Untitled
Abstract: No abstract text available
Text: [ P : R iiy [ lD Î M [ F S Y M X IC M X28F2100B 2M-BIT[256K x 8 /1 2BK x 1 6 CMOS FLASH MEMORY FEATURES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100 nAmaximum standby current Programming and erasing voltage 12V + 7%
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MX28F2100B
144x8/131
072x16
70/90/120ns
16K-Byte
96K-Byte
128K-Byte
DDD1104
MX28F2100BMC-70
MX28F21OOBMC-90
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Untitled
Abstract: No abstract text available
Text: \p M E u m m h M Y IW K IC M X 2 8 F 2 1 OOB 2M -B IT 256K x 8 / 1 28 K x 1 6 CM OS FLASH M EM ORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current
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144x8/131
072x16
70/90/120ns
10OnAmaximum
16K-Byte
96K-Byte
128K-Byte
44-PIN
48-PIN
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block diagram for automatic room power control layout
Abstract: 28F2100B
Text: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%
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OCR Scan
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PDF
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144x8/131
072x16
70/90/120ns
50jas
16K-Byte
96K-Byte
128K-Byte
100mA
X28F2100B
block diagram for automatic room power control layout
28F2100B
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