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    A140A Search Results

    A140A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPA140AIDGKT Texas Instruments 11MHz, Single Supply, Low Noise, Precision, Rail-to-Rail Output, JFET Amplifier 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    OPA140ATDD1 Texas Instruments High-Precision, Low-Noise, Rail-to-Rail Output, 11MHz JFET Op Amp 0- Visit Texas Instruments
    OPA140AIDR Texas Instruments 11MHz, Single Supply, Low Noise, Precision, Rail-to-Rail Output, JFET Amplifier 8-SOIC -40 to 125 Visit Texas Instruments Buy
    OPA140AATDB2 Texas Instruments High-Precision, Low-Noise, Rail-to-Rail Output, 11MHz JFET Op Amp 0- Visit Texas Instruments
    OPA140AIDGKR Texas Instruments 11MHz, Single Supply, Low Noise, Precision, Rail-to-Rail Output, JFET Amplifier 8-VSSOP -40 to 125 Visit Texas Instruments Buy
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    A140A Price and Stock

    Texas Instruments OPA140AIDBVR

    IC OPAMP JFET 1 CIRCUIT SOT23-5
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    DigiKey OPA140AIDBVR Digi-Reel 6,930 1
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    OPA140AIDBVR Reel 6,000 3,000
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    Mouser Electronics OPA140AIDBVR 9,625
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    Newark OPA140AIDBVR Cut Tape 1
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    Bristol Electronics OPA140AIDBVR 95
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    OPA140AIDBVR 11 2
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    NexGen Digital OPA140AIDBVR 1
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    Chip 1 Exchange OPA140AIDBVR 268
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    New Advantage Corporation OPA140AIDBVR 42 1
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    Win Source Electronics OPA140AIDBVR 7,405
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    PanJit Group SBA140AS_R1_00001

    DIODE SCHOTTKY 40V 1A SOD123
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    DigiKey SBA140AS_R1_00001 Digi-Reel 5,726 1
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    SBA140AS_R1_00001 Cut Tape 5,726 1
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    SBA140AS_R1_00001 Reel 3,000 3,000
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    Chip One Stop SBA140AS_R1_00001 Cut Tape 3,000
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    Texas Instruments OPA140AIDR

    IC OPAMP JFET 1 CIRCUIT 8SOIC
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    DigiKey OPA140AIDR Reel 2,500 2,500
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    Mouser Electronics OPA140AIDR 5,681
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    TME OPA140AIDR 195 1
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    Ameya Holding Limited OPA140AIDR 455
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    Chip One Stop OPA140AIDR Cut Tape 2,379
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    Win Source Electronics OPA140AIDR 11,840
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    Texas Instruments OPA140AIDGKR

    IC OPAMP JFET 1 CIRCUIT 8VSSOP
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    DigiKey OPA140AIDGKR Reel 2,500 2,500
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    Mouser Electronics OPA140AIDGKR 4,964
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    Newark OPA140AIDGKR Cut Tape 1
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    Bristol Electronics OPA140AIDGKR 1,157
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    Win Source Electronics OPA140AIDGKR 10,000
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    Texas Instruments OPA140AID

    IC OPAMP JFET 1 CIRCUIT 8SOIC
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    DigiKey OPA140AID Tube 1,457 1
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    Mouser Electronics OPA140AID 6,140
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    Bristol Electronics OPA140AID 1,503
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    OPA140AID 24
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    TME OPA140AID 208 1
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    Chip One Stop OPA140AID Tube 46
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    Chip Stock OPA140AID 2,500
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    Win Source Electronics OPA140AID 12,500
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    A140A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TB 1226 BN

    Abstract: TB GUA 5365 MATERIAL TB GUA 5365 MATERIAL NEOPRENE E-23018 tb 1229 bn sj 2258 emp 5523 ASTM A123 galvanized iron thermal conductivity UL514
    Text: 412031.A01 FIT 3/12 3/20/03 3:02 PM Page 1 A Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A2 Tables and Specifications . . . . . . . . . . . . . . . . . . . . . . A3 Rigid Metal Conduit/Intermediate Metal Conduit Fittings . . . . . . . . . . . . . . . . . . . A4-A38


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    A4-A38 A39-A40 A41-A49 A50-A51 A52-A53 A54-A56 A57-A65 TB 1226 BN TB GUA 5365 MATERIAL TB GUA 5365 MATERIAL NEOPRENE E-23018 tb 1229 bn sj 2258 emp 5523 ASTM A123 galvanized iron thermal conductivity UL514 PDF

    A17a

    Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
    Text: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time


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    2002/95/EC A17a diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking PDF

    Quartz Crystal Oscillators 3.57MHz

    Abstract: crystal 3.579545MHZ hc49 hc49 12 Mhz Specification Quartz Crystals 3.57Mhz 5th overtone 120MHz crystal oscillator design l108d T807 Specification Quartz Crystals 1Mhz Crystal Oscillators 3.57MHz HC49 4.608MHZ
    Text: QUARTZ CRYSTALS - Section Contents Specifying Quartz Crystals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Stock Quartz Crystals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    768kHz Quartz Crystal Oscillators 3.57MHz crystal 3.579545MHZ hc49 hc49 12 Mhz Specification Quartz Crystals 3.57Mhz 5th overtone 120MHz crystal oscillator design l108d T807 Specification Quartz Crystals 1Mhz Crystal Oscillators 3.57MHz HC49 4.608MHZ PDF

    CD 5888 CB SMD IC

    Abstract: A103j resistor network a103j RESISTOR smd diode S4 67A a103j network resistor a103j equivalent des circuit integre ttl C-MAc quartz a103g cepe ocxo
    Text: New Products. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv SAWs Profile of C-MAC Frequency Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii


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    PDF

    powerflex 753 programming manual

    Abstract: 22A D4P0N104 Powerflex User Manual rockwell powerflex 753 wiring diagram Allen-Bradley 22A-D2P3N104 22A-D4P0N104 22-RF012-BL 22B-D2P3N104 22B-D4P0N104 22A-D1P4N104 22A-D6P0N104
    Text: Technical Data PowerFlex 4-Class of AC Drives - PowerFlex™ 4 - PowerFlex™ 40 PowerFlex™ 4-Class AC Drives Technical Data Providing users with powerful motor speed control in a compact, space saving design, the Allen-Bradley PowerFlex 4-Class AC drives are the


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    D-74834 22-TD001A-EN-P powerflex 753 programming manual 22A D4P0N104 Powerflex User Manual rockwell powerflex 753 wiring diagram Allen-Bradley 22A-D2P3N104 22A-D4P0N104 22-RF012-BL 22B-D2P3N104 22B-D4P0N104 22A-D1P4N104 22A-D6P0N104 PDF

    XTAL003156

    Abstract: C-MAC A103A xtal002997 xtal003336 L108K M153D crystal 3.579545MHZ hc49 insl000002 c-mac crystals a103a XTAL003074
    Text: SPECIFYING QUARTZ CRYSTALS A typical quartz crystal specification reads like this: 20.0MHz HC49 15 30 20 30 Fund Frequency Tolerance BU T Frequency Holder Style Frequency Stability Where high initial accuracy is important the additional manufacturing cost should be weighed against the cost of


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    57920MHz XTAL003407 A315A 20/50/10/SR XTAL003320 A189A 000140MHz XTAL003360 A210A 5760MHz XTAL003156 C-MAC A103A xtal002997 xtal003336 L108K M153D crystal 3.579545MHZ hc49 insl000002 c-mac crystals a103a XTAL003074 PDF

    rockwell powerflex 753 wiring diagram

    Abstract: 22A D4P0N104 Powerflex User Manual Allen-Bradley 22A-D2P3N104 powerflex 753 programming manual 140M-C2E-C16 powerflex 4 22B-D010N104 22B-D024N104 22-RJ45CBL-C20 22A-A3P6N103
    Text: PowerFlex 4 and 40 Technical Data ADJUSTABLE FREQUENCY AC DRIVES PowerFlex 4 and 40 Technical Data Product Overview Providing users with powerful motor speed control in a compact, space saving design, the Allen-Bradley® PowerFlex® 4 and 40 AC drives are the smallest


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    22-TD001G-EN-P 22-TD001F-EN-P rockwell powerflex 753 wiring diagram 22A D4P0N104 Powerflex User Manual Allen-Bradley 22A-D2P3N104 powerflex 753 programming manual 140M-C2E-C16 powerflex 4 22B-D010N104 22B-D024N104 22-RJ45CBL-C20 22A-A3P6N103 PDF

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


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    element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186 PDF

    bft10

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


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    TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0 bft10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


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    TC55V1001 F/FT/TR/ST/SR-85 072-WORD TC55V1001F/FT/TR/ST/SR 576-bit 775TYP 32-P-0820-0 PDF

    TC551001

    Abstract: TC554001
    Text: T O S H IB A TC554001 FI/FTI-85#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FI/FTI is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FI/FTI-85 TC554001FI/FTI 304-bit 10mA/MHz Fl/FTl-85 OP32-P-525-1 TC551001 PDF

    A118C

    Abstract: A147D L102K A109C A150B A166K A175H A147H A166A A129A
    Text: SPECIFYING QUARTZ CRYSTALS Frequency Tolerance A typical quartz crystal specification reads like this: The cost of manufacture depends partly on the accuracy required at the reference temperature which in the case of the AT-cut crystal, is usually 25°C .


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    48MHz 11840MHz 5792MHz 00014MHz 5760MHz 25120MHz 320MHz 20/50/10/SR 20/30/10/SR 30/50/10/SR A118C A147D L102K A109C A150B A166K A175H A147H A166A A129A PDF

    D23C8000

    Abstract: X5060 D23c8
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD23C8000L 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The /xPD23C8000L is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode:


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    uPD23C8000L 512K-WORD 16-BIT /xPD23C8000L 42-pin 44-pin 48-pin D23C8000 X5060 D23c8 PDF

    toshiba tc551001BPL

    Abstract: TC551001 tc551001bpl
    Text: T O S H IB A TC551001 BPI_/BFI_/BFTL/BTRI_/BSTL/BSRL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM


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    TC551001BPL/BFL/B iyBTRL/BSTL/BSRL-70L 072-WORD TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL 576-bit 32-P-0 toshiba tc551001BPL TC551001 tc551001bpl PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-136E Z HM62Y256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI Features • Low voltage operation SRAM Operating Supply Voltage: 2.7 V to 3.6 V • 0.8 nm Hi-CMOS process • High speed Access time: 70/85/100 ns (max) • Low power


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    ADE-203-136E 768-word HM62Y256 28-pin FP-28DA) 32-pin TFP-32DA) TFP-28DA) HM62V256LFP-10T PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


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    TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85 072-WORD TC55V1001AFI/AFTI/ATRI/ASTI/ASRI 576-bit 32-P-0820-0 PDF

    TC554001

    Abstract: No abstract text available
    Text: TOSHIBA TC554001 FL/FTL-70V#-8 5 V #-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FL/FTL-70V TC554001FL/FTL 304-bit 10mA/MHz 70jis OP32-P-525-1 PDF

    TC554001

    Abstract: No abstract text available
    Text: TOSHIBA TC554001 FL/FTL-70L#-85L#-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FL/FTL-70L TC554001FL/FTL 304-bit 10mA/MHz 70jis OP32-P-525-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC55V1001 FI/FTI/TRI/STI/SRI-85L,-10L TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001FI/FTI/TRI/STI/SRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device


    OCR Scan
    TC55V1001 FI/FTI/TRI/STI/SRI-85L 072-WORD TC55V1001FI/FTI/TRI/STI/SRI 576-bit 32-P-0820-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


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    TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70V 072-WORD TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL 576-bit 32-P-0820-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


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    072-WORD TC55V1001 F/FT/TR/ST/SR-85 TC55V1001F/FT/TR/ST/SR 576-bit 32-P-0820-0 32-P-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM


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    TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI-70 TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI 576-bit 32-P-0820-0 32-P-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0 O P IEK Product Bulletin A140A April 1993 Four Channel Low Input Current Optocoupler Type A140A Functions Absolute Maximum Ratings T a = 2 5 °C u n le s s o th e rw is e n o te d • Operating T e m p e ra tu re . -55°C t o +150°C


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    HDA140A HDA140A 680kn, 50Vp-p, 0002E37 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT UPD23C24000 24M-BIT MASK-PROGRAMMABLE ROM 3M-WORD BY 8-BIT BYTE MODE 1.5M-WORD BY 16-BIT(WORD MODE) Description T he /¿PD 23C 24000 is a 2 5 ,1 6 5 ,8 2 4 bits m a sk-p ro g ra m m a b le ROM. The w o rd org a n iza tio n is se lectab le (BYTE


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    UPD23C24000 24M-BIT 16-BIT PDF