JESD97
Abstract: M29F400 M29F400B M29F400BB M29F400BT
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical
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M29F400BT
M29F400BB
512Kb
256Kb
JESD97
M29F400
M29F400B
M29F400BB
M29F400BT
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A67L73361
Abstract: A67L83181
Text: A67L83181/A67L73361 Preliminary 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 8, 2005 Preliminary
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A67L83181/A67L73361
A67L73361
A67L83181
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Untitled
Abstract: No abstract text available
Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W400BT
M29W400BB
512Kb
256Kb
TSOP48
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M29W400
Abstract: nc 555 M29W400BB M29W400BT TFBGA48
Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME FBGA – 10µs per Byte/Word typical
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M29W400BT
M29W400BB
512Kb
256Kb
TSOP48
TFBGA48
M29W400
nc 555
M29W400BB
M29W400BT
TFBGA48
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M50FW002
Abstract: PLCC32
Text: M50FW002 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase
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M50FW002
256Kb
PLCC32
M50FW002
PLCC32
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Untitled
Abstract: No abstract text available
Text: 4 Mbit x16 Multi-Purpose Flash Plus A Microchip Technology Company SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C Data Sheet The SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary,
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SST39VF401C
SST39VF402C
SST39LF401C
SST39LF402C
SST39LF402C
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JESD97
Abstract: M29F400 M29F400B M29F400BB M29F400BT K 1603 24v
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Features • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks
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M29F400BT
M29F400BB
512Kb
256Kb
JESD97
M29F400
M29F400B
M29F400BB
M29F400BT
K 1603 24v
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Untitled
Abstract: No abstract text available
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5V±10% supply voltage for program, erase and read operations ■ Access time: 45ns ■ Programming time – 8µs per Byte/Word typical ■
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M29F400BT
M29F400BB
512Kb
256Kb
10erein
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Untitled
Abstract: No abstract text available
Text: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME
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M29W400DT
M29W400DB
512Kb
256Kb
TSOP48
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Untitled
Abstract: No abstract text available
Text: M50FW002 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase (optional)
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M50FW002
256Kb
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M29DW324D
Abstract: M76DW52004TA Stacked 4MB NOR FLASH
Text: M76DW52004TA M76DW52004BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot
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M76DW52004TA
M76DW52004BA
32Mbit
256Kb
LFBGA73
0020h
M76DW52004TA:
225Ch
M76DW52004BA:
M29DW324D
M76DW52004TA
Stacked 4MB NOR FLASH
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J32CG
Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0
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750GX
TSI108
RS232
NC7SZ00
J32CG
61a3 mosfet
BCM5461KFB
61a3
58A6
bcm5461
60F10
L32SD
DQ27152
A26B4
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3348DC
Abstract: No abstract text available
Text: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read SO44 (M)(1) Access time: 45, 55, 70 ns Programming time – 10 s per byte/word typical
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M29W400DT
M29W400DB
0020h
3348DC
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Untitled
Abstract: No abstract text available
Text: M50LPW002 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase
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M50LPW002
256Kb
PLCC32
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Stacked 4MB NOR FLASH & SRAM
Abstract: m76 symbol M76 switch M29DW323D M76DW52003BA M76DW52003TA
Text: M76DW52003TA M76DW52003BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot
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M76DW52003TA
M76DW52003BA
32Mbit
256Kb
LFBGA73
0020h
M76DW52003TA:
225Eh
M76DW52003BA:
Stacked 4MB NOR FLASH & SRAM
m76 symbol
M76 switch
M29DW323D
M76DW52003BA
M76DW52003TA
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M29W400BB
Abstract: M29W400BT TFBGA48 M29w400 application
Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME FBGA – 10µs per Byte/Word typical
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M29W400BT
M29W400BB
512Kb
256Kb
TSOP48
TFBGA48
M29W400BB
M29W400BT
TFBGA48
M29w400 application
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Untitled
Abstract: No abstract text available
Text: M50FW002 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase (optional)
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M50FW002
256Kb
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low pin count lpc
Abstract: No abstract text available
Text: M50LPW002 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase
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M50LPW002
256Kb
low pin count lpc
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Untitled
Abstract: No abstract text available
Text: M50LPW020 2 Mbit 256Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for
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M50LPW020
256Kb
PLCC32
33oned
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Untitled
Abstract: No abstract text available
Text: M50LPW002 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase
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M50LPW002
256Kb
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Untitled
Abstract: No abstract text available
Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical
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M29W400BT
M29W400BB
512Kb
256Kb
TSOP48
FBGA48
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Untitled
Abstract: No abstract text available
Text: M50LPW012 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations ■ – VPP = 12V for Fast Program and Fast Erase LOW PIN COUNT (LPC) – Standard Interface for embedded operation
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M50LPW012
256Kb
PLCC32
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29lv400
Abstract: AS29LV400
Text: 6HSWHPEHU 3UHOLPLQDU\ ,QIRUPDWLRQ $6 /9 9 . [ . î &026 ODVK 3520 )HDWXUHV • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts
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48-pin
44-pin
512Kx8/256Kx16
29lv400
AS29LV400
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J-STD-020B
Abstract: M36W0R5020B0 M36W0R5020T0 m36w0r5
Text: M36W0R5020T0 M36W0R5020B0 32 Mbit 2Mb x16, Multiple Bank, Burst Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM • SUPPLY VOLTAGE
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M36W0R5020T0
M36W0R5020B0
256Kb
8814h
8815h
J-STD-020B
M36W0R5020B0
M36W0R5020T0
m36w0r5
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