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    XN5553 Search Results

    XN5553 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XN5553 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    XN5553 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    XN5553 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    XN5553 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    XN5553 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1149

    Abstract: XN05553 XN5553
    Text: Composite Transistors XN05553 XN5553 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package


    Original     		PDF XN05553 XN5553) 2SD1149 XN05553 XN5553

    2SD1149

    Abstract: XN05553 XN5553
    Text: Composite Transistors XN05553 XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency +0.2 2.8 –0.3 +0.25 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		PDF XN05553 XN5553) 2SD1149 XN05553 XN5553

    2SD1149

    Abstract: XN05553 XN5553
    Text: Composite Transistors XN05553 XN5553 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SD1149 x 2 elements ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C)


    Original     		PDF XN05553 XN5553) 2SD1149 2SD1149 XN05553 XN5553

    2SD1149

    Abstract: XN05553 XN5553
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05553 (XN5553) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number


    Original     		PDF 2002/95/EC) XN05553 XN5553) 2SD1149 XN05553 XN5553

    2SD1149

    Abstract: XN05553 XN5553
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05553 (XN5553) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05


    Original     		PDF 2002/95/EC) XN05553 XN5553) 2SD1149 XN05553 XN5553

    2SD1149

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05553 (XN5553) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number


    Original     		PDF 2002/95/EC) XN05553 XN5553) 2SD1149 2SD1149

    2SD1149

    Abstract: XN5553
    Text: Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency +0.2 2.8 –0.3 +0.25 3 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage Rating Emitter to base voltage


    Original     		PDF XN5553 2SD1149 XN5553

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05553 (XN5553) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des


    Original     		PDF 2002/95/EC) XN05553 XN5553)

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    gn2011

    Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT
    Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? *k iL tm , - is . i f H ■ 43 f t I L * « T A B U S ' < 7 > r -


    OCR Scan     		PDF tiA-Ac37' MA334 MA345 MA551 MA704 MA152WA MA152WK MA153 MA151WA MA151WK gn2011 XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT