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    NXP Semiconductors IW611UK-A1CZ

    IC RF 140WLCSP
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    DigiKey IW611UK-A1CZ Reel 2,000
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    NXP Semiconductors IW612UK-A1CZ

    2.4/5 GHZ DUAL-BAND 1X1 WI-FI6 (
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    NXP Semiconductors IW416UK-A1CZ

    IC RF TXRX 802.15.4 76WLCSP
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    DigiKey IW416UK-A1CZ Reel 2,000
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    TE Connectivity PC4B0002-C-19A-1-CZ

    PC4B0002-C-19A-1-CZ
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    DigiKey PC4B0002-C-19A-1-CZ Bulk 25
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    Avnet Americas PC4B0002-C-19A-1-CZ Bulk 18 Weeks, 1 Days 25
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    Interstate Connecting Components PC4B0002-C-19A-1-CZ
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    Master Electronics PC4B0002-C-19A-1-CZ
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    NXP Semiconductors IW612UK/A1CZ

    DUAL-BAND1X1WI-FI6+BT5.2+802.15.4 - Tape and Reel (Alt: IW612UK/A1CZ)
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    Avnet Americas IW612UK/A1CZ Reel 16 Weeks 2,000
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    Mouser Electronics IW612UK/A1CZ
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    Newark IW612UK/A1CZ Bulk 2,000
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    A1CZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WD2797

    Abstract: WD2793 FD179X FD179X-02 FD1771 WD2791 179X WD2795 fd179x application WD179X
    Text: W ESTER N DÊCÈTAL C O R P O R A T I O N WD279X-02 Floppy Disk Formatter/Controller Family ENP tZ CS I • ON-CHIP WRITE PRECOMPENSATION LOGIC RÊEZ AO I • SINGLE +5V SUPPLY A1CZ DALO C Z DAL1 I DAL 2 I • ACCOMMODATES SINGLE AND DOUBLE DENSITY FORMATS


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    PDF WD279X-02 FD179X WD2797 WD2793 FD179X-02 FD1771 WD2791 179X WD2795 fd179x application WD179X

    li19

    Abstract: No abstract text available
    Text: £E> H A R R IS H S E M I C O N D U C T O R M 2K January 1992 - X 6 6 1 7 8 CMOS PROM Features Description • Low Power Standby and Operating Power - IC C S B . 100|iA The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8 bit/word


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    PDF HM-6617 90/120ns HM-66ITIONS HM-6617 li19

    Untitled

    Abstract: No abstract text available
    Text: HN58V65AI Series HN58V66AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759 Z Preliminary Rev. 0.0 Mar. 12, 1997 Description The Hitachi HN58V65AI series and HN58V66AI series are a electrically erasable and programmable


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    PDF HN58V65AI HN58V66AI 8192-word ADE-203-759 64-byte D-85622

    MSC 1691 AI

    Abstract: WD1771 WD1793 WD1691V western digital FD1791 WD1771-01 sj 8207 FD1770 WD1691 WG1 smd
    Text: 1984 Storage Managem ent Products Handbook Making The Leading Edge Work For You. This handbook is designed for you, the engineer. It’s intended to be a useful tool, enabling you to make a preliminary evaluation of our products and later, with samples in hand, design our products


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58V65AI Series HN58V66AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759 Z Preliminary, Rev. 0.0 Mar. 12,1997 Description The Hitachi HN58V65AI series and HN58V66AI series are a electrically erasable and programmable


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    PDF HN58V65AI HN58V66AI 8192-word ADE-203-759 64-byte FP-28D MO-059-AC

    MT4C16270DJ-7

    Abstract: No abstract text available
    Text: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical


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    PDF MT4C16270 256Kx 512-cycle 40-Pin MT4C1027Q MT4C16270DJ-7

    MC6800 architecture

    Abstract: MC6800 pin diagram MC6800 block diagram MC6800 addressing modes G65SC02 M6800 MC6800
    Text: G65SC02 CALIFORNIA MICRO DEVICES CM OS 8-BIT M ICROPROCESSOR Features Advanced memory access timing 04 on selected versions Uses single + 5 volt power supply Early address valid allows use with slower memories Early write data for dynamic memories 8-bit parallel processing


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    PDF G65SC02 65K-byte G65SC02 lA31bM0 0002H15 MC6800 architecture MC6800 pin diagram MC6800 block diagram MC6800 addressing modes M6800 MC6800

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG 64Kx 16-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 12/15/20/25ns • One Chip Select plus one Output Enable pin


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    PDF 16-BIT) 12/15/20/25ns 44-pin IDT71016 IDT71016 576-bit 200mV

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T016 is a 1,048,576-bit very low-power Static RAM organized as 64K x 16. It is fabricated using ID Ts highreliabilityCMOStechnology. Thisstate-of-the-arttechnology,


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    PDF 16-BIT) IDT71T016 IDT71T016 576-bit 200mV 71T016 400-mil

    87s185

    Abstract: MB7128 82HM185 RAYTHEON ROM MB712 Fujitsu proms
    Text: D IN ññüm 2 0 4 8 X 82H M 185 8 1 9 2 B IT 4 HM OS ROM FEATURES GENERAL DESCRIPTION • • • • • • • • • • The 82HM 185 is a high speed 8192 bit read-only memory (ROM) organized 2048 words by 4 bits. The device is fabricated using Intersil’s SELOX H M O S technology, a


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    PDF 82HM185 630mW 82HM185C) 82HM185 82HM185C 82HM185M 82HM185C: 82HM185M: 87s185 MB7128 RAYTHEON ROM MB712 Fujitsu proms

    Untitled

    Abstract: No abstract text available
    Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Preliminary Rev. 0.0 Dec. 5, 1996 Description The Hitachi HN58S65A series is a electrically erasable and programmable EEPROM’s organized as 8192-word x 8-bit employing advanced MNOS memory technology and


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    PDF HN58S65A 8192-word ADE-203-691 32-byte 44Tb203 G032bn