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    Text: WTC351 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE P b Lead Pb -Free 1 GATE Features: 2 SOURCE * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<60mΩ @VGS=10V RDS(ON)<100mΩ @VGS=4.5V * Rugged and Reliable


    Original     		WTC351 SC-59 300us, 04-Dec-08 SC-59 PDF