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    Vishay Semiconductors VS-GA100TS120UPBF

    IGBT MOD 1200V 182A INT-A-PAK
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    A100TS120U Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: International IO R Rectifier PD - 5.060 PRELIMINARY G A 100T S 1 2 0 U Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features V q e s — 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD - 5.060A A100TS120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE” IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF GA100TS120U

    Untitled

    Abstract: No abstract text available
    Text: International I R Recti fi G f PD - 5.060A PR E LIM IN A R Y A100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200


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    PDF GA100TS120U

    18672

    Abstract: 100TS120U
    Text: International IOSR Rectifier PD - 5.060A A100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode


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    PDF 8-40kHz 200kHz GA100TS120U A100TS120U 18672 100TS120U