LM-101-A102
Abstract: No abstract text available
Text: LM-101-A102 650nm Diode Line Laser Module Multi purpose, high quality, low cost red laser diode line generating module. Driver electronics already included. Laser class II device Specifications 25°C Min. Optical CW Output Power PO Center Wavelength λC
|
Original
|
LM-101-A102
650nm
NP303ice
NP303YS
NP601SZ
LM-101-A102
|
PDF
|
High Flux RGB LED
Abstract: "Deep Red Led" LED FLUX UV 400nm 740nm zener diode color codes rgb led 4.4mm x 4.4mm 1XXXXX rgbw VIOLET
Text: High Luminous Efficacy Deep Red LED Emitter LZ1-00R200 Key Features • High Efficacy 5W Deep Red LED • Ultra-small foot print – 4.4mm x 4.4mm Surface mount ceramic package with integrated glass lens Very high Radiant Flux density Autoclave complaint JEDEC JESD22-A102-C
|
Original
|
LZ1-00R200
JESD22-A102-C)
LZ1-00R200
High Flux RGB LED
"Deep Red Led"
LED FLUX UV 400nm
740nm
zener diode color codes
rgb led 4.4mm x 4.4mm
1XXXXX
rgbw
VIOLET
|
PDF
|
a106 diode
Abstract: diode A106 ADA750F 178289-5 ada1000f-24 A-102 AC264V ADA750F-24 ada750 A102
Text: Instruction Manual Unit type 1 2 3 Function A-102 1.1 Input voltage range A-102 1.2 Inrush current limiting A-102 1.3 Overcurrent protection A-102 1.4 Peakcurrent protection A-102 1.5 Thermal protection A-102 1.6 Overvoltage protection A-102 1.7 Output voltage adjustment range
|
Original
|
ADA600F
ADA750F
ADA1000F
a106 diode
diode A106
ADA750F
178289-5
ada1000f-24
A-102
AC264V
ADA750F-24
ada750
A102
|
PDF
|
inverter welding machine circuit board
Abstract: CPF00 JVOP-160 yaskawa inverter contactors yaskawa A70P900 yaskawa dynamic braking unit diagram MC 1200 Motor Control Board H3 OMRON 2.5 kva inverter history references
Text: Spain Tel: +34 913 777 900 www.omron.es Belgium Tel: +32 0 2 466 24 80 www.omron.be Germany Tel: +49 (0) 2173 680 00 www.omron.de Norway Tel: +47 (0) 22 65 75 00 www.omron.no Sweden Tel: +46 (0) 8 632 35 00 www.omron.se Czech Republic Tel: +420 234 602 602
|
Original
|
E2-01)
EN-24
inverter welding machine circuit board
CPF00
JVOP-160
yaskawa inverter
contactors yaskawa
A70P900
yaskawa dynamic braking unit diagram
MC 1200 Motor Control Board
H3 OMRON
2.5 kva inverter history references
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D IO D E M O D U L E DD200HB Power Diode Module D D 200H B series are designed for various rectifier circuits. D D 200H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V
|
OCR Scan
|
DD200HB
E76102
M8X14
|
PDF
|
SDP02S60
Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
|
Original
|
SIDC00D60SIC2
SIDC00D60SIC2
Q67050-A4201sawn
Q67050-A4201unsawn
L4834A,
SDP02S60
SWITCHING DIODE 600V 2A
A102 diode
sdp02s
|
PDF
|
ANPEC
Abstract: A102 APX9031 J-STD-020A ED-7500A EIAJ ED-7500A
Text: APX9031 Hall Effect Sensor IC Features General Description • • The APX9031 is an integrated Hall Effect Sensor IC designed for electric commutation of DC brushless motor applications. Even with a reverse voltage protection diode, the APX9031 still can operate at as
|
Original
|
APX9031
APX9031
O-92M3
OT-89
24F-1.
ANPEC
A102
J-STD-020A
ED-7500A
EIAJ ED-7500A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APX9145 High Sensitivity Hall Effect Sensor IC with FG Output Features General Description • On-chip Hall Sensor The APX9145 is an integrated Hall Effect Sensor IC • Build-in Output Zener Diodes to Clamp the Peak with f requency generation output for electric
|
Original
|
APX9145
APX9145
O-92M4
400mA
O-92M
24F-1.
|
PDF
|
A101
Abstract: A102 EN60747-5-2 KTLP160J
Text: cosmo KTLP160J High Reliability Photocoupler UL 1577 File NO.E169586 Features VDE EN60747-5-2 (File No.40009235) Outside Dimension:Unit (mm) 1. Opaque type, mini-flat package. 2. Subminiature type cosmo (The volume is smaller than that of our \ 160J ' XXX -
|
OCR Scan
|
KTLP160J
E169586)
EN60747-5-2
2500Vrms)
Ta-25
A101
A102
EN60747-5-2
KTLP160J
|
PDF
|
hall elements dc fan
Abstract: 2505 hall ic B2 marking code Zener A102 APX9145 marking ifg TO-92M4 905H2
Text: APX9145 High Sensitivity Hall Effect Sensor IC with FG Output Features General Description • On-chip Hall Sensor The APX9145 is an integrated Hall Effect Sensor IC • Build-in Output Zener Diodes to Clamp the Peak wit h frequenc y generat ion out put for elec t ric
|
Original
|
APX9145
APX9145
400mA
O-92M
X9145
O-92M4
hall elements dc fan
2505 hall ic
B2 marking code Zener
A102
marking ifg
TO-92M4
905H2
|
PDF
|
APM2800B
Abstract: STD-020C SOT-23-5 MARKING VF
Text: APM2800B N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged (5)
|
Original
|
APM2800B
OT-25
OT-23-5
APM2800B
STD-020C
SOT-23-5 MARKING VF
|
PDF
|
MARKING B4 SOT-25
Abstract: SOT-23-5 MARKING VF APM2801B STD-020C mosfet b4 C145M
Text: APM2801B P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • -20V/-1.5A , RDS ON =145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged
|
Original
|
APM2801B
-20V/-1
OT-25
APM28
OT-23-5
MARKING B4 SOT-25
SOT-23-5 MARKING VF
APM2801B
STD-020C
mosfet b4
C145M
|
PDF
|
MIP0224SY
Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Text: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise
|
OCR Scan
|
ZUP-200
1A548-79-01
R-2-12
R-13-14
R-15-16
R-17-30
ZUP-200
RCR-9102)
MIL-HDBK-217F.
GENRAD-2503.
MIP0224SY
2SK1937
t201 transformer
M51995AFP
mip0224
Nemic-Lambda CN
d1fl20u
0134G
ZUP20
|
PDF
|
apm28
Abstract: A104 diode
Text: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
|
Original
|
APM2804QA
-20V/-2
500mA.
APM2804
JESD-22,
apm28
A104 diode
|
PDF
|
|
|
APM2807QB
Abstract: ANPEC APM2807 B102 JESD-22 J-STD-020D
Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • C G A S NC D -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V D C RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A NC SBD G S (3)
|
Original
|
APM2807QB
-20V/-2
500mA.
JESD-22,
APM2807QB
ANPEC
APM2807
B102
JESD-22
J-STD-020D
|
PDF
|
M2805
Abstract: No abstract text available
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • C8 A1 RDS ON = 120mΩ(typ.) @ VGS= -2.5V A2 S3 Super High Dense Cell Design Reliable and Rugged G4 Top View of DFN3x2-8 D (5, 6) C (7, 8) S (3) A (1, 2) VF=0.45V (typ.) @ If=500mA.
|
Original
|
APM2805QA
-20V/-2
500mA.
APM2805
150oC
Co0-2000
M2805
|
PDF
|
M2805
Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Text: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged
|
Original
|
APM2805QA
-20V/-2
500mA.
JESD-22,
M2805
APM2805
APM2805QA
JESD-22
MO-229
ANPEC
c125t
|
PDF
|
APM2803
Abstract: APM2803CG STD-020C
Text: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6
|
Original
|
APM2803CG
-20V/-1
APM2803
APM2803CG
STD-020C
|
PDF
|
DIODE marking S4 23a
Abstract: No abstract text available
Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C G S MOSFET • -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A Reliable and Rugged NC D
|
Original
|
APM2807QB
-20V/-2
500mA.
APM2807
150oC
R0-2000
DIODE marking S4 23a
|
PDF
|
STD-020C
Abstract: APM2803 APM2803CG
Text: APM2803CG P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • -20V/-1.5A, C RDS ON =145mΩ(typ.) @ VGS=-4.5V G RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • S A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6
|
Original
|
APM2803CG
-20V/-1
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
STD-020C
APM2803
APM2803CG
|
PDF
|
APM2802CG
Abstract: APM2802 STD-020C
Text: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features D MOSFET NC • C 20V/3A, RDS ON =50mΩ(typ.) @ VGS=4.5V G S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Reliable and Rugged Top View of JSOT-6
|
Original
|
APM2802CG
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM2802CG
APM2802
STD-020C
|
PDF
|
APM2802CG
Abstract: APM2802
Text: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET D NC • C 20V/3A, G RDS ON =50mΩ(typ.) @ VGS=4.5V S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Top View of JSOT-6 Reliable and Rugged
|
Original
|
APM2802CG
APM2802CG
APM2802
|
PDF
|
marking 6AC sot23
Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode MOSFET Features TDM3415S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
|
Original
|
TDM3415S
-20V/-1
OT23-3L
TDM3415Sâ
TDM341
TDM2301S
23-3L
marking 6AC sot23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302S Pin Description 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
|
Original
|
TDM2302S
OT23-3L
TDM2302Sâ
TDM2302S
23-3L
|
PDF
|
