finder 94.74
Abstract: isolierte Steckh Faston finder 94.04 SCHRUMPFSCHLAUCH varistor NS 332 99.01.2.000.00 finder 55.32 Relais 12v DC relais vde 0435 varistor 222 ac
Text: Serie 55 - Industrie-Relais 7 - 10 A 55.12 55.13 55.14 Miniatur-Industrie-Relais für Leiterplatte oder steckbar • Spulen für AC und DC nach VDE 0435 / EN 61810-1 • Relaisschutzart: RT III waschdicht bei 55.12, 13, 14 erhältlich • Zeitrelais mit dem gleichen Pining wie
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
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MRF9582NT1
MRF9582NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
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MRF9582NT1
MRF9582NT1
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A113
Abstract: MRF9582NT1
Text: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
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MRF9582NT1
A113
MRF9582NT1
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Case 449-02
Abstract: A113 MRF9582NT1
Text: Freescale Semiconductor Technical Data Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA,
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MRF9582NT1
Case 449-02
A113
MRF9582NT1
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zener diode marking R11
Abstract: 5.1 ch amplifier circuit diagram ZENER MARKING r12 "Amplifier Modules" 5.1 v zener RG4 DIODE jedec 0603
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001R2
MMG1001T1
zener diode marking R11
5.1 ch amplifier circuit diagram
ZENER MARKING r12
"Amplifier Modules"
5.1 v zener
RG4 DIODE
jedec 0603
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A113
Abstract: CTB112 CTB132 XMD112 XMD132
Text: Freescale Semiconductor Technical Data Document Number: MMG2001NT1 Rev. 6, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG2001NT1
A113
CTB112
CTB132
XMD112
XMD132
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Abstract: No abstract text available
Text: Document Number: MMG2001NT1 Rev. 6, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology
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5.1 ch amplifier circuit diagram
Abstract: ZENER MARKING r12
Text: Freescale Semiconductor Technical Data MMG1001 Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79−, 112− and 132−Channel Loading • Excellent Distortion Performance • Built−in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001
132-Channel
MMG1001R2
MMG1001T1
5.1 ch amplifier circuit diagram
ZENER MARKING r12
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crcw06031000fkta
Abstract: ZENER DIODE t2 CRCW06031200FKTA Chip Resistors Mounting GaAs FET chip HK160822NJ-T A113 CTB112 CRCW06032001FKTA MMG1001NT1
Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
DataMMG1001NT1
crcw06031000fkta
ZENER DIODE t2
CRCW06031200FKTA
Chip Resistors Mounting
GaAs FET chip
HK160822NJ-T
A113
CTB112
CRCW06032001FKTA
MMG1001NT1
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crcw06031000fkta
Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
Text: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
crcw06031000fkta
CRCW06031200FKTA
CRCW06030000FKTA
CRCW06032001FKTA
GaAs FET chip
A113
CTB112
CTB132
MMG1001NT1
XMD112
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1.5SMC27AT3G
Abstract: No abstract text available
Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,
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MRFG35003N6T1
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6 017 03 61
Abstract: A113 MRFG35010ANT1 MRFG35010NT1 Z16C20
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
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MRFG35010ANT1.
MRFG35010NT1
6 017 03 61
A113
MRFG35010ANT1
Z16C20
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. MRFG35010NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
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MRFG35010N
MRFG35010NT1
MRFG35010ANT1.
MRFG35010NT1
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600S3R9BT
Abstract: GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 1, 5/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of
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MW5IC970NBR1
600S3R9BT
GPS2020
4350B
A113
A114
A115
AN1955
AN1987
C101
JESD22
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s 0938
Abstract: 1348 c23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35010MT1 Advance Information The RF GaAs Line Gallium Arsenide PHEMT 3.5 GHz, 9 W, 12 V
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3332-G
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband
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MW4IC2230NBR1
MW4IC2230GNBR1
MW4IC2230MBR1
MW4IC2230GMBR1
3332-G
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TRANSISTOR 0835
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. MRFG35003M6T1 Advance Information The RF GaAs Line Gallium Arsenide PHEMT 3.5 GHz, 3 W, 6 V
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transistor A106
Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
Text: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A
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LM2639
T025A2
OT-23
SMDIP-10
SO-24
205Inductor
A6S-0104
transistor A106
transistor PNP A105
transistor pnp a110
TRANSISTOR A107
a69 156 transistor
A94 TRANSISTOR A114
TRANSISTOR a105
A107 capacitor
TRANSISTOR A98
motorola mosfet
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Abstract: GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987
Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of
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MW5IC970NBR1
Rogers 4350B
GPS2020
ECJ4YF1H106Z
surface mounted fuse, moisture sensitivity level
4350B
A113
A114
A115
AN1955
AN1987
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MMG2001 Rev. 1, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79−, 112− and 132−Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built−in Input Diode Protection
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG2001NT1 Rev. 5, 10/2006 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability
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MMG2001NT1
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage
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MW4IC915MB/GMB
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