A14702EE3V0PL00 Search Results

ARM946

Abstract: A14702EE3V0PL00 CB12 nec asic product letter
Text: CB-12 0.15 µm Features >> 0.15 µm drawn, 0.11 µm effective Cobalt Salicide CMOS process >> Three transistor characteristics (low power, standard, high performance) selectable on the same chip >> Up to 8 metal layers CB-12 Cell-based CMOS IC Featuring the selection of three different transistor characteristics on the same chip for achieving