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    A1309 TRANSISTOR Search Results

    A1309 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A1309 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ80

    Abstract: C67078-A1309-A3 BUZ80A BUZ 80
    Text: SIPMOS Power Transistors BUZ 80 BUZ 80 A ● N channel ● Enhancement mode Type VDS ID RDS on Package 1) Ordering Code BUZ 80 800 V 2.6 A 4.0 Ω TO-220 AB C67078-A1309-A2 BUZ 80 A 800 V 3.0 A 3.0 Ω TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter


    Original     		PDF O-220 C67078-A1309-A2 C67078-A1309-A3 BUZ80 C67078-A1309-A3 BUZ80A BUZ 80

    transistor vds rds 12 id 80a to220

    Abstract: BUZ 80A A1309 BUZ 840 C67078-A1309-A3
    Text: BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80A 800 V 3A 3Ω TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage


    Original     		PDF O-220 C67078-A1309-A3 transistor vds rds 12 id 80a to220 BUZ 80A A1309 BUZ 840 C67078-A1309-A3

    buz80

    Abstract: TR 308 OF
    Text: SIEMENS BUZ 80 BU Z8 0A SIPMOS Power MOS Transistors BUZ 307 BU Z308 VDS = 800 V /q = 2.6 . 3.0 A ^DS on = 3.0 . 4.0 Q • N channel • Enhancement mode • Packages: TO-220AB TO-218AA (TOP-3) ') Type Ordering code BUZ 80 C67078-A1309-A2 BUZ 80 A C67078-A1309-A3


    OCR Scan     		PDF O-220AB O-218AA C67078-A1309-A2 C67078-A1309-A3 C67078-A3100-A2 C67078-A3109-A2 buz80 TR 308 OF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 80 BUZ 80 A SIPMOS Power Transistors • • N channel Enhancement mode ; Ordering Code 'ns Id ^ D S on Package1) BUZ 80 800 V 2.6 A 4.0 a TO-220 AB C67078-A1309-A2 BUZ 80 A 800 V 3.0 A 3.0 n TO-220 AB C67078-A1309-A3 Type Maximum Ratings Parameter


    OCR Scan     		PDF O-220 C67078-A1309-A2 C67078-A1309-A3

    BUZ80A

    Abstract: No abstract text available
    Text: SIEMENS BUZ80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b 3A ^DSion Package Ordering Code 3Q TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vds v DGR Drain-gate voltage Rgs = 20 ki2


    OCR Scan     		PDF BUZ80A O-220 C67078-A1309-A3 BUZ80A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values


    OCR Scan     		PDF O-220 C67078-A1309-A3 B23SL BUZ80A 235bGS