Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    A2 SOT-323 MOSFET Search Results

    A2 SOT-323 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    A2 SOT-323 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-353 MARKING 8v

    Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002WT1G SC-70) C330mm 360mm SOT-353 MARKING 8v diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23

    A2 SOT-323 mosfet

    Abstract: marking N1 sc70
    Text: MMBF2201NT1, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are


    Original     		PDF MMBF2201NT1, NVF2201N SC-70/SOT-323 SC-70/ OT-323 AEC-Q101 MMBF2201NT1/D A2 SOT-323 mosfet marking N1 sc70

    MMBF2201NT1G

    Abstract: MMBF2201NT1 On semiconductor date Code sot-323 marking N1 sc70
    Text: MMBF2201NT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are


    Original     		PDF MMBF2201NT1 SC-70/SOT-323 SC-70/SOT-323 MMBF2201NT1/D MMBF2201NT1G MMBF2201NT1 On semiconductor date Code sot-323 marking N1 sc70

    MMBF2202PT1G

    Abstract: A1 SOT323 MOSFET P-CHANNEL MMBF2202PT1 MMBF2202PT1G SOT-323 A2 SOT-323 mosfet
    Text: MMBF2202PT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are


    Original     		PDF MMBF2202PT1 SC-70/SOT-323 SC-70/SOT-323 MMBF2202PT1/D MMBF2202PT1G A1 SOT323 MOSFET P-CHANNEL MMBF2202PT1 MMBF2202PT1G SOT-323 A2 SOT-323 mosfet

    Untitled

    Abstract: No abstract text available
    Text: MMBF2201NT1, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are


    Original     		PDF MMBF2201NT1, NVF2201N 70/SOTâ MMBF2201NT1/D

    Untitled

    Abstract: No abstract text available
    Text: MMBF2201N, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are


    Original     		PDF MMBF2201N, NVF2201N SC-70/SOT-323 SC-70/SOT-323 MMBF2201NT1/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF LBSS84WT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF AEC-Q101 LBSS84WT1G S-LBSS84WT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723)

    LBSS84WT1G

    Abstract: marking td sot323
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF LBSS84WT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner LBSS84WT1G marking td sot323

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF AEC-Q101 LBSS84WT1G S-LBSS84WT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723)

    Untitled

    Abstract: No abstract text available
    Text: NTS4409N, NVS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • • • • http://onsemi.com Advance Planar Technology for Fast Switching, Low RDS on Higher Efficiency Extending Battery Life AEC−Q101 Qualified and PPAP Capable − NVS4409N


    Original     		PDF NTS4409N, NVS4409N SC-70/SOT-323 AEC-Q101 25plicable NTS4409N/D

    LBSS84WT1G

    Abstract: A2 SOT-323 mosfet
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load


    Original     		PDF LBSS84WT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner LBSS84WT1G A2 SOT-323 mosfet

    transistor 6c x

    Abstract: marking code 6c marking 6C
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage


    Original     		PDF L2N7002WT1G transistor 6c x marking code 6c marking 6C

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002WT1G SC-70)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G S-L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring


    Original     		PDF L2N7002WT1G S-L2N7002WT1G AEC-Q101 SC-70) L2N7002WT3G S-L2N7002WT3G

    NTS4409N

    Abstract: NTS4409NT1G
    Text: NTS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • Advance Planar Technology for Fast Switching, Low RDS on • Higher Efficiency Extending Battery Life • This is a Pb−Free Device http://onsemi.com


    Original     		PDF NTS4409N SC-70/SOT-323 SC-70 NTS4409N/D NTS4409N NTS4409NT1G

    Untitled

    Abstract: No abstract text available
    Text: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available


    Original     		PDF NTS2101P NTS2101P/D

    NTS2101P

    Abstract: NTS2101PT1 NTS2101PT1G A1 SOT323 MOSFET P-CHANNEL
    Text: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available


    Original     		PDF NTS2101P SC-70 SC-70 NTS2101P/D NTS2101P NTS2101PT1 NTS2101PT1G A1 SOT323 MOSFET P-CHANNEL

    Untitled

    Abstract: No abstract text available
    Text: NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS on −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available


    Original     		PDF NTS4101P NTS4101P/D

    NTS4101P

    Abstract: NTS4101PT1 NTS4101PT1G
    Text: NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS on −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available


    Original     		PDF NTS4101P SC-70 SC-70 NTS4101P/D NTS4101P NTS4101PT1 NTS4101PT1G

    P-Channel 1.8-V (G-S) MOSFET sot-323

    Abstract: NTS4101P NTS4101PT1 NTS4101PT1G A1 SOT323 MOSFET P-CHANNEL
    Text: NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS on −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available


    Original     		PDF NTS4101P SC-70 SC-70 NTS4101P/D P-Channel 1.8-V (G-S) MOSFET sot-323 NTS4101P NTS4101PT1 NTS4101PT1G A1 SOT323 MOSFET P-CHANNEL

    NTS4409N

    Abstract: NTS4409NT1G
    Text: NTS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 Features • Advance Planar Technology for Fast Switching, Low RDS on • Higher Efficiency Extending Battery Life • This is a Pb−Free Device http://onsemi.com


    Original     		PDF NTS4409N SC-70/SOT-323 SC-70 NTS4409N/D NTS4409N NTS4409NT1G

    nts4001

    Abstract: No abstract text available
    Text: NTS4001N, NVS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVS4001N


    Original     		PDF NTS4001N, NVS4001N SC-70 AEC-Q101 SC-70/SOT-323 NTS4001N/D nts4001

    NTS4001N

    Abstract: NTS4001NT1 NTS4001NT1G
    Text: NTS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package is Available http://onsemi.com V BR DSS RDS(on) TYP


    Original     		PDF NTS4001N SC-70 SC-70/SOT-323 NTS4001N/D NTS4001N NTS4001NT1 NTS4001NT1G