VR 100K preset
Abstract: 100k variable resistor round body AD5204 NA 6884 A6D7 AD5206 SPI pin configuration 1K variable resistor AD5206 RW-24 BX 330 transistor
Text: 4-/6-Channel Digital Potentiometers AD5204/AD5206 FEATURES FUNCTIONAL BLOCK DIAGRAMS AD5204 CS CLK EN SDO DO A2 A1 A0 D7 W1 RDAC LATCH 1 ADDR DEC D0 The AD5204/AD5206 provide 4-/6-channel, 256-position digitally controlled variable resistor VR devices. These
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AD5204/AD5206
AD5204
AD5204/AD5206
256-position
AD5204/
AD5206
24-Lead
RW-24
RU-24
VR 100K preset
100k variable resistor round body
AD5204
NA 6884
A6D7
AD5206 SPI
pin configuration 1K variable resistor
RW-24
BX 330 transistor
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Untitled
Abstract: No abstract text available
Text: 4-/6-Channel Digital Potentiometers AD5204/AD5206 FUNCTIONAL BLOCK DIAGRAMS FEATURES AD5204 CS CLK EN SDO DO A2 A1 A0 D7 W1 RDAC LATCH 1 ADDR DEC D0 The AD5204/AD5206 provide 4-/6-channel, 256-position digitally controlled variable resistor VR devices. These
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AD5204/AD5206
AD5204
AD5204/AD5206
256-position
AD5204/
AD5206
24-Lead
RW-24
RU-24
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VR 100K preset
Abstract: NA 6884 100k variable resistor round body AD5204 AD5206 VR 10K preset AD5204BRZ50 MO-220-vhhd-2 pin configuration 1K variable resistor RW-24
Text: 4-/6-Channel Digital Potentiometers AD5204/AD5206 FEATURES FUNCTIONAL BLOCK DIAGRAMS AD5204 CS CLK EN SDO DO A2 A1 A0 D7 RDAC LATCH 1 D0 The AD5204/AD5206 provide 4-/6-channel, 256-position digitally controlled variable resistor VR devices. These devices perform the same electronic adjustment function as a
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AD5204/AD5206
AD5204
AD5204/AD5206
256-position
AD5204/
AD5206
24-Lead
RW-24
RU-24
VR 100K preset
NA 6884
100k variable resistor round body
AD5204
VR 10K preset
AD5204BRZ50
MO-220-vhhd-2
pin configuration 1K variable resistor
RW-24
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bd9883
Abstract: GH053A DTS-204 SE9189L SR50 Diode HC SR01 E105147 BA100 diode GT-209 equivalent SP8M3
Text: Specification GH053A A2 -060415 Version April 2006 Data Modul AG - www.data-modul.com NO DATE REVISION 1 2005.06.15 PAGE 6 Change the part: R10,11,14,15 : 150Ω →47Ω AP4532GM(APEC)→AP4509GM(APEC) Add the vendor AO4606(AOS) Remove the vendor SP8M3(ROHM)
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GH053A
AP4532GM
AP4509GM
AO4606
F1206FA3000V032T
F1206FA4000V032T
BA100
-BA100
RC1608J911
RC1608F911
bd9883
DTS-204
SE9189L
SR50 Diode
HC SR01
E105147
BA100 diode
GT-209
equivalent SP8M3
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DSO81204A
Abstract: E5052A R105 R106 R139 R64-R66 C3391
Text: LMK03200 Precision Clock Conditioner with Integrated VCO Evaluation Board Operating Instructions 6-16-2009 National Semiconductor Corporation Interface 2900 Semiconductor Dr. MS A2-600 Santa Clara, CA, 95052-8090 L M K 0 3 2 0 0 E V A L U A T I O N B O A R D
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LMK03200
A2-600
DSO81204A
E5052A
R105
R106
R139
R64-R66
C3391
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Untitled
Abstract: No abstract text available
Text: LMK03200 Precision Clock Conditioner with Integrated VCO Evaluation Board Operating Instructions 6-16-2009 National Semiconductor Corporation Interface 2900 Semiconductor Dr. MS A2-600 Santa Clara, CA, 95052-8090 L M K 0 3 2 0 0 E V A L U A T I O N B O A R D
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LMK03200
A2-600
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zener 751
Abstract: SMF12A-GS08 GSOT08C-GS08 SOD-923 zener GSOT36C-GS08 SMF33A-GS08 DO215AA 751-1397-1-ND 751-1415-1-ND SMF6V5A-GS08
Text: Transient Voltage Suppressors Cont. ESD TVS Fig. 1 SC-74 Dimensions in mm 1.55 6 5 4 1.70 1 2 3 6C A2 5A C3 4C 3 1 2 2.40 2.70 1 3 2 1 B. A. 2 1.35 2.20 Fig. 5 SOT-23 1.70 1 3 2 1.70 Breakdown Voltage VBR Min. Nom. Max. 5.32 6.0 6.4 6.2 13.3 13.3 5.32
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SC-74
OT-23
SC-89
OD-323
OT-323
SMAJ100A-E3/1GI-ND
A-E3/61GICT-ND
A-E3/61GITR-ND
SMAJ10A-E3/61GICT-ND
SMAJ10A-E3/61GITR-ND
zener 751
SMF12A-GS08
GSOT08C-GS08
SOD-923 zener
GSOT36C-GS08
SMF33A-GS08
DO215AA
751-1397-1-ND
751-1415-1-ND
SMF6V5A-GS08
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Z964
Abstract: Z961 4.20 mA Transmitter Z715 Z788 Z896 Z787.H.F Z715.F Z728.F Z960
Text: Zener barriers - Operating instructions How to select the correct barrier RS 280-6585 7. The following points have to be clarified if special field devices are used. • If the field device is a 4-20 mA transmitter: What load in Ohms can be connected to the transmitter so that it can attain 20 mA as before?
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Z787H
Z887H
Z964
Z961
4.20 mA Transmitter
Z715
Z788
Z896
Z787.H.F
Z715.F
Z728.F
Z960
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Z961
Abstract: Z728.H.F Z787H Z954 Z966.F Z964 Z896 Z715 Z779.F Z960
Text: Zener barriers - Operating instructions How to select the correct barrier 7. The following points have to be clarified if special field devices are used. • If the field device is a 4-20 mA transmitter: What load in Ohms can be connected to the transmitter so that it can attain 20 mA as before?
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zener 5.1 B2
Abstract: a3 6 zener c2 zener
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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1-Jan-2006
zener 5.1 B2
a3 6 zener
c2 zener
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Abstract: No abstract text available
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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1-Jun-2004
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Abstract: No abstract text available
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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1-Nov-2006
DO-35
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zener 3.3 b2
Abstract: Zener Diode C3 5 zener 5.1 B2 zener diode 2.7 b2 zener 2a1 zener diode 2.4 b2 2A2 zener diode c3 zener 4.7 B2 zener 5.6 B1 zener diode
Text: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175
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marking A3 Taiwan semiconductor
Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.
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REJ03G0043-0300Z
marking A3 Taiwan semiconductor
B2 Zener
Zener IT 243
REJ03G0043-0300Z
a3 6 zener
B1 5.6 zener
B2 marking code Zener
B1.66
A211-1
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top side marking b2
Abstract: PACDN2404C PACDN2404CG PACDN2408C PACDN2408CG PACDN2416C PACDN2416CG
Text: PACDN2404C/2408C/2416C ESD Protection Arrays, Chip Scale Package Features Product Description • The PACDN2404C, PACDN2408C and PACDN2416C are transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components that may be subjected to ESD. The backto-back Zener connections provide ESD protection in
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PACDN2404C/2408C/2416C
PACDN2404C,
PACDN2408C
PACDN2416C
MILSTD-883D
3015nd
178mm
top side marking b2
PACDN2404C
PACDN2404CG
PACDN2408CG
PACDN2416C
PACDN2416CG
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CM1206
Abstract: CM1206-04CS
Text: CM1206 ESD Protection Arrays, Chip Scale Package Features Product Description • The CM1206 family of transient voltage suppressor arrays provides a very high level of protection for sensitive electronic components that may be subjected to ESD. The back-to-back Zener connections provide
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CM1206
CM1206
PACDN2404C/08C/16C
CM1206-16
178mm
CM1206-04CS
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B2 Zener
Abstract: REJ03G0180-0300Z HZ2A1
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0180-0300Z Previous: ADE-208-117B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
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REJ03G0180-0300Z
ADE-208-117B)
DO-35
B2 Zener
REJ03G0180-0300Z
HZ2A1
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GRZZ0002ZB-A
Abstract: HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ11B
Text: HZ Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0180-0400 Rev.4.00 Jul 03, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.
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REJ03G0180-0400
DO-35
GRZZ0002ZB-A
GRZZ0002ZB-A
HZ11
HZ12
HZ15
HZ16
HZ18
HZ20
HZ22
HZ24
HZ11B
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et 1109
Abstract: 430 b3 top side marking b2 CM1206 DSA003020 l0610
Text: CM1206 ESD Protection Arrays, Chip Scale Package Features Product Description • The CM1206 family of transient voltage suppressor arrays provides a very high level of protection for sensitive electronic components that may be subjected to ESD. The back-to-back Zener connections provide
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CM1206
CM1206
MIL-STD-883D
CM1206-16
178mm
et 1109
430 b3
top side marking b2
DSA003020
l0610
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2408C
Abstract: PACDN2416C PACDN2416CG PACDN2404C PACDN2404CG PACDN2408C PACDN2408CG 2416C DN240
Text: PACDN2404C/2408C/2416C ESD Protection Arrays, Chip Scale Package Features Product Description • The PACDN2404C, PACDN2408C and PACDN2416C are transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components that may be subjected to ESD. The backto-back Zener connections provide ESD protection in
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PACDN2404C/2408C/2416C
PACDN2404C,
PACDN2408C
PACDN2416C
178mm
2408C
PACDN2416C
PACDN2416CG
PACDN2404C
PACDN2404CG
PACDN2408CG
2416C
DN240
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ZENER DIODE 1233
Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
Text: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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REJ03G0184-0400
GRZZ0002ZC-A
ZENER DIODE 1233
GRZZ0002ZC-A
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS22
HZS24
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Untitled
Abstract: No abstract text available
Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings AXIAL LEAD DO35 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value Units
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DO-35
DB-238
2013/B
DO-35
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Zener diode MARKING H5
Abstract: No abstract text available
Text: MCC H2 Series THRU H36 Series omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • 500 mW Zener Diode 1.9 to 37.2 Volts Low Leakage Low Zener Impedance
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HITACHI HZ
Abstract: zener diode 2.4 b2
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.
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ADE-208-117A
DO-35
HZ36-3.
HITACHI HZ
zener diode 2.4 b2
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