WTC2305 Search Results

WTC2305 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
WTC2305		Weitron	P-Channel Enhancement Mode Power MOSFET		Original	PDF
WTC2305A		Weitron	P-Channel Enhancement Mode Power MOSFET		Original	PDF

WTC2305 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SOT-23 marking 352 MOSFET Abstract: WTC2305 MOSFET P-Channel sot-23 DSS SOT23 Text: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <70m Ω@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	PDF	WTC2305 OT-23 OT-23 300us, 05-Jun-09 SOT-23 marking 352 MOSFET WTC2305 MOSFET P-Channel sot-23 DSS SOT23
WTC2305 Abstract: 2305 SOT-23 RD36 Text: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE * “G” Lead Pb -Free -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <53m Ω@V GS =10V Rugged and Reliable	Original	PDF	WTC2305 OT-23 OT-23 16-May-05 WTC2305 2305 SOT-23 RD36
Untitled Abstract: No abstract text available Text: WTC2305A P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 SOURCE 3 Features: 1 2 Super High Dense Cell Design For Low R DS ON R DS(ON) <60m Ω@V GS =-10V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	PDF	WTC2305A SC-59 SC-59 23-May-05 26-Nov-08
2305a Abstract: WTC2305A wtc2305a2305a ID32A Text: WTC2305A P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 SOURCE 3 Features: 1 2 Super High Dense Cell Design For Low R DS ON R DS(ON) <60m Ω@V GS =-10V Rugged and Reliable *Capable of 2.5V Gate Drive	Original	PDF	WTC2305A OT-23 OT-23 23-May-05 2305a WTC2305A wtc2305a2305a ID32A
Untitled Abstract: No abstract text available Text: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <53m Ω@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	PDF	WTC2305 OT-23 OT-23 16-May-05
2305a Abstract: WTC2305A Text: WTC2305A P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.2 AMPERES * “G” Lead Pb -Free DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 SOURCE 3 Features: 1 2 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS =-10V Rugged and Reliable	Original	PDF	WTC2305A OT-23 OT-23 23-May-05 2305a WTC2305A
WTC2305 Abstract: 24AUG ID35A Text: WTC2305DS P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <68m Ω@V GS =-4.5V Rugged and Reliable *Simple Drive Requirement	Original	PDF	WTC2305DS OT-23 OT-23 24-Aug-09 WTC2305 24AUG ID35A
2305 SOT-23 Abstract: WTC2305 2a 13.1 Text: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <53m Ω@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	PDF	WTC2305 OT-23 OT-23 16-May-05 2305 SOT-23 WTC2305 2a 13.1