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    A07 MOSFET Search Results

    A07 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    A07 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A07 mosfet

    Abstract: Dual p-Channel MOSFET SOP8 P-Channel MOSFET code 1A P-CHANNEL Dual N & P-Channel Dual P-Channel MOSFET 30v Dual N & P-Channel MOSFET Dual N
    Text: TSM4544D 30V Dual N & P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 5. Drain 2. Gate 1 6. Drain 3. Source 2 7. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V 1 1 2 2 N-Channel 30 P-Channel -30 Features RDS(on)(mΩ) ID (A) 30 @ VGS = 10V 7 44 @ VGS = 4.5V


    Original     		PDF TSM4544D TSM4544DCS A07 mosfet Dual p-Channel MOSFET SOP8 P-Channel MOSFET code 1A P-CHANNEL Dual N & P-Channel Dual P-Channel MOSFET 30v Dual N & P-Channel MOSFET Dual N

    TSM4N60CH

    Abstract: power mosfet 600v 18BSC ITO-220
    Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been


    Original     		PDF TSM4N60 O-220 ITO-220 O-251 O-252 TSM4N60 TSM4N60CH power mosfet 600v 18BSC ITO-220

    Untitled

    Abstract: No abstract text available
    Text: TSM4433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Block Diagram  Advance Trench Process Technology


    Original     		PDF TSM4433 TSM4433CS

    TSM4433

    Abstract: TSM4433CS MOSFET P-channel power mosfet marking A07 27BSC
    Text: TSM4433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM4433 TSM4433CS TSM4433 TSM4433CS MOSFET P-channel power mosfet marking A07 27BSC

    Untitled

    Abstract: No abstract text available
    Text: TSM2N7002E 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 3 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram ● Low On-Resistance: 3Ω ● Low Input and Output Leakage


    Original     		PDF TSM2N7002E OT-23 OT-323 TSM2N7002ECX TSM2N7002ECU 20rty

    18BSC

    Abstract: TSM2N60 TSM2N60CH TSM2N60CP
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 18BSC TSM2N60CH TSM2N60CP

    18BSC

    Abstract: TSM5NS50 TSM5NS50CP SOT-252
    Text: TSM5NS50 500V N-Channel Power MOSFET PRODUCT SUMMARY TO-252 Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 0.8 @ VGS = 10V 4 Features Block Diagram ● Low R DS(on) ● Low Gate Charge ● Unclamped Inductive Switching (UIS) Rated


    Original     		PDF TSM5NS50 O-252 TSM5NS50CP 18BSC TSM5NS50 SOT-252

    TSM2302

    Abstract: TSM2302CX RF TSM2302CX ultra low igss pA mosfet
    Text: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2302 OT-23 TSM2302CX TSM2302 TSM2302CX RF ultra low igss pA mosfet

    TSM3404

    Abstract: tsm3404cx TSM3404CX RF MOSFET N SOT-23 742 mosfet TSM3404 c n-channel mosfet SOT-23 rf id MARKING CODE mosfet
    Text: TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 30 @ VGS = 10V 5.8 43 @ VGS = 4.5V 5.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3404 OT-23 TSM3404CX TSM3404 TSM3404CX RF MOSFET N SOT-23 742 mosfet TSM3404 c n-channel mosfet SOT-23 rf id MARKING CODE mosfet

    p-channel mosfet

    Abstract: P-CHANNEL 30V (DS) MOSFET P-Channel MOSFET code L 1A transistor equivalent book FOR D 1047 27BSC TSM4431 2052
    Text: TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 40 @ VGS = -10V -5.8 70 @ VGS = -4.5V -4.5 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM4431 TSM4431CS p-channel mosfet P-CHANNEL 30V (DS) MOSFET P-Channel MOSFET code L 1A transistor equivalent book FOR D 1047 27BSC TSM4431 2052

    p-channel mosfet

    Abstract: P-Channel MOSFET code L 1A 27BSC TSM9434
    Text: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM9434 TSM9434CS p-channel mosfet P-Channel MOSFET code L 1A 27BSC TSM9434

    marking code 67a sot23 6

    Abstract: mosfet 452 TSM3424 MARKING SO SOT26
    Text: TSM3424 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3424 OT-23 TSM3424CX6 OT-26 marking code 67a sot23 6 mosfet 452 TSM3424 MARKING SO SOT26

    TSM2313CX

    Abstract: TSM2313 MARKING 33A DIODE SOT23 TSM2313CX RF
    Text: TSM2313 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 70 @ VGS = -4.5V -3.3 90 @ VGS = -2.5V -2.0 130 @ VGS = -1.8V -1.0 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM2313 OT-23 TSM2313CX TSM2313 MARKING 33A DIODE SOT23 TSM2313CX RF

    27BSC

    Abstract: TSM9434D Dual p-Channel MOSFET SOP8
    Text: TSM9434D 20V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 1 1 2 2 -20 Features ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 Block Diagram


    Original     		PDF TSM9434D TSM9434DCS 27BSC TSM9434D Dual p-Channel MOSFET SOP8

    27BSC

    Abstract: TSM9933D
    Text: TSM9933D 20V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 1 1 2 2 -20 Features ID (A) 65 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram


    Original     		PDF TSM9933D TSM9933DCS 27BSC TSM9933D

    TSM3404

    Abstract: No abstract text available
    Text: TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 30 @ VGS = 10V 5.8 43 @ VGS = 4.5V 5.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3404 OT-23 TSM3404CX TSM3404

    Untitled

    Abstract: No abstract text available
    Text: TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(m) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 130 @ VGS = -4.5V -2.8 190 @ VGS = -2.5V -2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2301 OT-23 TSM2301CX

    Untitled

    Abstract: No abstract text available
    Text: TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 100 @ VGS = -4.5V -2.8 150 @ VGS = -2.5V -2.0 190 @ VGS = -1.8V -2.0 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM2301B OT-23 TSM2301BCX

    TSM3401CX RF

    Abstract: No abstract text available
    Text: TSM3401 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 60 @ VGS = 10V -3.0 90 @ VGS = 4.5V -2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3401 OT-23 TSM3401CX TSM3401CX RF

    marking A07

    Abstract: 27BSC TSM9926D TSM9926DCS Dual N-Channel MOSFET SOP8
    Text: TSM9926D 20V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 1 1 2 2 20 Features ID (A) 30 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.2 Block Diagram ●


    Original     		PDF TSM9926D TSM9926DCS marking A07 27BSC TSM9926D Dual N-Channel MOSFET SOP8

    27BSC

    Abstract: TSM4410D TSM4410DCS
    Text: TSM4410D 25V Dual N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain 25 Features ● ● ID (A) 15 @ VGS = 10V 10 21 @ VGS = 4.5V 8 Block Diagram Advance Trench Process Technology


    Original     		PDF TSM4410D TSM4410DCS 27BSC TSM4410D

    TSM3900D

    Abstract: sot 26 Dual N-Channel MOSFET
    Text: TSM3900D 20V Dual N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 20 Features ID (A) 55 @ VGS = 4.5V 2.0 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Block Diagram ●


    Original     		PDF TSM3900D OT-26 TSM3900DCX6 TSM3900D sot 26 Dual N-Channel MOSFET

    27BSC

    Abstract: TSM9433 IDA45
    Text: TSM9433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 45 @ VGS = -4.5V -5.4 70 @ VGS = -2.5V -4.2 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM9433 TSM9433CS 27BSC TSM9433 IDA45

    Untitled

    Abstract: No abstract text available
    Text: TSM9926D 20V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(m) 1 1 2 2 20 Features ID (A) 30 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.2 Block Diagram 


    Original     		PDF TSM9926D TSM9926DCS