A1972 TRANSISTOR Search Results

A1972 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A1972 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor A1972 Abstract: A1972 A1972 IE 2SA1972 Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	PDF	2SA1972 transistor A1972 A1972 A1972 IE 2SA1972
transistor A1972 Abstract: a1972 2SA1972 a1972 Transistor Nortec 19 Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400	Original	PDF	2SA1972 transistor A1972 a1972 2SA1972 a1972 Transistor Nortec 19
transistor 2sa1972 Abstract: transistor A1972 A1972 Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400	Original	PDF	2SA1972 transistor 2sa1972 transistor A1972 A1972
a1972 Abstract: transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	PDF	2SA1972 a1972 transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor
a1972 Abstract: transistor A1972 2SA1972 A1972 IE Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	PDF	2SA1972 O-92MOD a1972 transistor A1972 2SA1972 A1972 IE
"Signal Line Filter" Abstract: electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972 Text: Freescale Semiconductor Application Note AN2764 Rev. 0, 06/2005 Improving the Transient Immunity Performance of Microcontroller-Based Applications by: Ross Carlton, Greg Racino, John Suchyta Freescale Semiconductor, Inc. Introduction Increased competition among appliance manufacturers, as well as market regulatory pressures, are	Original	PDF	AN2764 "Signal Line Filter" electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972