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    A DSM GATE NO Search Results

    A DSM GATE NO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    A DSM GATE NO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY8C27443-24PXI

    Abstract: MODULATOR DSM sample project of digital signal processing IOT02 analog Isolator analog multiplier low voltage analog multiplier Single-Bit ADCs in a Nutshell
    Text: Signals-From-Noise Single-Bit ADCs in a Nutshell - Part III by Dave Van Ess, Principal Application Engineer, Cypress Semiconductor In our last installment http://www.analogZONE.com/iot_0205.htm we explored how to build delta-sigma modulators, handy little devices that convert an analog input into


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    AN1153

    Abstract: ADSP-2185N
    Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory


    Original     		PDF DSM2180F3V ADSP-218X AN1153 ADSP-2185N

    Untitled

    Abstract: No abstract text available
    Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory


    Original     		PDF DSM2180F3 ADSP-218X

    simple ladder motor diagram

    Abstract: Different types of PWM techniques DCPWM 1024R advantages of digital pulse counter nuts CY8C27443 One of the simplest ways to generate a duty cycle is to use a PWM Dave Van Ess
    Text: Single Bit DACs in a Nutshell Part I – DAC Basics By Dave Van Ess, Principal Application Engineer, Cypress Semiconductor Many embedded applications require generating analog outputs under digital control. It may be a DC reference voltage or an AC signal to stimulate transducers. It may be a reconstructed voice signal for some


    Original     		PDF

    an1171

    Abstract: adsp 2186 instruction set transistor 13003 AD11 AD12 AD14 ADSP-218X DSM2180F3 PLCC52 PQFP52
    Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ■ 128K Byte Flash Memory


    Original     		PDF DSM2180F3 ADSP-218X PQFP52 an1171 adsp 2186 instruction set transistor 13003 AD11 AD12 AD14 DSM2180F3 PLCC52 PQFP52

    CHN 510

    Abstract: CHN 530 vdf displays an1171 PQFP52 PLD 5 AD11 AD12 AD14 ADSP-218X
    Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP 128K Byte Flash Memory


    Original     		PDF DSM2180F3V ADSP-218X PQFP52 CHN 510 CHN 530 vdf displays an1171 PQFP52 PLD 5 AD11 AD12 AD14

    Untitled

    Abstract: No abstract text available
    Text: DSM2180F3 DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (5 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s) r


    Original     		PDF DSM2180F3 ADSP-218X PQFP52

    k941

    Abstract: k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter
    Text: ISSP/150 nm ASIC Technology ISSP1 - Standard Family Product Letter Description NEC‘s Instant Silicon Solution Platform ISSP is an ASIC architecture, that offers high system performance – up to 150 MHz system frequency and up to 250 MHz for local areas – in 0.13 µm (drawn) gate length technology at low NRE. ISSP


    Original     		PDF ISSP/150 lines5030 A16448EE5V0PL00 k941 k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter

    h13f

    Abstract: AN1153
    Text: DSM2180F3V DSM Digital Signal Processor System Memory for analog devices ADSP-218X family (3.3 V supply) NOT FOR NEW DESIGN FEATURES SUMMARY • Glueless Connection to DSP Figure 1. Packages – Easily add memory, logic, and I/O to DSP ) s ( t c u d o s)


    Original     		PDF DSM2180F3V ADSP-218X PQFP52 h13f AN1153

    TSMC 40nm

    Abstract: TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds
    Text: Process-Design Co-Optimization for FPGA Qi Xiang Altera Corporation, 101 Innovation Drive, San Jose, CA 95134 Email: qxiang@altera.com Abstract Advancing field programmable gate array FPGA technology can be very challenging. Some of the major difficulties are power management and high-speed


    Original     		PDF 40-nm TSMC 40nm TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds

    scr C35

    Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
    Text: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control


    Original     		PDF 2N681-2N692 MIL-PRF-19500/108 scr C35 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684

    M4200

    Abstract: No abstract text available
    Text: WESTCODE SEMICONDUCTORS !“ Capsule Phase Control Thyristor Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, and features an amplifying gate. Available in industry standard and thin housings. Ratings ^DRM v DSM


    OCR Scan     		PDF 300mm 0GG272b N320/4 M4200

    Untitled

    Abstract: No abstract text available
    Text: r1 MCD40 Thyristor/Diode Module TRMS — •TAVM V RRM — 2x 60 A 2x 38 A 1200-1600 V Preliminary data V RSM V DSM V RRM V DRM V V 1300 1700 1200 1600 / Type A/K G K II SOT-227 B, miniBLOC r I I MCD 40-12io6 MCD 40-16io6 A/K K = Cathode, A = Anode, G = Gate,


    OCR Scan     		PDF MCD40 OT-227 40-12io6 40-16io6

    tv lg

    Abstract: ko 247
    Text: DIXYS Phase Control Thyristor CS 45 ITRM S = 75 A TAVM = 48 A V RRM = 800 -1600 V Advanced Data V RSM V DSM V ’ RRM V v DRM V V TO-247 AD Type A° - ^ G 900 1300 1700 800 1200 1600 CS 45-08io1 CS 45-12io1 CS 45-16io1 TAB C = Cathode, A = Anode, G = Gate


    OCR Scan     		PDF O-247 45-08io1 45-12io1 45-16io1 tv lg ko 247

    CS458

    Abstract: No abstract text available
    Text: aixYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type Ao ( ^ l ) o C G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol


    OCR Scan     		PDF O-247 45-08io1 45-12io1 45-16io1 CS458

    M/LT 2146

    Abstract: rsm ah 16
    Text: OIXYS CS 45 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V T RMS 75 A T(AV)M 48 A TO-247 AD Type A O -^ T ‘ G 800 1200 1600 900 1300 1700 8 0 0 -1600 V CS 45-08io1 CS 45-12io1 CS 45-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions


    OCR Scan     		PDF O-247 45-08io1 45-12io1 45-16io1 M/LT 2146 rsm ah 16

    Untitled

    Abstract: No abstract text available
    Text: a ix Y S CS 30 v RRM IT RMS Phase Control Thyristor T(AV)M V RSM V RRM V DSM V DRM V V 1200 1400 1600 1200 1400 1600 12 0 0 -1600 V 49 A 31 A TO-247 AD Type CS 30-12io1 CS 30-14io1 CS 30-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings Symbol


    OCR Scan     		PDF O-247 30-12io1 30-14io1 30-16io1

    pixy

    Abstract: No abstract text available
    Text: aixY S CS 20 v RRM Phase Control Thyristor V RSM V RRM V DSM V DRM V V 1200 1400 1600 12 0 0 -1600 V T RMS 30 A T(AV)M 19 A TO-247 AD Type Ao ( ^ l ) o C G 1200 1400 1600 CS 20-12io1 CS 20-14io1 CS 20-16io1 C = Cathode, A = Anode, G = Gate TAB = Anode Maximum Ratings


    OCR Scan     		PDF O-247 20-12io1 20-14io1 20-16io1 O-247 pixy

    Untitled

    Abstract: No abstract text available
    Text: W FLESSE Y Semiconductors. ZN451 3'k DIGIT DVM 1C WITH EXTERNAL AUTO-ZERO The ZN451 is a complete digital voltmeter fabricated on a monolithic chip. A novel charge-balancing conversion technique ensures good linearity. The auto-zero function is completely digital in operation, thus obviating the need for a


    OCR Scan     		PDF ZN451 ZN451 999mV ZN451E ZN451CJ

    Untitled

    Abstract: No abstract text available
    Text: REVISION E DSM-VT-X-XX-P Q SHELL SIZE/PDSITIDN -E-09 2 .7 7 + 0 .1 5 O O O D \ MOUNTING LACE -Rj! #4-40 Removable Jack Screws JS-03 Requires -TB or -BL -MJl Metric M3 Jack Screw (JS-04 for use with -MB anal -ML) Leave Blank Lor NO MOUNTING LACE OPTION


    OCR Scan     		PDF -E-09 JS-03 JS-04 TB-01-4. BL-01-6. TB-02-4,

    BTW56

    Abstract: BTW55 BTW53 3087 BTW52 BTW54 32917B
    Text: ITT Semiconductors Thyristors Thyristors 5 Am p- -B T W Range PN PN Type R EFER EN CE T A B L E Outline Drawing No. Code V R WM V rsm V dWM VoSM Stock No. BTW 52 BTW 53 BTW 54 BTW 55 B TW 56 60 100 200 400 600 60 110 220 440 660 60 100 200 400 600 80 120


    OCR Scan     		PDF BTW52 32917B BTW53 32918X BTW54 32919R BTW55 2920A BTW56 32921X 3087

    ior e78996

    Abstract: IR E78996
    Text: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.


    OCR Scan     		PDF E27104 IRFK4H150 IRFK4J150 E78996. T0-240 ior e78996 IR E78996

    TF561S

    Abstract: TF541S
    Text: THYRISTORS Electrical Characteristics Absolute M axim um Ratings Repetitive Peak Non-Repetitive Off-State Peak Off-State Voltage Voltage T ,= -40°C to T „ s Rgk= 1k£î Mean On-State Current Surge On-State Current 50Hz Half-Cycle N on-Repetitive 50Hz Sinewave


    OCR Scan     		PDF TF321S TF341S TF361S TF521S TF541S TF561S TF821S TF841S TF541S-A 102-C) TF541S

    d3000 mosfet

    Abstract: analogue ohmmeter circuit diagram ZN490 transistor d3000 d3000 TL091 ZN451 ZN451E d3000 fet ZN451CJ
    Text: ZN451E ZN451CJ 3% digit DVM 1C with external auto-zero FEATURES DESCRIPTION • External circuits may be included in the auto-zero loop • Full-scale reading '1.999mV or lower • Measures sum or difference of two inputs • Digital auto-zero with guaranteed zero


    OCR Scan     		PDF ZN451E ZN451CJ 999mV ZN451 ZN451E ZN451CJ d3000 mosfet analogue ohmmeter circuit diagram ZN490 transistor d3000 d3000 TL091 d3000 fet