A TRANSISTOR Search Results

A TRANSISTOR Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

A TRANSISTOR Price and Stock

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onsemi BC858ALT1G PNP Bipolar Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	BC858ALT1G		24,000			1 - 10 - 100 - 1000 - 10000 $0.0113	Buy Now
onsemi SBC856BLT1G PNP Bipolar Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	SBC856BLT1G		16,244			1 - 10 - 100 - 1000 - 10000 $0.0222	Buy Now
onsemi BCP69T1G PNP Bipolar Junction Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	BCP69T1G		3,000			1 - 10 - 100 - 1000 $0.1344 10000 $0.1231	Buy Now
NTE Electronics Inc 2N6725 Transistors - NPN Darlington
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N6725		1,925			1 - 10 $3.35 100 $2.63 1000 $2.33 10000 $2.15	Buy Now
Semiconductors 2N6728 Bipolar Transistor.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N6728		664			1 $4.75 10 $4.75 100 $1.26 1000 $1.26 10000 $1.26	Buy Now

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A TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BLF881 Abstract: No abstract text available Text: A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D Objective data sheet D Rev. 00.02 — 23 January 2009 R R R R R UHF power LDMOS transistor D D D D D BLF881 D FT FT A A R R D D D 1. Product profile	Original	PDF	BLF881 BLF881
BD678 Abstract: BD680 bd680 transistor A-BD678 BD676 BD682 BD682A A-BD682 BD676A Text: PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.	Original	PDF	BD676/A BD678/A BD680/A BD682/A BD676/A-BD678/A-BD680/A-BD682/A O-126 BD675/A-BD677/A-BD679/A-BD681/A BD676/A BD678/A BD680/A BD678 BD680 bd680 transistor A-BD678 BD676 BD682 BD682A A-BD682 BD676A
BD675-BD677-BD679-BD681 Abstract: BD681A transistor BD677 BD677 BD677 transistor BD675 BD681 transistor BD681 BD679 Text: NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.	Original	PDF	BD675/A BD677/A BD679/A BD681/A BD675/A-BD677/A-BD679/A-BD681/A O-126 BD676/A-BD678/A-BD680/A-BD682/A BD675/A BD677/A BD679/A BD675-BD677-BD679-BD681 BD681A transistor BD677 BD677 BD677 transistor BD675 BD681 transistor BD681 BD679
transistor z ss Abstract: No abstract text available Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK711 U nit in mm H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . A M H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 2. 5îg1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S . . •	OCR Scan	PDF	2SK711 O-236MOD SC-59 transistor z ss
2SC5064 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR A A A P A C A - z o ü o Ud 4 U nit in mm V H F - U H F B A N D L O W NOISE A M P LIFIER A PP LIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ldB , \|S2lel2 = 12dB f= lG IIz	OCR Scan	PDF	SC-59 2SC5064 2SC5064
MHQ6002 Abstract: 2N5146 MHQ3467 MPQ6002 MPQ7053 MHQ2222 MHQ2369 MHQ2484 MHQ2907 MHQ3546 Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Quad Transistors MHQ918 MHQ2222 MHQ2369 MHQ2484 NF NG NS NA 0.65 A 0.65 A 0.5 A 0.6 A 15 40 15 40 MHQ2907 MHQ3467 MHQ3546 MHQ3799 PG PS PS PA 0.65 A 0.9 A 0.5 A 0.5 A 40 40 12 60 MHQ4014 MHQ6001 MHQ6002 NS CA CA	OCR Scan	PDF	MHQ918 MHQ2222 MHQ2369 MHQ2484 MHQ2907 MHQ3467 MQ3467 MQ3725 MQ6001 MQ6002 MHQ6002 2N5146 MPQ6002 MPQ7053 MHQ3546
A 933 S transistors Abstract: No abstract text available Text: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)	OCR Scan	PDF	2SC2412K/ 2SC4081 /2SC4617 2SC1740S. 2SA1037AK 2SA1576A SC-59 SC-70 2SA933AS A 933 S transistors
Untitled Abstract: No abstract text available Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK1875 U nit in mm H IG H FREQ U EN CY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 1.25 ±0. 1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S .	OCR Scan	PDF	2SK1875
BD 677 Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd Text: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E	OCR Scan	PDF	O-126- BD 677 BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
d1684 Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249	OCR Scan	PDF	2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
BD - 100 V Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676 Text: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E	OCR Scan	PDF	O-126 BD - 100 V transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
TD62382AP Abstract: No abstract text available Text: TO SHIBA TD62382AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AP, TD62382F, TD62382AF 8CH LOW INPUT ACTIVE SINK DRIVER The TD62382AP/F/AF are non-inverting transistor array \A /h i/* h w v ic a A s k a a i n h + I/*s\a/ e a + i i r a + i r t n	OCR Scan	PDF	TD62382AP/F/AF TD62382AP, TD62382F, TD62382AF TD62382AP/F/AF TD62382AP DIP18-P-300-2 /50mA TD62382F) TD62382AP
Untitled Abstract: No abstract text available Text: TO SHIBA TD62382AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AP, TD62382F, TD62382AF 8CH LOW INPUT ACTIVE SINK DRIVER The TD62382AP/F/AF are non-inverting transistor array \A /h i/* h w v ic a A s k a a i n h + I/*s\a/ e a + i i r a + i r t n	OCR Scan	PDF	TD62382AP/F/AF TD62382AP, TD62382F, TD62382AF TD62382AP/F/AF TD62382AP DIP18-P-300-2 /50mA TD62382F)
sot-23 marking 7z Abstract: LA 7673 S221 LB 11971 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors D e s ig n e d fo r u se in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is s e rie s fe a tu re s e x c e lle n t b ro a d b a n d lin e a rity a n d is o ffe re d in a v a rie ty o f p a c k a g e s .	OCR Scan	PDF	MMBR951 MRF957 MRF9511 OT-23 MMBR951L629 MRF957T1 MRF9S11 sot-23 marking 7z LA 7673 S221 LB 11971

Untitled Abstract: No abstract text available Text: BCX51 BCX52 BCX53 SOT89 PNP SILICON PLANAR M EDIU M POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996_ O C O M P LEM EN T A R Y TYPE - BCX51 - BCX54 BC X52 - BCX55 BCX53 - BCX56 P A R T M A R K IN G D E T A I L S BCX51 BCX52 -A A -A E BCX53 -A H B C X 5 1 -1 0 -A C	OCR Scan	PDF	BCX51 BCX52 BCX53 BCX51 BCX54 BCX55 BCX53 BCX56
transistor TE 901 equivalent Abstract: te 901 pnp Transistor transistor TE 901 TE 901 transistor equivalent Text: Transistors Digital transistors built-in resistors D T A 1 2 3 J E /D T A 1 2 3 J U A /D T A 1 2 3 J K A /D T A 1 2 3 J S A •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit	OCR Scan	PDF	DTA123JUA DTA123JE 223JSA DTA123JE/DTA123JUA/DTA123JKA/DTA123JSA r-200p transistor TE 901 equivalent te 901 pnp Transistor transistor TE 901 TE 901 transistor equivalent
2N2192 Abstract: 2N2193A 2N2193 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192 Text: 2N2192, A 2N2193, A NPN SILICON TRANSISTORS, EPITAXIAL TRANSISTORS NPN SILIC IU M , EP IT A X I A UX - LF large signal amplification i 40 V 2N 2192,A 1 50 V 2N 2193,A A m plification BF grands signaux V CEO * Medium current switching Commutation à moyen gourant	OCR Scan	PDF	150mA) 2N2192 2N2193 2N2193A 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192
KTA817 Abstract: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE KTC1627A KTA817A KTC1627 Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTC1627A APPLICATIONS ) • D r i v e r S ta g e A m p lif ie r A p p lic a tio n s. ■ Voltage A m p lifie r A p p lic a tio n s. ( FEA TU R ES ) • Com plem entary to K T A 8 1 7 A • D riv e r S ta g e A p p lic atio n of 30 to 35 W a tts A m p lifie rs	OCR Scan	PDF	KTC1627A KTA817 75MAX. 80MAX. 60MAX. 92MOD SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE KTC1627A KTA817A KTC1627
BSX51 Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682 Text: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant	OCR Scan	PDF	h80-540 O-181 BSX51 Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
100020010 Abstract: No abstract text available Text: BFQ31 SEM ICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FR E Q U E N C Y A PPLIC A TIO N . V H F B A N D A M PL IFIER A PPLIC A TIO N . M A X IM U M R A TIN G Ta=25°C SYMBOL CHARACTERISTIC Collcctor-Basc Voltage VcBO Collcetor-Emitter Voltage	OCR Scan	PDF	BFQ31 100MHz 60MHz 100020010
BUZ45 Abstract: BUZ 840 Text: SIEMENS SIPMOS Power MOS Transistors BUZ 45 BUZ 45 A BUZ 45 B VDS rn 500 V lD = 8 . 3 . . . 10 A ^DS on = 0-5 . . . 0.8 Q • N channel • Enhancem ent mode • Package: T O -2 04 A A (T O -3 )1) Type Ordering code BUZ 45 C 6 7078-A 1008-A 2 BUZ 45 A C 67078-A 1008-A 3	OCR Scan	PDF	078-A 008-A 7078-A BUZ45 BUZ 840
transistor c111 Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600 Text: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR	OCR Scan	PDF	MCT210 MCT26 MCT66 transistor c111 C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
BC113 Abstract: No abstract text available Text: CONSUMER TRANSISTORS continued < _§ X CD E u > > CD O a. """a) o ’ o o n o @ Li. a. >• UJ ll.c PACKAGE P O L A R ITY DESCRIPTION (A )0 3 3 A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5	OCR Scan	PDF
aiou Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176 Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.	OCR Scan	PDF	E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, IEC204/VDE0113 30A-02 730D-02 aiou H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176

A TRANSISTOR Search Results

A TRANSISTOR Result Highlights (6)

A TRANSISTOR Price and Stock

onsemi BC858ALT1G

onsemi SBC856BLT1G

onsemi BCP69T1G

NTE Electronics Inc 2N6725

Semiconductors 2N6728

A TRANSISTOR Datasheets Context Search

BLF881

BD678

BD675-BD677-BD679-BD681

transistor z ss

2SC5064

MHQ6002

A 933 S transistors

Untitled

BD 677

d1684

BD - 100 V

TD62382AP

Untitled

sot-23 marking 7z

Untitled

transistor TE 901 equivalent

2N2192

KTA817

BSX51

100020010

BUZ45

transistor c111

BC113

aiou