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    A13B 5 PIN Search Results

    A13B 5 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    A13B 5 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DQ25A

    Abstract: DQ20A DQ18A
    Text: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green


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    SG578288FG8SZUU SG578288FG8SZDG 128Mx78 244-pin 128Mx39 512MB 64Mx8 DDR2-533-444, PC2-4200 SG578288FG8SZIL DQ25A DQ20A DQ18A PDF

    a13b 5 pin

    Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
    Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next


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    IDTAMB0480 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH a13b 5 pin A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES DESCRIPTION: FEATURES: Advanced Memory Buffer for Fully buffered DIMMs 3.2 and 4 Gbit/s serial speeds DDR2-533 and 667 DRAM


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    IDTAMB0480 DDR2-533 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH PDF

    A13B

    Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
    Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits


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    AS9C25512M2018L 19-bit A13B DQ17A-DQ0A A14B DQ4a DQ11A PDF

    transistor std A13B

    Abstract: A13B fast diode ifm if 40 A transil IEC1000-4-2 S020 SO20 SSOP20 SSOP20 300 mil
    Text: ESDR6V1-27FUx  Application Specific Discretes A.S.D.TM ESD PROTECTION MONOLITHIC 9-BIT WIDE TRANSILTM ARRAY MAIN APPLICATIONS Where high level protection in ESD sensitive equipment is required, such as : - Computers - Printers - Business machines - Communication systems


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    ESDR6V1-27FUx ESDR6V1-27FUx ThelayoutoftheESDR6V1-27FUxdeviceallows transistor std A13B A13B fast diode ifm if 40 A transil IEC1000-4-2 S020 SO20 SSOP20 SSOP20 300 mil PDF

    SSOP20 300 mil Footprint

    Abstract: 74HC04 IEC1000-4-2 SSOP20
    Text: EMIF09-02726Sx  Application Specific Discretes A.S.D.TM EMI FILTER INCLUDING ESD PROTECTION MAIN APPLICATIONS Where EMI filtering in ESD sensitive equipment is required : Computers and printers Communication systems Mobile phones MCU Boards SO-20 DESCRIPTION


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    EMIF09-02726Sx SO-20 EMIF09-02726sx SSOP20 SSOP20 300 mil Footprint 74HC04 IEC1000-4-2 SSOP20 PDF

    DQ20A

    Abstract: A17a DQ18A be2a A13B
    Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits


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    AS9C25256M2036L 18Gbps 18-bit DQ20A A17a DQ18A be2a A13B PDF

    A13B

    Abstract: MARKING CODE DALC BV99 a13 marking sot23 74HC04 DALC208SC6 SC74 0118E a13b 5 pin PIN diode Pspice model
    Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : n Sensitive logic input protection n Microprocessor based equipment n Audio / Video inputs


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    DALC208SC6 OT23-6L DALC208SC6 DALC208SChts A13B MARKING CODE DALC BV99 a13 marking sot23 74HC04 SC74 0118E a13b 5 pin PIN diode Pspice model PDF

    A13B

    Abstract: FigA12 a13b 5 pin sot23/smd DALC a13 marking sot23 marking dalc 74HC04 DALC208SC6 SC74 DALC SOT23-6
    Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs Portable electronics


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    DALC208SC6 OT23-6L DALC208SC6 A13B FigA12 a13b 5 pin sot23/smd DALC a13 marking sot23 marking dalc 74HC04 SC74 DALC SOT23-6 PDF

    A13B

    Abstract: DALC208SC6 DALC206SC6 a13b 5 pin a13 marking sot23 marking dalc IEC1000-4-2 SC74 74HC04 diode MARKING CODE A9
    Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs


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    DALC208SC6 OT23-6L DALC208SC6 A13B DALC206SC6 a13b 5 pin a13 marking sot23 marking dalc IEC1000-4-2 SC74 74HC04 diode MARKING CODE A9 PDF

    A17a

    Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
    Text: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]


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    AS9C25512M2018L AS9C25256M2018L 512/256K A17a a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A PDF

    A17A

    Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
    Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]


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    AS9C25256M2036L AS9C25128M2036L 256/128K 18Gbps A17A A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b PDF

    A12B

    Abstract: A14B a17b DS1280 A10B A11B A13B DS1280FP-80
    Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for


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    DS1280 68-pin 80-pin DS1280FP-XX 44-pin A12B A14B a17b DS1280 A10B A11B A13B DS1280FP-80 PDF

    dallas ds1280

    Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
    Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for


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    DS1280 68-pin 80-pin DS1280FP-XX 44-pin dallas ds1280 A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80 PDF

    HMP31GF7AFR4C

    Abstract: SN10 SN13 1x2 demux
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 2Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


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    240pin 1240pin 1Gbx72, HMP31GF7AFR4C HMP31GF7AFR4C SN10 SN13 1x2 demux PDF

    SN10

    Abstract: SN13 "Raw Card J" DDR DIMM 512m non-ecc SPD
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that isolates the DDR2


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    240pin 1240pin SN10 SN13 "Raw Card J" DDR DIMM 512m non-ecc SPD PDF

    HYMP351F72AMP4D2-C4

    Abstract: A13A dram card 60 SN10 SN13 hymp351f72amp4d2 DDR DIMM 512m non-ecc SPD DDR2 DIMM
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


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    240pin 1240pin 512Mx72, HYMP351F72AMP4 HYMP351F72AMP4D2-C4 A13A dram card 60 SN10 SN13 hymp351f72amp4d2 DDR DIMM 512m non-ecc SPD DDR2 DIMM PDF

    NEC A15A

    Abstract: dram card 60 SN13
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


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    240pin 1240pin 512Mx72, HYMP351F72AMP4 NEC A15A dram card 60 SN13 PDF

    Untitled

    Abstract: No abstract text available
    Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that


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    240pin 1240pin 512Mx72, HMP151F7EFR4C PDF

    2SA1386

    Abstract: 2SA1386A
    Text: AOK AOK Semiconductor Product Specification 2SA1386 2SA1386A Silicon PNP P o w er Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to


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    2SA1386 2SA1386A 2SC3519/3519A 2SA1386A PDF

    Untitled

    Abstract: No abstract text available
    Text: ^77. DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D. MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : • Sensitive logic input protection ■ Microprocessor based equipment ■ Audio / Video inputs


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    DALC208SC6 DALC208SC6 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYM1461 r^ Y D P F Q C SEMICONDUCTOR 512Kx 8 Static RAM Module Features Functional Description • High-density 4-m egabit SRAM module T h eC Y M 1461isahigh-perform ance 4-m eg ab itstaticR A M m o d u leorganizedas 512K w ords by 8 bits. This m odule is con­


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    CYM1461 512Kx 1461isahigh-perform 1461PS-70C 1461PF-70C CYM1461LPS-70C 1461LPF-70C 1461PS-85C CYM1461LPS-85C PDF

    DS1280s

    Abstract: dallas ds1280
    Text: DS1280 DS1280 DALLAS SEMICONDUCTOR 3-Wire to Bytewide Converter Chip FEATURES PIN CONNECTIONS • Adapts JEDEC bytewide memory to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for dual port operation


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    DS1280 68-pin 80-pin A11BC A12BC A13RC A14RC A14BC A15BC DS1280s dallas ds1280 PDF

    9114 static ram

    Abstract: dallas ds1280 a17b 68-PIN DS1280 DS1280Q-68 TD1220
    Text: » A L L A S SEMICONDUCTOR CORP 31E D B HblMlBO 0003*133 0 ES DAL O S 1280 • W toàia^ M M éa^ M ni iii ii ì r -iiiJL.V^-r ¿ « .,- Mt. -«h. . '.riti , , tM . \* ^ * 5 0~7 E i£ a « a 081280 DALLAS 3-Wire to Bytewide Converter Chip semiconductor


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    DS1280 68-pin 80-pln DS1280Q-XX DS1280FP-XX 2bl4130 DS1280Q-68 9114 static ram dallas ds1280 a17b DS1280 TD1220 PDF