IEC320-C8
Abstract: No abstract text available
Text: Issue Date: 2009-08-13 Page 1 of 3 Report Reference # E302267-A19-UL-1 COVER PAGE FOR TEST REPORT Product Category: Product Category CCN: Test Procedure: Product: Model/Type Reference: Power Supplies, Medical and Dental QQHM2, QQHM8 Component Recognition AC-DC Adaptor
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E302267-A19-UL-1
IEC320-C14)
IEC320-C18)
IEC320-C8)
ENB1050
IEC320-C8
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A13 smd
Abstract: SMD a7 Transistor MT5C1001 a15 SMD
Text: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •
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MT5C1001
MIL-STD-883
32-Pin
28-Pin
MT5C1001DCJ-20L/883C
MT5C1001DCJ-20/883C
MT5C1001DCJ-25L/883C
MT5C1001DCJ-25/883C
MT5C1001DCJ-35L/883C
A13 smd
SMD a7 Transistor
MT5C1001
a15 SMD
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smd transistor a9
Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Text: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •
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MT5C1001
MIL-STD-883
32-Pin
28-Pin
MT5C1001DCJ-20L/883C
MT5C1001DCJ-20/883C
MT5C1001DCJ-25L/883C
MT5C1001DCJ-25/883C
MT5C1001DCJ-35L/883C
smd transistor a9
a15 SMD
A19 SMD
smd marking A5
10 35L
A16 SMD
SMD A18 Transistor
SMD a7 Transistor
smd diode a5
MT5C1001
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Untitled
Abstract: No abstract text available
Text: Issue Date: 2005-12-05 Amendment 1 2006-04-03 Page 1 of 2 Report Reference # E135803-A19-UL-1 COVER PAGE FOR TEST REPORT Product Category: Product Category CCN: Test Procedure: Product: Model/Type Reference: Rating s : Power Supplies for Information Technology Equipment Including Electrical
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E135803-A19-UL-1
GSM11-XYZ-XXXG,
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SMD MARKING A16
Abstract: No abstract text available
Text: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)
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MT5C1001
MIL-STD-883
28-Pin
32-Pin
memor83C
5962-9231608MZA
5962-9231604MZA
5962-9231607MZA
5962-9231603MZA
SMD MARKING A16
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ts06 94V0
Abstract: GDH04 ADE02 ADE03 ADE04 ADE06 ADE08 ADE09 ADE10 ADF02
Text: A GD Series - Page A3 AD Series - Page A7 S Series - Page A11 DPU Series - Page A12 TS Series - Page A16 MRD Series - Page A17 DRD Series - Page A19 DRS Series - Page A27 Need more technical information? Consult your Thomas & Betts sales office listed on the back cover
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ADE02
ADE03
ADE04
ADE05
ADE06
ADE07
ADE08
ADE09
ADE10
DRS43
ts06 94V0
GDH04
ADE02
ADE03
ADE04
ADE06
ADE08
ADE09
ADE10
ADF02
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ts06 94V0
Abstract: digital piano IC Augat Augat ADE02 10k resistor network SIP DRS-26 power resistor 0,25 ohms encapsulated rotary coded switch 16 positions DRS112 Augat mrd16s
Text: GD Series - Page A3 AD Series - Page A7 S Series - Page A11 DPU Series - Page A12 TS Series - Page A16 MRD Series - Page A17 DRD Series - Page A19 DRS Series - Page A27 Need more technical information? Consult your local Augat sales office AUGAT Inc. 452 John L. Dietsch Blvd.
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ADE02.
ADE03.
ADE04.
ADE05.
ADE06.
ADE07.
ADE08.
ADE09.
ADE10.
ADE12.
ts06 94V0
digital piano IC
Augat
Augat ADE02
10k resistor network SIP
DRS-26
power resistor 0,25 ohms encapsulated
rotary coded switch 16 positions
DRS112
Augat mrd16s
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NCL30082
Abstract: No abstract text available
Text: AND9131/D Designing a LED Driver with the NCL30080/81/82/83 www.onsemi.com Introduction As LED lighting finds its way into low wattage applications, lamp designers are challenged for a variety of conflicting requirements. Size is often dictated by the incumbent lamp and fixture size whether it’s A19, GU10,
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AND9131/D
NCL30080/81/82/83
NCL3008X
NCL30082
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A15NC
Abstract: A19 marking A18 marking
Text: SRAM FT5C1001 L 1M x 1 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY A. SPECIFICATIONS • Comm, Ind, Mil Temp • MIL-STD-883 M5004 non-compliant-B A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC 32-Pin SOJ
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FT5C1001
MIL-STD-883
M5004
28-Pin
32-Pin
-40oC
-55oC
125oC)
MT5C1001
A15NC
A19 marking
A18 marking
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a15 SMD
Abstract: No abstract text available
Text: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)
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MT5C1001
MIL-STD-883
28-Pin
32-Pin
memor83C
5962-9231608MZA
5962-9231604MZA
5962-9231607MZA
5962-9231603MZA
a15 SMD
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70pin ssop
Abstract: 64Mx32 D2732
Text: FEDR26V02G54N-02-01 OKI Semiconductor MR26V02G54N 64M–Word 32–Bit Page Mode Issue Date: Oct 19, 2006 P2ROM PIN CONFIGURATION TOP VIEW FEATURES Vcc 1 70 D28 Vss 2 69 D20 A24 3 68 D12 A23 4 67 D4 A22 5 66 D29 A21 6 65 D21 A20 7 64 D13 A19 8 63 D5 A18
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FEDR26V02G54N-02-01
MR26V02G54N
70pin ssop
64Mx32
D2732
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AM29DL164CB
Abstract: F0000H-F7FFFH F8000H-FFFFFH sa37 D8000H-DFFFFH B8000H-BFFFFH 10001XXX 00000H-07FFFH 030000H-03FFFFH 11000XXX
Text: SUPPLEMENT ADVANCE INFORMATION Am29DL164C Data Sheet Supplement This supplement is for use with the Am29DL162/ Am29DL163C data sheet, publication number 21533. This document contains information on ordering part numbers, device bank division, and sector configuration. For all other specifications, refer to the data sheet.
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Am29DL164C
Am29DL162/
Am29DL163C
x8/x16
Kbyte/32
Am29DL164CB
F0000H-F7FFFH
F8000H-FFFFFH
sa37
D8000H-DFFFFH
B8000H-BFFFFH
10001XXX
00000H-07FFFH
030000H-03FFFFH
11000XXX
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321181,
32M-BIT
PD44321181
152-word
18-bit
PD44321361
576-word
36-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321181,
32M-BIT
PD44321181
152-word
18-bit
PD44321361
576-word
36-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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AN 15525
Abstract: transistor marking A19 DIODE marking A19 A19 marking RF2317 PCBA
Text: RF2317 LINEAR CATV AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2317 is a general purpose, low-cost high-linearity
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RF2317
RF2317
50MHz
1000MHz,
AN 15525
transistor marking A19
DIODE marking A19
A19 marking
RF2317 PCBA
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48-PIN
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD23C16040BL, 23C16080BL 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C16040BL and µPD23C16080BL are 16,777,216 bits mask-programmable ROM. The word organization is
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PD23C16040BL,
23C16080BL
16M-BIT
16-BIT
PD23C16040BL
PD23C16080BL
48-pin
44-pin
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transistor marking A19
Abstract: A6 marking
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321181,
32M-BIT
PD44321181
152-word
18-bit
PD44321361
576-word
36-bit
transistor marking A19
A6 marking
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The μPD44321182 is a 2,097,152-word by 18-bit and the μPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
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PD44321182,
32M-BIT
PD44321182
152-word
18-bit
PD44321362
576-word
36-bit
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Untitled
Abstract: No abstract text available
Text: • A23SbOS 0035334 2 ■ SIEG Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E » ■ A23SbDS Q03flM33 M « S I E 6 B82412 EMI Suppression Chokes SIEMENS AKTIENGESELLSCHAF
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A23SbOS
A23SbDS
Q03flM33
B82412
023SbOS
G03fl43b
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Untitled
Abstract: No abstract text available
Text: COMPONENT RESEARCH CO I bSE D • 53G3111 □□□□71T fill A19 Component Research METALLIZED POLYPHENYLENE SULFIDE A 1 9 S P E C IF IC A T IO N S CONSTRUCTION M etallized polyphenylene su lfid e d ie le ctric, herm etically sealed, extended metal film
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53G3111
IL-C-83421.
100Hz,
A19B203
A19B223
A19B273
A19B333
A19B393
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Untitled
Abstract: No abstract text available
Text: • A23SbOS 0035334 2 ■ SIE G Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E D ■ ô235bD5 QG3Ô437 1 « S I E G B82422 EMI Suppression Chokes
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A23SbOS
235bD5
B82422
B-39-13
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