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    A 107 TRANSISTOR Search Results

    A 107 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    A 107 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N2221AUB/TR

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    Microchip Technology Inc JANSR2N2920U

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    Microchip Technology Inc 2N2907AL

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    Microchip Technology Inc JANTXV2N2221A

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    Microchip Technology Inc JANTXV2N2906AL

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    Find more A 107 TRANSISTOR price and stock on Findchips.com

    A 107 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RG-107 diode

    Abstract: marking BS Q67000-S078
    Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information


    Original     		PDF Q67000-S078 E6288 RG-107 diode marking BS Q67000-S078

    Q67000-S078

    Abstract: BS 107
    Text: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information


    Original     		PDF Q67000-S078 E6288 Q67000-S078 BS 107

    22 J1J

    Abstract: No abstract text available
    Text: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    Original     		PDF SSW-107 SSW-107 500MHz 22 J1J

    Ethernet to fiber optic converter circuit

    Abstract: KS8995X KS8995M Media Converter Q12N2222 fiber optic module HFBR-5103 100BASE-FX HFBR-5903 KS8995M txm decoder
    Text: Application Note 107 Micrel Application Note 107 Fiber Mode Connections KS8995M/X Interfacing the KS8995M/X with a 3.3V Fiber Optic Module General Description The KS8995M and KS8995X offer 100BASE-FX operation on two ports, which allows 100Mbps Ethernet to be transferred over long distances up to 2km using fiberoptic cables.


    Original     		PDF KS8995M/X KS8995M/X KS8995M KS8995X 100BASE-FX 100Mbps Ethernet to fiber optic converter circuit KS8995M Media Converter Q12N2222 fiber optic module HFBR-5103 HFBR-5903 txm decoder

    TIP107

    Abstract: TIP102 of transistors npn pnp
    Text: TIP102, 107 Power Darlington Transistors Features: • NPN and PNP Plastic Power Darlington Transistors for Linear and Switching Applications. • TIP102 type NPN. • TIP107 type PNP. TO-220 Plastic Package Pin Configuration Dimensions Minimum Maximum A 14.42


    Original     		PDF TIP102, TIP102 TIP107 O-220 of transistors npn pnp

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS on 1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) P-channel RDS(on)1 = 115 m


    Original     		PDF KPA1793

    A1E transistor

    Abstract: No abstract text available
    Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107


    OCR Scan     		PDF Q67000-S078 E6288 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A1E transistor

    BS107

    Abstract: No abstract text available
    Text: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 S Type BS 107 ^DS 200 V Type BS 107 Ordering Code Q67000-S078 lD 0.13 A ffDS(on) 26 Q Pin 3 D G Package Marking TO-92 BS 107


    OCR Scan     		PDF Q67000-S078 E6288 BS107

    MARKING BS

    Abstract: BS107
    Text: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V 3 VPT05 158 Pin 1 Pin 2 S Type b BS 107 Vds 200 V Type BS 107 BS 107 Ordering Code Q67000-S060 Q67000-S078 0.13 A Pin 3 D G ^DS(on) Package


    OCR Scan     		PDF VPT05 Q67000-S060 Q67000-S078 E6288 MARKING BS BS107

    equivalent schematic of LM107

    Abstract: LM307N A 107 transistor LM101 LM101A LM107 LM107F LM107H LM107J-14 LM307
    Text: DOTÜ^IOIL LM 107, LM 307 O perational A m plifiers FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA maximum over temperature (107) Offset current 20 nA maxim um over temperature (107) Guaranteed drift characteristics


    OCR Scan     		PDF LM107, LM307 LM101. LM101A 150CC. equivalent schematic of LM107 LM307N A 107 transistor LM101 LM107 LM107F LM107H LM107J-14

    2N9303

    Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
    Text: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2


    OCR Scan     		PDF 300mW 200mW V/10uA) 10mA/0 2N9303 2N24832 2N24843 cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc

    Untitled

    Abstract: No abstract text available
    Text: VCO-107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION The V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat


    OCR Scan     		PDF VCO-107

    Untitled

    Abstract: No abstract text available
    Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    OCR Scan     		PDF SSW-107

    Untitled

    Abstract: No abstract text available
    Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    OCR Scan     		PDF SSW-107 30dBat2GHz 500MHz

    15VPH

    Abstract: I-10K
    Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,


    OCR Scan     		PDF FX-107, FX-207 FX-307 FX-207, FX-307, C-073 15VPH I-10K

    square wave tone generator

    Abstract: FX-207 sequential logic circuit experiments rs 307 FX-107 FX-307 1803 FX FX107
    Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATIOM SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only ’07 SERIES FX-107 GENERAL DESCRIPTION The FX -107, FX-207 and FX-307 are a powerful and flexible family of high performance monolithic signalling devices,


    OCR Scan     		PDF FX-107 FX-107, FX-207 FX-307 FX-207, FX-307, C-073 C-073 FX-307) square wave tone generator sequential logic circuit experiments rs 307 FX-107 1803 FX FX107

    transistor BS 107

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor vDS ^ D S o n BS 107 = 200 V = 0.13 A = 26 Q • N channel • Enhancement mode • Package: T O -9 2 ') Type Ordering code for version on tape Ordering code for version in bulk BS 107 Q67000-S078 Q67000-S060 Maximum Ratings


    OCR Scan     		PDF Q67000-S078 Q67000-S060 transistor BS 107

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


    OCR Scan     		PDF 023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

    Untitled

    Abstract: No abstract text available
    Text: VRL =i437ba4 D G Q I O S Q 3 E'ìE D V A RI -L CO INC T-50-15 V C O -107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION T h e V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-nolse


    OCR Scan     		PDF i437ba4 T-50-15 6061-T6. UNC-38

    photovoltaic module

    Abstract: SCHNEIDER PLC PVA1054 PVA1354 PVA3354 PVAZ172 PVD1054 PVD1354 PVD3354 PVDZ172
    Text: AN-107 Short Circuit Withstand Capability of the Photovoltaic Relay BOSFET is a trademark o f International Rectifier by Stan Schneider Introduction International Rectifier's power 1C, the Bidirectional Output Switch Field Effect Transistor (BOSFET), is designed


    OCR Scan     		PDF AN-107 PVA3354 PVA3354 photovoltaic module SCHNEIDER PLC PVA1054 PVA1354 PVAZ172 PVD1054 PVD1354 PVD3354 PVDZ172

    Tip 107 C

    Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


    OCR Scan     		PDF I05/106/107 TIP100/101/102 TIP107 TIP105/106/107 Tip 107 C transistor tip 107 e 616 E616 IP107 tip 105 tip 107

    transistor B42

    Abstract: AX400 b42 transistor
    Text: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.


    OCR Scan     		PDF b457S25 PH107 T-41-63 transistor B42 AX400 b42 transistor

    A 107 transistor

    Abstract: No abstract text available
    Text: Artmm Coming Attractions m an A M P com pany Avionics Pulsed Power Transistor, 107W, TDM A Format 960 -1215 MHz PH0912-107 Features • • • • • • • • • Designed for JTID S Applications NPN Silicon Microwave Power Transistor Com m on Base Configuration


    OCR Scan     		PDF PH0912-107 1090M 4585m A 107 transistor

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


    OCR Scan     		PDF BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330