A1241 SEMICONDUCTOR Search Results

A1241 SEMICONDUCTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPHR7404PU		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A1241 SEMICONDUCTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A1241 Abstract: a1241 semiconductor transistor a1241 transistor a1241 datasheet kta1241 KEC transistor kec a1241 datasheet KTA1241 kec a1241 kta124 Text: SEMICONDUCTOR KTA1241 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name A1241 KTA1241 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade	Original	KTA1241 O-92L A1241 A1241 a1241 semiconductor transistor a1241 transistor a1241 datasheet kta1241 KEC transistor kec a1241 datasheet KTA1241 kec a1241 kta124	PDF
transistor a1241 Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K Text: BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal galvanic isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363	Original	VPS05604 Q62702-A1241 OT-363 Apr-24-1998 EHB00025 EHB00022 transistor a1241 A1241 transistor a1241 datasheet VPS05604 5-30K	PDF
transistor a1241 Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SA1241 2SC3076 transistor a1241 a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor	PDF
transistor a1241 Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076	PDF
Untitled Abstract: No abstract text available Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SA1241 2SC3076	PDF
transistor a1241 Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41	PDF
a1241 semiconductor Abstract: transistor a1241 a1241 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SA1241 2SC3076 a1241 semiconductor transistor a1241 a1241	PDF
transistor a1241 Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41	PDF
Untitled Abstract: No abstract text available Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SA1241 2SC3076	PDF
transistor a1241 Abstract: a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SA1241 2SC3076 transistor a1241 a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076	PDF
Untitled Abstract: No abstract text available Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SA1241 2SC3076	PDF
transistor a1241 Abstract: transistor a1241 datasheet a1241 semiconductor a1241 transistor 2sa1241 2SA1241 2SC3076 Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SA1241 2SC3076 transistor a1241 transistor a1241 datasheet a1241 semiconductor a1241 transistor 2sa1241 2SA1241 2SC3076	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF

MCIMX51RM Abstract: Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129 Text: An errata for this document is available. See Document ID#: IMX51RMAD. MCIMX51 Multimedia Applications Processor Reference Manual MCIMX51RM Rev. 1 2/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:	Original	IMX51RMAD. MCIMX51 MCIMX51RM EL516 MCIMX51RM Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129	PDF
Ry110 Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717 Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F \| 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #	OCR Scan	QD0D013 534-61S1 A1D207A A1D207E A1E207A A1E207E A1A210D A1A210E A1B210D A1B210E Ry110 diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717	PDF