SEMICONDUCTOR a1040
Abstract: A1040-Y A-1040 A1040 a1040 Y marking K A1040 diode KTA1040D dpak Package hFE kec
Text: SEMICONDUCTOR KTA1040D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1040 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1040 KTA1040D 3 hFE Grade Y Y,GR 4 Lot No. 016 00.12.27 Revision No :
|
Original
|
PDF
|
KTA1040D
A1040
SEMICONDUCTOR a1040
A1040-Y
A-1040
A1040
a1040 Y
marking K
A1040 diode
KTA1040D
dpak Package
hFE kec
|
SEMICONDUCTOR a1040
Abstract: A1040 A1040-Y K-EC 02 k a1040 hFE kec marking K KTA1040L
Text: SEMICONDUCTOR KTA1040L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1040 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1040 KTA1040L 3 hFE Grade Y Y,GR 4 Lot No. 016 00.12.27 Revision No :
|
Original
|
PDF
|
KTA1040L
A1040
SEMICONDUCTOR a1040
A1040
A1040-Y
K-EC 02
k a1040
hFE kec
marking K
KTA1040L
|
Newsletter
Abstract: No abstract text available
Text: Website Relaunch Roithner Lasertechnik GmbH www.roithner-laser.com Dear customer, we have rebuilt our website for your full convenience. The main new features are: - clear and fast accessible structure - easy scrolling through the pages - easy ordering and inquiring forms
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com 383-2UYC/S400 TECHNICAL DATA YELLOW AlGaInP LED Technology: AlGaInP structure Peak Wavelength: 590 nm typ.
|
Original
|
PDF
|
383-2UYC/S400
|
Untitled
Abstract: No abstract text available
Text: visit our booth #504 in hall 18 www.roithner-laser.com Let's talk business at Laser Optics Berlin Laser Diodes - 395 nm up to 13.9 um LEDs - 245 nm up to 7.0 um High Power LEDs - 245 nm up to 1550 nm Lasermodules and Lasers - 266 nm up to 1550 nm Laserpointers - 405 nm up to 1550 nm
|
Original
|
PDF
|
|
mcb DATASHEET
Abstract: 660 nm 650-nm LaserTech
Text: HIGH POWER LASERDIODEMODULE TYPE LH 25 mW @ 660 nm or 10 mW @ 650 nm TECHNICAL DATA: • • • • • • • • • • diameter: 17.0 mm, length: 58.0 mm +/- 0.5mm supply voltage: 4.0 . 6.0 VDC 5.0 VDC typ. laserdiode APC available cw laserpower: 25 mW @ 660 nm multimode or 10 mW @ 650 nm singlemode
|
Original
|
PDF
|
LDM660/25LH
mcb DATASHEET
660 nm
650-nm
LaserTech
|
laser modul
Abstract: 650nm 808nm mcb DATASHEET DSA0047704 laserdiodenmodul
Text: LJM LASERDIODENMODUL TYPE modulierbar DC - 360 kHz TECHNISCHE DATEN: • • • • • • • • • • • • • Durchmesser 12mm, Länge: 29.2mm +/- 0.5mm Betriebsspannung Ub: 3.0 . 5.0 VDC Laserdiode leistungsgeregelt Modulierbar DC . 360kHz, Delaytime ON und OFF: typ. 1.8 µs
|
Original
|
PDF
|
360kHz,
830nm)
635nm,
650nm,
660nm,
780nm,
808nm,
830nm
LDM660/3LJM
laser modul
650nm
808nm
mcb DATASHEET
DSA0047704
laserdiodenmodul
|
S6305MG
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com S6305MG TECHNICAL DATA Visible Wavelength Laserdiode Structure: InGaAlP, index guided single transverse mode
|
Original
|
PDF
|
S6305MG
S6305MG
|
QL67D6SA
Abstract: No abstract text available
Text: QL67D6SA InGaAlP Laser Diode 2003. Rev 1. ♦ OVERVIEW QL67D6SA is a MOCVD grown 670 nm band gain-guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5 mW for optoelectronic devices such as Bar Code Reader.
|
Original
|
PDF
|
QL67D6SA
QL67D6SA
|
lasermodul
Abstract: DC10KHz
Text: GLM-xx GREEN LASERMODULES • • • • • • low noise excellent beamquality adjustable power compact size high reliability available cw laser power: 1, 3, 5, 10, 20, 30 mW power transistor with heatsink 40 x 42 x 25 mm³ laser head ∅ 20 x 59 mm modulation
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: visit our booth 5133 in hall D www.roithner-laser.com Let's talk business at SPIE Photonics West Laser Diodes - 395 nm up to 13.9 um LEDs - 245 nm up to 7.0 um High Power LEDs - 365 nm up to 1550 nm Lasermodules and Lasers - 266 nm up to 1550 nm Laserpointers - 405 nm up to 1550 nm
|
Original
|
PDF
|
|
QL63F5SA
Abstract: laser diode 635 nm a1040 Y
Text: QL63F5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL63F5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for optoelectronic devices such as Optical Leveler and Modules.
|
Original
|
PDF
|
QL63F5SA
QL63F5SA
laser diode 635 nm
a1040 Y
|
mcb DATASHEET
Abstract: 650nm 650nm 5mw laser
Text: LASERDIODENMODUL TYPE TR TECHNISCHE DATEN: • • • • • • • • Durchmesser 12.0mm, Länge: 42.5mm +/- 0.5mm Betriebsspannung: 3.0 VDC +/- 0.2VDC Laserleistungen cw: 1mW bis 5mW Wellenlängen: 635nm, 650nm, 660nm 1-linsiger Acrylkollimator, vergütet
|
Original
|
PDF
|
635nm,
650nm,
660nm
LDM660/05TR
mcb DATASHEET
650nm
650nm 5mw laser
|
850 nm LED
Abstract: HIR333
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at HIR333 TECHNICAL DATA INFRARED GaAlAs LED Technology: GaAlAs structure Peak Wavelength: 850 nm typ. Radiant Intensity: 10 mW/sr typ.
|
Original
|
PDF
|
HIR333
850 nm LED
HIR333
|
|
|
oluh
Abstract: No abstract text available
Text: LASERDIODENMODUL TYPE OLUH TECHNISCHE DATEN: • • • • • • • • • • • • ∅ 6.7 mm, Länge: 25.5mm ±0.5 mm Betriebsspannung: min. 2.4 V. max. 3.5 V DC Ideale Betriebsspannung: 3.0 V DC Betriebsstrom: ca. 50 . 80 mA Betriebstemperatur: - 20° C . + 50° C
|
Original
|
PDF
|
LDM635/3-OLUH
oluh
|
Untitled
Abstract: No abstract text available
Text: Green Laserpointer Sales Promotion we offer a top quality green laserpointer at an unbeatable low price: EUR 19.90 USD 29.70 model: S200-5R wavelength: 532 nm laser power: <5 mW S200-5R green laserpointer, all metal housing, including 2 x AAA batteries, box and instructions
|
Original
|
PDF
|
S200-5R
S200-5R
|
383UWC
Abstract: No abstract text available
Text: 990705 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com 383UWC TECHNICAL DATA WHITE GaN LED Technology: Blue GaN LED + phosphor Luminous Intensity: 2.3 cd
|
Original
|
PDF
|
383UWC
383UWC
|
LDM635/3-OLUX
Abstract: No abstract text available
Text: LASERDIODENMODUL TYPE OLUX TECHNISCHE DATEN: • • • • • • • • • • • • ∅ 6.7 mm, Länge: 17.5mm ±1.0 mm Betriebsspannung: min. 2.4 V. max. 3.5 V DC Ideale Betriebsspannung: 3.0 V DC Betriebsstrom: ca. 25 . 60 mA Betriebstemperatur: - 20° C . + 50° C
|
Original
|
PDF
|
LDM635/3-OLUX
LDM635/3-OLUX
|
635 nm
Abstract: 650 nm 780 nm laser 850 nm DSA0047704 laser modul roithner lj lj laser LaserTech
Text: LASERDIODEMODULES TYPE LJ TECHNICHAL DATA • • • • • • • • • • • • • • Diameter 12 mm, length 29.2 mm +/- 0.5 mm Supply voltage: 3.0 . 6.0 VDC max. On delay time: typ. 160 µs Off delay time: typ. 70 µs Modulation via supply voltage: DC . 10 kHz (max.)
|
Original
|
PDF
|
temper80
LDM660/3LJ
635 nm
650 nm
780 nm
laser 850 nm
DSA0047704
laser modul
roithner lj
lj laser
LaserTech
|
635 nm
Abstract: 650 nm Fleischmann lasertechnik power led 650 nm
Text: LASERDIODEMODULE TYPE LT TECHNICAL DATA: • • • • • • • • • • • • diameter 12.7 mm, length 50.8 mm +/- 0.5 mm supply voltage: 4.0 . 6.0 VDC 5.0 VDC typ. LED supply voltage indicator on backside laserdiode powerregulated, cw, power adjustable
|
Original
|
PDF
|
LDM660/05LT
635 nm
650 nm
Fleischmann
lasertechnik
power led 650 nm
|
780NM Laser-Diode
Abstract: 650nm laser modul M11X
Text: LASERDIODEMODULE TYPE LTM modulable DC . 1 MHz TECHNICAL DATA: • • • • • • • • • • • diameter: 12.7mm, length: 50.8mm +/- 0.5mm supply voltage: 4.0 . 6.0 VDC 5.0 VDC typ. modulable DC . 1 MHz. HC, TTL compatible, 0 V: laser OFF, 5 V: Laser ON
|
Original
|
PDF
|
830nm)
635nm,
650nm,
660nm,
780nm,
808nm,
830nm,
850nm
LDM660/03LTM
780NM Laser-Diode
650nm
laser modul
M11X
|
SMF-28 optical fiber
Abstract: Fabry-Perot-Laser-Diode
Text: 645 ÷ 660 nm LFO-65-d CW output power >1.0 mW Description: LFO-65-d - is a series of optical module on the base of uncooled Fabry-Perot laser diode coupled with singlemode SMF-28 optical fiber. Hermetically sealed modules are performed in standard coaxial package with built-in
|
Original
|
PDF
|
LFO-65-d
LFO-65-d
SMF-28
SMF-28 optical fiber
Fabry-Perot-Laser-Diode
|
Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43 44 office@roithner-laser.com www.roithner-laser.com DDW-UJ2-TU1-1 white SMD LED DomiLED-White DATA SHEET DATE ：2002/1/17 DEVICE NO REVISION
|
Original
|
PDF
|
460nm
|
2 Wavelength Laser Diode
Abstract: QL65D5SA 650 DIODE 650-nm Laser Diode 10 pin Roithner-Laser QL65D5S
Text: QL65D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Pointer and Bar Code Reader.
|
Original
|
PDF
|
QL65D5SA
QL65D5SA
2 Wavelength Laser Diode
650 DIODE
650-nm
Laser Diode 10 pin
Roithner-Laser
QL65D5S
|
