FM16W08
Abstract: No abstract text available
Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM16W08
64Kbit
FM16W08,
00002G
FM16W08-SG
A103700002G
FM16W08
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM16W08
64Kbit
FM16W08
64-kilobit
FM16W08,
00002G
FM16W08-SG
A103700002G
|
FM1608B-SG
Abstract: AEC-Q100-002 MS-013 FM1608B
Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
FM1608B
64-kilobit
MS-013
FM1608B,
00002G
FM1608B-SG
A103700002G
FM1608B-SG
AEC-Q100-002
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
28-pin
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
|
FM16W08
64Kbit
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
28-pin
MS-013
FM1608B,
00002G
FM1608B-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1608B
64Kbit
28-pin
FM1608B,
00002G
FM1608B-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
|
PDF
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FM18W08
256Kb
256Kbit
32Kx8
FM18W08,
00002G
FM18W08-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM18W08
256Kb
256Kbit
32Kx8
FM18W08,
00002G
FM18W08-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM18W08
256Kb
256Kbit
32Kx8
FM18W08,
00002G
FM18W08-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1608B
64Kbit
FM1608B
64-kilobit
FM1608B,
00002G
FM1608B-SG
A103700002G
|
FM18W08
Abstract: FM18W08-SG FM18W08-S AEC-Q100-002 MS-013 fm18w08sg cmos disadvantages
Text: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM18W08
256Kb
256Kbit
FM18W08
256-kilobit
28-pin
MS-013
FM18W08,
00002G
FM18W08-SG
FM18W08-S
AEC-Q100-002
fm18w08sg
cmos disadvantages
|
FM16W08
Abstract: FM16W08-SG AEC-Q100-002 MS-013
Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM16W08
64Kbit
FM16W08
64-kilobit
28-pin
MS-013
FM16W08,
00002G
FM16W08-SG
FM16W08-SG
AEC-Q100-002
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ 75°C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1808B
256Kb
256Kbit
32Kx8
28-pin
|
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1808B
256Kb
256Kbit
32Kx8
28-piV
28-pin
MS-013
FM1808B,
00002G
FM1808B-SG
|
fm16w08
Abstract: fm16w08-sg
Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM16W08
64Kbit
Temperature10
FM16W08,
00002G
FM16W08-SG
A103700002G
fm16w08
|
FM1808B
Abstract: FM1808B-SG
Text: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1808B
256Kb
256Kbit
32Kx8
28-pin
FM1808B,
00002G
FM1808B-SG
A103700002G
FM1808B
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1608B
64Kbit
28-pin
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM18W08
256Kb
256Kbit
32Kx8
28-piness
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1608B
64Kbit
28-pin
FM1608B,
00002G
FM1608B-SG
A103700002G
|
FM1808B-SG
Abstract: No abstract text available
Text: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1808B
256Kb
256Kbit
32Kx8
28-pi
FM1808B,
00002G
FM1808B-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM16W08
64Kbit
FM16W08
28-pin
MS-013
FM16W08,
00002G
FM16W08-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM18W08
256Kb
256Kbit
FM18W08
256-kilobit
FM18W08,
00002G
FM18W08-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
|
Original
|
PDF
|
FM1808B
256Kb
256Kbit
FM1808B
256-kilobit
FM1808B,
00002G
FM1808B-SG
A103700002G
|