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    A150N50X4 Search Results

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    A150N50X4 Price and Stock

    TTM Technologies A150N50X4B

    RF ATTENUATOR 50OHM
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    DigiKey A150N50X4B Bag 1,000
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    Mouser Electronics A150N50X4B 790
    • 1 $4.36
    • 10 $3.94
    • 100 $2.94
    • 1000 $2.11
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    Richardson RFPD A150N50X4B 31 1
    • 1 $4.06
    • 10 $4.06
    • 100 $3.63
    • 1000 $2.18
    • 10000 $2.18
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    A150N50X4B 1,000
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    TTM Technologies A150N50X4C

    RF ATTENUATOR 50OHM
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    DigiKey A150N50X4C Bag
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    Richardson RFPD A150N50X4C 1
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    TTM Technologies A150N50X4E

    High Frequency/RF Resistors
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    Mouser Electronics A150N50X4E
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    Richardson RFPD A150N50X4E 1,000
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    • 1000 $1.95
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    A150N50X4 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A150N50X4B Anaren Chip Termination 150 Watts, 50W Original PDF
    A150N50X4C Anaren RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM Original PDF
    A150N50X4E Anaren RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM Original PDF

    A150N50X4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Model A150N50X4C Chip Termination 150 Watts, 50Ω Description The A150N50X4C is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination dissipates 150W and has a return loss of 25dB to


    Original     		A150N50X4C A150N50X4C A150N 50X4C PDF

    Power Combiners

    Abstract: A150N50X4B
    Text: Model A150N50X4B Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4B A150N50X4B Power Combiners PDF

    A150N50X4E

    Abstract: No abstract text available
    Text: Model A150N50X4E Chip Termination 150 Watts, 50Ω Description The A150N50X4E is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4E A150N50X4E MIL-E-5400. PDF

    Untitled

    Abstract: No abstract text available
    Text: Model A150N50X4C Chip Termination 150 Watts, 50Ω Description The A150N50X4C is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). It is well suited to all cellular frequency bands such as; AMPS,


    Original     		A150N50X4C A150N50X4C MIL-E-5400. A150N 50X4C PDF

    Untitled

    Abstract: No abstract text available
    Text: ROHS Compliant Model A150N50X4A Chip Termination 150 Watts, 50Ω Description The A150N50X4A is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4A A150N50X4A PDF

    Untitled

    Abstract: No abstract text available
    Text: Model A150N50X4C RoHS Compliant Chip Termination 150 Watts, 50Ω Description The A150N50X4C is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination dissipates 150W and has a return loss of 25dB to


    Original     		A150N50X4C A150N50X4C PDF

    Untitled

    Abstract: No abstract text available
    Text: Model A150N50X4E Chip Termination 150 Watts, 50Ω Description The A150N50X4E is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4E A150N50X4E MIL-E-5400d PDF

    A150N50X4B

    Abstract: No abstract text available
    Text: Model A150N50X4B Pb Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4B A150N50X4B A150N50X4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Model A150N50X4E Chip Termination 150 Watts, 50Ω Description The A150N50X4E is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4E A150N50X4E PDF

    A150N50X4B

    Abstract: No abstract text available
    Text: Model A150N50X4B Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4B A150N50X4B MIL-E-5400. PDF

    Untitled

    Abstract: No abstract text available
    Text: Model A150N50X4B Pb Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride AlN chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such


    Original     		A150N50X4B A150N50X4B A150N50X4 PDF

    2.4ghz lnb

    Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
    Text: Selection Matrix 3 dB Hybrid Couplers Model Number Package Size [Inch] Freq. Band [MHz] Ins. loss [dB max] Isolation [dB min] VSWR [max:1] ± Amp. Bal. [dB max] 90 ± Ph. Bal [deg. max] Avg. Power [W max] XC0450A-03 XC0450L-03


    Original     		XC0450A-03 XC0450L-03 XC0450E-03 1F1304-3 XC0900P-03 XC0900E-03 XC0900A-03 XC0900L-03 S03B888N3 XC1400P-03 2.4ghz lnb 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter PDF