Q68000-A4334
Abstract: No abstract text available
Text: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP
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fi23b3S0
Q68000-A4335
Q68000-A4334
Q68000-A6481
Q68000-A6473
103mA
A23b32Q
/IF6-10
Q68000-A4334
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.
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BFS17P
62702-F940
OT-23
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Untitled
Abstract: No abstract text available
Text: 32E ÔE3b320 T> DG17207 b m S I P PZTA 42; P Z TA 43 NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SEM ICONDS T - - 5 3 -3 -1 • High breakdown voltage • Low collector -emitter saturation voltage • Complementary types: PZTA 92/93 PNP Marking
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E3b320
DG17207
12-mm
Q62702-
Z2035
OT-223
Q62702-Z2036
0Q1721Q
T-33-29
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Untitled
Abstract: No abstract text available
Text: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk
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23b32Ã
23b320
Q017312
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BFR92P
Abstract: No abstract text available
Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.
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0G17GQ2
BFR92P
OT-23
BFR92P
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Untitled
Abstract: No abstract text available
Text: 35E D • ÔE3b320 OQlbäBä 3 « S I P Silicon N-Channel MOSFET Triode a.S' SIEMENS/ SPCLi SEMICONDS BF 999 ~ _ For high-frequency stages up to 3 0 0 MHz, preferably in FM applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm tap e
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E3b320
62702-F38
Q62702-F1132
A23b32Q
T-31-25
ff22s
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Untitled
Abstract: No abstract text available
Text: BFN 17 BFN 19 PNP Silicon High-Voltage Transistors 35E D • SS3b350 DGlbfiH? 4 « S I P SIEMENS/ SPCLi SEMICONDS • • • • Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emltter saturation voltage
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SS3b350
Q62702-F695
Q62702-F697
Q62702-F884
Q62702-F1057
A23b32Q
BFN17
T-31-23
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CF739 R
Abstract: CF739 siemens gaas fet
Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain
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023ti3SQ
0G17342
CF739
00MHz
23b32ü
Q017347
CF739
CF739 R
siemens gaas fet
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b320 001727b 3 «SIP NPN Silicon Transistors for High Voltages -r^ - 1 7 SIEMENS/ SPCLi SEMICONDS • • • SMBTA42 SMBTA 43 High breakdown voltage Low collector-emitter saturation voltage Complementary types: S M B TA 92, S M B T A 93 PNP
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23b320
001727b
SMBTA42
Q68000-A4329
Q68000-A4330
Q68000-A6478
Q68000-A6482
A23b32Q
Q017E7^
SMBTA43
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