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    A1281 TRANSISTOR Search Results

    A1281 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A1281 TRANSISTOR Datasheets Context Search

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    transistor A1281

    Abstract: a1281 A1281 TRANSISTOR A1281 Y KSA1281YBU KSA1281
    Text: KSA1281 KSA1281 Audio Power Amplifier • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		PDF KSA1281 O-92L KSA1281 KSA1281OBU KSA1281OTA KSA1281YBU KSA1281YTA transistor A1281 a1281 A1281 TRANSISTOR A1281 Y