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    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25040B FM25040B MS-012 FM25040B, FM25040B-G A00002G1 RIC1051 PDF

    AEC-Q100-003

    Abstract: FM25W256
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25W256 256Kb FM25W256 256-kilobit MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 AEC-Q100-003 PDF

    R5L16B

    Abstract: FM25L16B-GTR fm25l16b-g
    Text: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25L16B FM25L16B FM25L16B, R5L16B FM25L16B-GTR fm25l16b-g PDF

    FM25W256-Gtr

    Abstract: No abstract text available
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM25W256 256Kb FM25W256 256-kilobit FM25W256-Gtr PDF

    R5L16B

    Abstract: AEC-Q100-002 FM25L16B FM25L16B-DG FM25L16B-G
    Text: Preliminary FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L16B FM25L16B 16-kilobit FM25L16B, R5L16B R5L16B AEC-Q100-002 FM25L16B-DG FM25L16B-G PDF

    fm24c04b

    Abstract: No abstract text available
    Text: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		FM24C04B FM24C04B PDF

    FM24CL04BG

    Abstract: No abstract text available
    Text: FM24CL04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1014 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		FM24CL04B FM24CL04B FM24CL04BG PDF

    AEC-Q100-002

    Abstract: FM25160
    Text: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160C MS-012 FM25C160C, FM25C160CG A00002G1 RIC1051 FM25C160C AEC-Q100-002 FM25160 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original     		FM25L04B PDF

    Untitled

    Abstract: No abstract text available
    Text: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		FM24C04B FM24C04B PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		FM25C160B FM25C160B 16-serves PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		FM25040B FM25040B PDF

    FM24CL16BG

    Abstract: fm24cl16b-g AEC-Q100-002 FM24CL16 FM24CL16B
    Text: Preliminary FM24CL16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24CL16B FM24CL16B 16-kilobit FM24CL16B, R4L16B FM24CL16BG fm24cl16b-g AEC-Q100-002 FM24CL16 PDF

    FM25L64B

    Abstract: FM25CL64BG FM25CL64B-G r5l64B FM25CL64B rev 1.0 FM25CL64B-GTR AEC-Q100-002 FM25CL64B FM25CL64B Feb 2011 fm25l64
    Text: Preliminary FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25CL64B FM25CL64B 64-kilobit FM25L64B, R5L64B FM25L64B FM25CL64BG FM25CL64B-G r5l64B FM25CL64B rev 1.0 FM25CL64B-GTR AEC-Q100-002 FM25CL64B Feb 2011 fm25l64 PDF

    FM25L04B

    Abstract: FM-25
    Text: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B FM25L04B FM25L04B, R5L04B FM-25 PDF

    fm24c64b-gtr

    Abstract: FM24C64B
    Text: FM24C64B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM24C64B FM24C64B 64-kilobit MS-012 FM24C64B, FM24C64B-G A00002G1 RIC1047 fm24c64b-gtr PDF

    fm24c04-c-g

    Abstract: No abstract text available
    Text: Preliminary FM24C04C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM24C04C FM24C04C MS-012 FM24C04C, FM24C04C-G A00002G1 RIC1049 fm24c04-c-g PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25C160B MS-012 FM25C160B, FM25C160BG A00002G1 RIC1051 FM25C160B PDF

    Untitled

    Abstract: No abstract text available
    Text: FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM24W256 256Kb FM24W256 256-kilobit FM24W256, FM24W256-EG A00002G1 RIC1037 PDF

    FM24C64B

    Abstract: No abstract text available
    Text: Preliminary FM24W64 64Kb Wide Voltage Serial F-RAM Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM24W64 FM24W64 64-kilobit MS-012 FM24W64, FM24W64-G A00002G1 RIC1046 FM24C64B PDF

    fm25040B-GTR

    Abstract: No abstract text available
    Text: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25040B FM25040B MS-012, MS-012 FM25040B, FM25040B-G A00002G1 RIC1051 fm25040B-GTR PDF

    FM25640B-G

    Abstract: No abstract text available
    Text: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced high-reliability ferroelectric process


    Original     		FM25640B FM25640B 64-kilobit FM25640B-G PDF

    AEC-Q100-002

    Abstract: FM25040
    Text: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25040B MS-012, MS-012 FM25040B, FM25040B-G A00002G1 RIC1051 FM25040B AEC-Q100-002 FM25040 PDF

    AEC-Q100-002

    Abstract: FM25L04B
    Text: Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B FM25L04B FM25L04B, R5L04B AEC-Q100-002 PDF