
RF640
ez808
transistor b 745
capacitor 104 Z5
R/Vitramon
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Untitled
Abstract: No abstract text available
Text: u u U A33-1 / SMA33-1 2 to 2400 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ ULTRAWIDE BANDWIDTH: 1 - 2600 MHz TYP. ♦ MEDIUM OUTPUT LEVEL: +6 dBm (TYP.) Outline Drawings Specifications’* Characteristics Frequency (Min.) Small Signal Gain (Min.)
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A33-1
SMA33-1
A33-1
50-ohm
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T he M R F 6 4 0 4 is d e sig ned fo r 26 vo lts m icro w a ve large sig na l, com m o n em itter, cla ss AB linea r a m p lifie r a p p lica tio n s op e ra tin g in th e range 1.8 to
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MRF6404/D
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