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    A1431 TRANSISTOR Search Results

    A1431 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A1431 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor A1431

    Abstract: a1431 transistor A1431 2SA1431 transistor A1431 datasheets 2-7D101A
    Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		2SA1431 Transistor A1431 a1431 transistor A1431 2SA1431 transistor A1431 datasheets 2-7D101A PDF

    Transistor A1431

    Abstract: a1431 transistor
    Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		2SA1431 Transistor A1431 a1431 transistor PDF

    Transistor A1431

    Abstract: a1431 a1431 transistor 2-7D101A 2SA1431 A-1431
    Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		2SA1431 Transistor A1431 a1431 a1431 transistor 2-7D101A 2SA1431 A-1431 PDF