Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 S0 6 8 0 RB/K A3 S0 6 8 0 RFB Fa irchild Pow e r Sw it ch FPS Features Description • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external
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CA3096
Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
Text: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096,
CA3096A,
CA3096C
CA3096C,
CA3096A
CA3096C
CA3096
transistor equivalent ca3096
40841
thyristor firing circuits
3096A
CA3096E
CA3096AE
40841 MOSFET
CA3096AM96
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Untitled
Abstract: No abstract text available
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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1-Jun-2004
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zener 5.1 B2
Abstract: a3 6 zener c2 zener
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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1-Jan-2006
zener 5.1 B2
a3 6 zener
c2 zener
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Untitled
Abstract: No abstract text available
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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1-Nov-2006
DO-35
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zener 3.3 b2
Abstract: Zener Diode C3 5 zener 5.1 B2 zener diode 2.7 b2 zener 2a1 zener diode 2.4 b2 2A2 zener diode c3 zener 4.7 B2 zener 5.6 B1 zener diode
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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AC100
Abstract: T2525 T2525N038 T2525N238 T2525N638
Text: Features • • • • • • No external components except PIN diode Supply-voltage range: 4.5 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Enhanced immunity against ambient light disturbances Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by Zener diode
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T2525
T2525
17-Oct-01
AC100
T2525N038
T2525N238
T2525N638
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marking A3 Taiwan semiconductor
Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.
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REJ03G0043-0300Z
marking A3 Taiwan semiconductor
B2 Zener
Zener IT 243
REJ03G0043-0300Z
a3 6 zener
B1 5.6 zener
B2 marking code Zener
B1.66
A211-1
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Zener diode MARKING H5
Abstract: No abstract text available
Text: MCC H2 Series THRU H36 Series omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • 500 mW Zener Diode 1.9 to 37.2 Volts Low Leakage Low Zener Impedance
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c2 zener renesas
Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0184-0300Z
ADE-208-120B)
c2 zener renesas
B2 Zener
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS24
HZS30
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B2 Zener
Abstract: REJ03G0180-0300Z HZ2A1
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0180-0300Z Previous: ADE-208-117B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
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REJ03G0180-0300Z
ADE-208-117B)
DO-35
B2 Zener
REJ03G0180-0300Z
HZ2A1
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Untitled
Abstract: No abstract text available
Text: MCC LSH2 Series THRU LSH36 Series omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • 500 mW Zener Diode 1.9 to 37.2 Volts Low Leakage Low Zener Impedance
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LSH36
LSH36
LSH30
LSH24
LSH20
LSH16
LSH12
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GRZZ0002ZB-A
Abstract: HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ11B
Text: HZ Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0180-0400 Rev.4.00 Jul 03, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.
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REJ03G0180-0400
DO-35
GRZZ0002ZB-A
GRZZ0002ZB-A
HZ11
HZ12
HZ15
HZ16
HZ18
HZ20
HZ22
HZ24
HZ11B
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ZENER DIODE 1233
Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
Text: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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REJ03G0184-0400
GRZZ0002ZC-A
ZENER DIODE 1233
GRZZ0002ZC-A
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS22
HZS24
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Zener Diode B1 axial
Abstract: Zener do35 marking code a2 zener 5.1 B2 db238 Zener Diode A2 axial zener diode 5.6 b3
Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units
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DO-35
TC36-3.
DB-238
2012/A
Zener Diode B1 axial
Zener do35 marking code a2
zener 5.1 B2
db238
Zener Diode A2 axial
zener diode 5.6 b3
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HZU30L-1
Abstract: Zener Diode B1 zener diode 332
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
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REJ03G0043-0200Z
HZU30L-1
Zener Diode B1
zener diode 332
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HZ11
Abstract: HZ12 HZ15 HZ16 HZ20 HZ24 HZ30 HZ36 39b2
Text: HZ H Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0181-0100Z (Previous: ADE-208-794) Rev.1.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
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REJ03G0181-0100Z
ADE-208-794)
DO-35
HZ11
HZ12
HZ15
HZ16
HZ20
HZ24
HZ30
HZ36
39b2
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Untitled
Abstract: No abstract text available
Text: LH Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability 4. Small surface mounting type Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature
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1-Jan-2006
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HZU-L Series
Abstract: zener mark code A2 zener diode marking 333 361 Zener diode marking zener diode 332
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0100Z Rev.1.00 Jun.05.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
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REJ03G0043-0100Z
HZU-L Series
zener mark code A2
zener diode marking 333
361 Zener diode marking
zener diode 332
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 5S E b3b7SSS D 0DÔ1337 T Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener Overvoltage Transient Su ppressors . . . the 1 .5 S M C 6 .8 se rie s is d e sig n e d to protect vo lta ge sensitive c o m p o n e n ts from high
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5SMC200,
fl/89
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0281 002 700
Abstract: Matsua led LNJ090W3KRA3
Text: Sheet No. 1/6 IS ^Ê ttli/T e n ta tiv e Specification Prepared by n nflíá /T ype Number: L N J 0 9 0 W 3 K R A 3 ÍÜ T ÍÍE —n n lí/Matsu sh ita Unified Parts Number : LN J090W 3KR A3 ÏSSÜ/Type Checked by Approve A m M.Nozoe T.Maeda T.lkeda K/White Light Emitting Diode
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LNJ090W3KRA3
LNJ090W3KRA3
KB-H-040-01A
J090W3KRA3
0281 002 700
Matsua led
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lnj0y0f9k
Abstract: Tentative OI60 MATSUA PANASONIC 08q1 Matsua LED
Text: Sheet No. 1/6 ^/T e n ta tiv e Specification Prepared bJ K npii=S/Type Number: LN JO YO F9KR A3 fô T i^ E — nnS/M atsushita Unified Parts Number : LN J0Y 0F9K R A 3 Í I SU/Type Checked by Approved I t. jL L blí % 0l Y.lde ^T . T.Maeda T.lkeda -O r— F/W hite Light Emitting Diode
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55/Top
KB-H-040-01A
lnj0y0f9k
Tentative
OI60
MATSUA PANASONIC
08q1
Matsua LED
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HITACHI HZ
Abstract: zener diode 2.4 b2
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
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ADE-208-117A
DO-35
HZ36-3.
HITACHI HZ
zener diode 2.4 b2
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diode Lz 99
Abstract: HITACHI HZS
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-120A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
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ADE-208-120A
Storag25
HZS36-3.
diode Lz 99
HITACHI HZS
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