Marking AAs
Abstract: Q62702-A1084
Text: BAR 80 Silicon RF Switching Diode l l l Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code tape and reel Package Pin configuration 1 2 3 Q62702-A1084 C A 1) 4 C A MW-4 Maximum ratings
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Q62702-A1084
Marking AAs
Q62702-A1084
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BXY43P
Abstract: BXY43P-FP 43P-FP 43p MARKING CODE diode a02
Text: HiRel Silicon PIN Diode BXY 43P Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030
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43P-FP
Q62702X164
Q62702X167
de/semiconductor/products/35/35
de/semiconductor/products/35/353
BXY43P
BXY43P-FP
43P-FP
43p MARKING CODE
diode a02
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44P-FP
Abstract: BXY44P BXY44P-FP Q62702X165 Q62702X166
Text: HiRel Silicon PIN Diode BXY 44P Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030
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44P-FP
Q62702X166
Q62702X165
de/semiconductor/products/35/35
de/semiconductor/products/35/353
44P-FP
BXY44P
BXY44P-FP
Q62702X165
Q62702X166
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Untitled
Abstract: No abstract text available
Text: BAS20H Small Signal Switching Diodes .039 1.0 2 1 .055(1.4) .031(0.8) .045(1.15) .004(0.10 )Max. .071(1.8) .063(1.6) .106(2.7) .091(2.3) .016(0.40) .010(0.25) PRIMARY CHARACTERISTICS IF 200mA VRRM 200V IFSM 625mA VF 1250mV .007(0.18)Max. SOD-323 Dimensions in inches and (millimeters)
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BAS20H
200mA
625mA
1250mV
OD-323
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Untitled
Abstract: No abstract text available
Text: BAS21H Small Signal Switching Diodes .039 1.0 2 1 .055(1.4) .031(0.8) .045(1.15) .004(0.10 )Max. .071(1.8) .063(1.6) .106(2.7) .091(2.3) .016(0.40) .010(0.25) PRIMARY CHARACTERISTICS IF 200mA VRRM 250V IFSM 625mA VF 1250mV .007(0.18)Max. SOD-323 Dimensions in inches and (millimeters)
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BAS21H
200mA
625mA
1250mV
OD-323
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Untitled
Abstract: No abstract text available
Text: BAW56/BAV70/BAV99/BAL99 Small Signal Switching Diodes .119 3.0 .110(2.8) .103(2.6) .086(2.2) .056(1.4) .047(1.2) .007(.17) .002(.05) .007(.20)MIN .083(2.1) .066(1.7) .044(1.1) .035(0.9) .020(.50) .013(.35) .006(.15)MAX PRIMARY CHARACTERISTICS SOT-23 Dimensions in inches and (millimeters)
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BAW56/BAV70/BAV99/BAL99
OT-23
250mW
BAV70
BAW56
BAV99
BAL99
OT-23,
MIL-STD-202,
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W65C265
Abstract: diode u2 a05 diode A23 C2344 62C256 A06 diode a06 transistor W65C265DB W65C265S OSC14A
Text: 5 4 3 2 1 REVISION RECORD LTR E CO NO: A P PROVED: D A T E: VCC_ARROW VCC_ARROW D 2 4 6 8 D J6 JUMPER4 C3 C C4 C C5 C C6 C C7 C C8 C 23 44 63 84 JP3 1 JP4 3 JP5 5 JP6 7 C2 C Y2 1 EN OUT 8 C 17 12 19 18 16 15 J1 1 3 5 7 WE PHI2 SYNC DODB TG1 TG0 VDD VDD VDD
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OSC14A
W65C265S8PL
P41/IRQB
P40/NMIB/ABORTB
PIO30X2
XC9572
W65C265DB
W65C265
diode u2 a05
diode A23
C2344
62C256
A06 diode
a06 transistor
W65C265S
OSC14A
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W65C816
Abstract: A06 diode RWB 252 diode A23 dba1 62C256 27C256 XC9572 a03p a023
Text: 6 5 4 3 2 1 R E V I SION RECORD L TR E C O NO: A P P R O V ED: D ATE: VCC_ARROW C6 C7 C8 C9 C10 C11 C12 C C C C C C C GND J8 D D GND VCC_ARROW 4 2 4 2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 OCSE VCC_ARROW 1 21 22 23 24 25 26 27 28 29 30 31 32 J P1
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W65C2
W65C816DB
WD8318
W65C816
A06 diode
RWB 252
diode A23
dba1
62C256
27C256
XC9572
a03p
a023
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W65C02
Abstract: PLD26 62c256 XC9572 A06 diode pld-40 PLD32 PLD33 SW_SPST PLD40
Text: 6 5 4 3 2 1 REVISION RECORD LTR E CO NO: A P PROVED: D A T E: VCC_ARROW C6 C C7 C C8 C C9 C C10 C C11 C C12 C GND J8 D VCC_ARROW +5V 2 4 2 4 VCC_ARROW JP6 JP1 JUMPER2 JUMPER2 A[00:23] 1 3 1 3 A[00:23] D[0:7] VCC_ARROW Y1 EN OUT 8 10 11 13 14 15 16 17 18 19
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62C256
W65C02DB
W65C02
PLD26
62c256
XC9572
A06 diode
pld-40
PLD32
PLD33
SW_SPST
PLD40
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3B27V
Abstract: 3B16V 3B-22 SMB3EZ150 3B91V 3B130V 3B11V ma121
Text: SMB3EZxx SERIES Surface Mount Device 0.086 2.20 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) PRIMARY CHARACTERISTICS 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 6.2~200V VRRM 0.008 (0.203) Max. VF 1.5V
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DO-214AA
DO-214AA
RATINGSZ190
SMB3EZ200
3B170V
3B180V
3B190V
3B200V
3B27V
3B16V
3B-22
SMB3EZ150
3B91V
3B130V
3B11V
ma121
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BCM 4752
Abstract: AM4825P_AP ICS951418 1310A21421-0 Inventec tt1.0 Inventec 8C540 R5C803 BQ24703 BSS84_3P
Text: TT 1.0 MV2 Build 2007/03/02 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TT1.0 SIZE CODE A3 CS SHEET For WWAN Solution REV DOC. NUMBER 1310A21421-0 1 OF A02
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1310A21421-0
RS690T
FM118
FM1118
U8031
FM118
BCM 4752
AM4825P_AP
ICS951418
1310A21421-0
Inventec tt1.0
Inventec
8C540
R5C803
BQ24703
BSS84_3P
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Untitled
Abstract: No abstract text available
Text: 1SS355 Small Signal Switching Diodes .039 1.0 2 1 .055(1.4) .031(0.8) .045(1.15) .004(0.10 )Max. .071(1.8) .063(1.6) .106(2.7) .091(2.3) .016(0.40) .010(0.25) PRIMARY CHARACTERISTICS IF 100 mA VRRM 80 V IFSM 500 mA VF 1.2 V TJ max 125°C .007(0.18)Max. SOD-323
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1SS355
OD-323
2002/95/EC
OD-323
MIL-STD-202,
100mA
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Untitled
Abstract: No abstract text available
Text: BAW56T/BAV70T/BAV99T Small Signal Switching Diodes 4˚ 0˚ .069 1.75 .057 (1.45) .043 (1.10) .035 (0.90) .008 (0.20) .004 (0.10) .004 (0.10) .000 (0.00) .069 (1.75) .057 (1.45) .010 (0.25) .006 (0.15) .0020TYP (0.500)TYP .033 (0.85) .030 (0.75) .022REF (0.55)REF
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BAW56T/BAV70T/BAV99T
0020TYP
022REF
150mW
OT-523
BAV70T:
BAW56T:
BAV99T:
OT-523
MIL-STD-202,
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panasonic r1551
Abstract: Inventec kbc1122 3C1140 U700D CN702 aux m62 ati VAIL2-0 TP9054 slg8lp462
Text: CONISTON 1.0 PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 PAGE PAGE TABLE OF CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM DC & BATTERY CHANGER BATTERY CONN & SELECT SYSTEM POWER +V3A / +V5A CPU POWER (+VCC_CORE) SYSTEM POWER (+VCCP / +V1.5S)
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M52P/M54P/M56P
M52P/M54P/M56PDE
FIX5000
FIX5001
FIX5002
FIX5003
FIX5004
FIX5005
FIX5006
FIX5007
panasonic r1551
Inventec
kbc1122
3C1140
U700D
CN702 aux
m62 ati
VAIL2-0
TP9054
slg8lp462
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Telcordia SR-332 GB
Abstract: No abstract text available
Text: OKX T/10 & T/16-D12 Series www.murata-ps.com Adjustable DOSA 10/16-Amp SIP DC/DC Converters PRODUCT OVERVIEW The OKX-T/10 and -T/16 series are miniature SIP non-isolated Point-of-Load POL switch mode DC/DC power converters for embedded applications. The
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T/16-D12
10/16-Amp
OKX-T/10
-T/16
T10T16
Telcordia SR-332 GB
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Untitled
Abstract: No abstract text available
Text: RBC-12/17-D48 Series www.murata-ps.com Quarter Brick, Regulated Bus Converters Output V Current (A) Nominal Input (V) 12 17 48 Optimized for distributed power Regulated Intermediate Bus Architectures (RIBA), the RBC DC/DC bus converter series offer regulated
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RBC-12/17-D48
2250Vdc)
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Untitled
Abstract: No abstract text available
Text: HPH-12/30-D48 Series www.murata-ps.com Isolated, 12 VOUT, 30A, Half-Brick DC/DC Converters PRODUCT OVERVIEW For applications requiring improved electrical and thermal performance, consider Murata’s new HPH series “Half Brick” DC/DC power converters. These
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HPH-12/30-D48
12Vdc
30Amps
36-75Vdc.
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Untitled
Abstract: No abstract text available
Text: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features RDS(ON) , VGS@10V, ID@4.4A<48mΩ RDS(ON) , VGS@4.5V, ID@3.6A<53mΩ RDS(ON) , VGS@2.5V, ID@2.5A<66mΩ RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ
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PPJA3402
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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mps+0842
Abstract: No abstract text available
Text: UEI25-120 Series www.murata-ps.com Single Output Isolated 25-Watt DC/DC Converters PRODUCT OVERVIEW Typical unit FEATURES Small footprint DC/DC converter, ideal for high current applications Industry standard 0.96" x 1.1" x 0.32" open frame package and pinout
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UEI25
22igure
UEI25-120
mps+0842
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a02 marking code
Abstract: marking AAS diode a02
Text: S IE M E N S BAR 80 Silicon RF Switching Diode • • • Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code tape and reel Package ’ > Pin configuration 1 2 3 Q62702-A1084
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OCR Scan
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Q62702-A1084
volta14
a02 marking code
marking AAS
diode a02
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Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 44P HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Matched diode - pair • Hermetically sealed microwave package @sa qualified
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OCR Scan
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44P-FP
de/semiconductor/products/35/35
de/semiconductor/products/35/353
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Si-MMIC-Amplifier BGA427 in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s21|2=18.5 dB at 1.8 GHz appl.1 Gain |s21f =22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V d=3V, lD=9.4mA)
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BGA427
25-Technology
OT343
Q62702-G0067
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bms 97
Abstract: 37265
Text: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain |s21f =18.5 dB at 1.8 G H z appl.1 Gain |s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)
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BGA427
25-Technology
Q62702-G0067
CP5056G5
bms 97
37265
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.0549
Abstract: marking A02 a02 Transistor rf mje 1827 transistor 139 BF BGA427 GPS05605 Q62702-G0067 transistor NF j1 marking code marking code 8Ff
Text: SIEM ENS BG A427 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=18.5 dB at 1.8 GHz appl.1 Gain |s21f= 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz
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BGA427
25-Technology
OT343
BGA427
Q62702-G0067
.0549
marking A02
a02 Transistor rf
mje 1827
transistor 139 BF
GPS05605
transistor NF j1 marking code
marking code 8Ff
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