Untitled
Abstract: No abstract text available
Text: Supertex inc. TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TP2535
125pF
DSFP-TP2535
A052109
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Untitled
Abstract: No abstract text available
Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2540
125pF
DSFP-TP2540
A052109
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Untitled
Abstract: No abstract text available
Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TP2540
125pF
DSFP-TP2540
A052109
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sivp
Abstract: marking n3 VP0106 125OC VP0106N3-G
Text: VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0106
VP0106
DSFP-VP0106
A052109
sivp
marking n3
125OC
VP0106N3-G
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TP2535
Abstract: sitp TP2535N A052
Text: Supertex inc. TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2535
125pF
DSFP-TP2535
A052109
TP2535
sitp
TP2535N
A052
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SIVP
Abstract: marking n3 TRANSISTOR N3 VP0109 125OC VP0109N3-G VP0109ND
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
VP0109
DSFP-VP0109
A052109
SIVP
marking n3
TRANSISTOR N3
125OC
VP0109N3-G
VP0109ND
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sivn0808l
Abstract: 0808L VN0808 vn 0808l
Text: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination
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VN0808
DSFP-VN0808
A052109
sivn0808l
0808L
VN0808
vn 0808l
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sivp
Abstract: sivp VP0104 VP0104 TO-92- datasheet VP0104N3 125OC VP0104N3-G 500/250/sivp VP0104
Text: VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0104 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0104
VP0104
DSFP-VP0104
A052109
sivp
sivp VP0104
TO-92- datasheet
VP0104N3
125OC
VP0104N3-G
500/250/sivp VP0104
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices
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LP0701
DSFP-LP0701
A052109
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Untitled
Abstract: No abstract text available
Text: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities
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VN0808
DSFP-VN0808
A052109
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LP0701LG-G
Abstract: 125OC LP0701 JEDEC drawing
Text: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices
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LP0701
DSFP-LP0701
A052109
LP0701LG-G
125OC
LP0701
JEDEC drawing
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125OC
Abstract: VP0550
Text: VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0550 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0550
VP0550
DSFP-VP0550
A052109
125OC
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125OC
Abstract: LP0701
Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices
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LP0701
DSFP-LP0701
A052109
125OC
LP0701
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