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    on SIM 300 MODULE

    Abstract: No abstract text available
    Text: D S 1 5 4 5 Y /A B DALLAS SEMICONDUCTOR Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power DS1645Y/AB NC | A16 1 1 A7 • Write protects selected blocks of m em ory w hen pro­ grammed


    OCR Scan     		PDF DS1645Y) DS1645AB) 64SY/AB 34-PIN on SIM 300 MODULE

    645Y

    Abstract: No abstract text available
    Text: DS 1645Y/A B DALLAS SEMICONDUCTOR FEATURES • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 128K x 8 volatile static RAM • W rite protects selected blocks of m em ory when pro­


    OCR Scan     		PDF 1645Y/A DS1645Y) DS1645AB) 645Y/AB DS1645Y/AB 34-PIN 645Y

    a17 ct he nv

    Abstract: No abstract text available
    Text: DS1550Y/AB DALLAS SEMICONDUCTOR Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • Data is autom atically protected during power loss • Directly replaces 512K x 8 volatile static RAM • W rite protects selected blocks of m em ory when pro­ grammed


    OCR Scan     		PDF DS1550Y/AB DS1650Y) DS1650AB) 34-PIN a17 ct he nv

    smd A7t

    Abstract: smd code A7t
    Text: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2


    OCR Scan     		PDF WE512K8, WE256K8, WE128K8-XCX 512Kx8 WE512K8-XCX, 150nS, 200nS, 250nS, 300nS smd A7t smd code A7t

    60395 xicor

    Abstract: QML-38535 5962-3826705MXA AT28C010 5962-38267 5962-3826703MXA 5962-3826703 5962-3826701 CQCC1-N44
    Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED A Add packages T and W. Add vendor CAGE 60395 as source of supply. Increase data retention to 20 years, minimum. Redrawn with changes. 93-06-29 M. A. Frye B Changes in accordance with NOR 5962-R139-94. 94-03-29


    OCR Scan     		PDF 5962-R139-94. 5962-R278-94. 5962-R163-96. 0EU86 1FN41 60395 xicor QML-38535 5962-3826705MXA AT28C010 5962-38267 5962-3826703MXA 5962-3826703 5962-3826701 CQCC1-N44

    IMS1600P45

    Abstract: 4800Q 1601L
    Text: IM S 1 6 0 0 IM S 1 6 0 1 L CMOS High Performance 64K x 1 Static RAM OGHmOS FEATURES • • • • • • • • • • • • • D E S C R IPTIO N IN M O S 'V e ry High Speed C M OS A d vanced P rocess - 1 .6 Micron Design Rules 6 4 K x 1 Bit O rganization


    OCR Scan     		PDF 300-m S1600 IMS1600/1601L IMS1600P45 4800Q 1601L

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78P018F is a mem ber of the ¿¡PD78018F Subseries w ithin the 78K/0 Series. The internal m ask ROM of the ¿¡PD78018F is replaced with one-tim e PROM or EPROM. Because the ¿¡PD78P018F can be program m ed by users, it is suited for applications involving the evaluation of


    OCR Scan     		PDF PD78P018F PD78018F 78K/0 PD78P018FDW 78P018FK 10943X 10535E C10535J

    Untitled

    Abstract: No abstract text available
    Text: Features * Read Access Time -12 0 ns * Word-wide or Byte-wide Configurable * Dual Voltage Range Operation - Unregulated Battery Power Supply Range, 2.7V to 3.6V or Standard 5V ±1 0% Supply Range * 8-Megabit Flash and Mask ROM Compatible Pinouts * Low Power CMOS Operation


    OCR Scan     		PDF 44-Lead 48-Lead 0988C 10/98/x

    it27

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ /¿PD29F008AL-X 8M-BIT CMOS LOW-VOLTAGE FLASH MEMORY 1M-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD29F008AL-X is a low-voltage 2.2 to 2.7 V, 2.7 to 3.6 V flash memory configured as 8,388,608 bits


    OCR Scan     		PDF PD29F008AL-X uPD29F008AL-X 40-pin 64tation it27

    OA741

    Abstract: 430VX D175B OTI-068 82438VX OTI077 Intel 82437 m026 TI07 82437VX
    Text: PRELIMINARY INTEL 430VX PCISET 82437VX SYSTEM CONTROLLER TVX AND 82438VX DATA PATH UNIT (TDX) Supports All 3V Pentium Processors - Back-to-Back Read/Write Cycles at 3-1-1-1-1-1-1-1 - Supports Write-Back PCI 2.1 Compliant Integrated DRAM Controller - 64-Bit Path to Memory


    OCR Scan     		PDF 430VX 82437VX 82438VX 64-Bit 256-KB 512-KB 0F20h, 4fl2bl75 OA741 D175B OTI-068 OTI077 Intel 82437 m026 TI07

    Untitled

    Abstract: No abstract text available
    Text: AT27LV1024 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 V to 5.5 V Fast Read Access T im e -120 ns Compatible with JEDEC Standard AT27C1024 Low Power 3.3-Volt CMOS Operation 20 iA max. Standby 36 mW max. Active at 5 MHz for Vcc = 3.6 V


    OCR Scan     		PDF AT27LV1024 AT27C1024 40-Lead 600-mil 44-Pad V1024-25DC AT27LV1024-25JC AT27LV1024-25LC AT27LV1024-25PC

    Untitled

    Abstract: No abstract text available
    Text: bq4015/bq4015Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >• D a ta retention in the absen ce of power T h e CM O S bq4015 is a nonvolatile 4,194,304-bit sta tic RAM organ ized a s 524,288 w ords by 8 bits. T h e in te ­ g r a l con trol c irc u itry a n d lith iu m


    OCR Scan     		PDF 32-pin 10-year bq4015/bq4015Y 512Kx8 bq4015 304-bit

    sj 83100

    Abstract: 9437184-BIT
    Text: MITSUBISHI LS Is SRAM MODULE STATIC RAM 9 1M X 9 9 M. BIT Max. Access Typ e name Load m em ory tim e O utw ard dim ensions W X H X D (m m ) Data sheet page (ns) MH1M09SSP-25 25 MH1M09SSP-35 35 MH1M09SSP-45 ★★ M5M 51001 X 9 28.8 X 2 7 X 1 2.06 3/8 45


    OCR Scan     		PDF MH1M09SSP-25 MH1M09SSP-35 MH1M09SSP-45 M09SSP-25 9437184-BIT 1048576-WORD MH1M09SSP sj 83100 9437184-BIT

    0801b

    Abstract: No abstract text available
    Text: Features * * * * * * * * * * * Read Access Tim e - 90 ns Word-wide or Byte-wide Configurable 8-M egabit Flash and Mask ROM Compatable Low Power CMOS Operation - 100 |jA Maximum Standby - 50 mA Maximum Active at 5 MHz W ide Selection of JEDEC Standard Packages


    OCR Scan     		PDF 42-Lead 44-Lead 48-Lead 1024K AT27C800 0801B 10/98/xM

    ic ap 2068

    Abstract: AP 1668 7C51 S019C-SEPTEM
    Text: SMJ27C512 524288- BI T UV E R A S A B L E P R O G R A M M A B L E RE A D - O N L Y M E M O R Y S G M S019C-SEPTEM BER 1987 - REVISED AUGUST 1995 . . . 64K x 8 • Or ga n i za t i o n • Hi gh- R l iabil ity M I L - S T D - 8 8 3 C l a s s B Processing •


    OCR Scan     		PDF SMJ27C512 S019C-SEPTEM 27C51 ic ap 2068 AP 1668 7C51

    Untitled

    Abstract: No abstract text available
    Text: . IM S 1 6 0 0 IM S 1 6 0 1 L : cmos •■■" D D H riO S8 High Performance 64K x 1 Static RAM FEATURES • • • • • • • • • • • • • DESCRIPTION The IN M O S IM S 1600 is a high perform ance 64K * 1 C M O S S tatic RAM. The IM S1600 provides m axim um


    OCR Scan     		PDF 22-Pin, 300-m 22-Pin 24-Pin, S1600 IMS1600/1601L

    IMS1600P-55

    Abstract: 1601L 1601 resistor pack IMS1600 IMS1601LM 508BH IMS1600E-25 IMS1600P-45 ims-1600p-55 IMS1600S45
    Text: m o IM S 1 6 0 0 IM S 1 6 0 1 L CMOS High Performance 64K x 1 Static RAM s FEATURES DESCRIPTION IN M O S ' Very H igh Speed C M OS A dvanced Prooess - 1.6 M icron Design Rules 6 4 K x 1 B it O rganization 25, 30, 35, 45 and 55 n sec Access Tim es Fully TTL C om patible


    OCR Scan     		PDF IMS1600 IMS1601L 22-Pin, 300-mil 22-Pin 24-Pin, IMS1600/1601L IMS1600P-55 1601L 1601 resistor pack IMS1601LM 508BH IMS1600E-25 IMS1600P-45 ims-1600p-55 IMS1600S45

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ,uPD 78P018FYis a mem ber of the ¿¡PD78018FY Subseries of 78K/0 Series products. The internal m ask ROM of the ¿¡PD78018FY is replaced with one-tim e PROM or EPROM. Because the ¿¡PD78P018FYcan be program m ed by users, it is ideally suited for applications involving the evaluation


    OCR Scan     		PDF 78P018FYis PD78018FY 78K/0 PD78P018FYcan PD78P018FYDW 018FY 13388E C10535J 10535E

    fia P124

    Abstract: U12326E 78K D78P0 uPD78056F uPD780208 78058FY uPD78P058 uPD78P058F U12326E uPD78058F
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78P058F is an Electro Magnetic Interference EMI noise reduction version of the ¿¡PD78P058. The ¿¡PD78P058F is a m em ber of the ¿¡PD78058F Subseries of the 78K/0 Series, in which the on-chip m ask ROM


    OCR Scan     		PDF uPD78P058F uPD78P058 uPD78058F 78K/0 PD78058F PD78058F, 78058FY fia P124 U12326E 78K D78P0 uPD78056F uPD780208 U12326E

    Untitled

    Abstract: No abstract text available
    Text: P R E LIM IN A R Y DATA S H EE T AIPD29F160L MOS INTEGRATED CIRCUIT 16M-BIT CMOS LOW-VOLT AGE FLASH MEMORY 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT (WORD MODE) Description The ^¡PD29F160L is a low-voltage (2.2 to 2.7 V, 2.7 to 3.6 V) flash memory organized as 16,777,216 bits in 35


    OCR Scan     		PDF uPD29F160L 16M-BIT 16-BIT PD29F160L 48-pin 14112EJ1V0D

    Untitled

    Abstract: No abstract text available
    Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel


    OCR Scan     		PDF 28F016SA 28F008SA 56-Lead, 28F016SA 28F032SA

    Untitled

    Abstract: No abstract text available
    Text: TMS29F040 4194304-BIT FLASH MEMORY SMJS820A - APRIL 1996 - REVISED JANUARY 1997 PM PACKAGE TOP VIE W S i ngl e P o w e r S up p l y 5 V ±10% 3.3 V ± 0 . 3 V - See ’2 9 L F 0 4 0 / ’2 9 V F 0 4 0 Data S he e t cm i n co oo O N. < < < < > I5 < 2.7 V to 3.6 V - S e e ’2 9 L F 0 4 0 / ’2 9 V F0 4 0


    OCR Scan     		PDF TMS29F040 4194304-BIT SMJS820A

    Untitled

    Abstract: No abstract text available
    Text: Features üimËL • Fast Interleave Cycle Time - 35 ns • Continuous Memory Interleaving - Unlimited Linear Access Data Output * Dual Voltage Range Operation - Low-Voltage Power Supply Range, 3.0V to 3.6V or Standard 5V ± 1 0 % Supply Range * Low-power CMOS Operation


    OCR Scan     		PDF 44-lead 40-lead

    BU 102S

    Abstract: No abstract text available
    Text: MITSUBISHI M EM OR Y CARD F LA S H M E M O R Y CAR DS MF8 2 5 7-G C D A T X X 8/16-bit Data Bus MF8 5 13-G C D A T X X Flash M e m o ry C ard MF81M1-GCDATXX MF82M1-GCDATXX C o n n e c to r T y p e Two-piece 68-pin ~7 Z I i P r o g ra m /e ra s e o p e ra tio n b y s o ftw a re c o m m a n d


    OCR Scan     		PDF 8/16-bit MF81M1-GCDATXX MF82M1-GCDATXX 68-pin clfl25 BU 102S