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Abstract: No abstract text available
Text: WT4410M Surface Mount N-Channel Enhancement Mode MOSFET 8 7 D S 2 6 D 3 S DRAIN SOUCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: DRAIN CURRENT 10 AMPERS D S 1 P b Lead Pb -Free *Super high dense cell design for low RDS(ON) R DS(ON) <11 mΩ @VGS =10V R DS(ON) <15 m Ω@VGS =4.5V
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WT4410M
01-Jul-05
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SDM4410
Abstract: WT4410M
Text: WT4410M Surface Mount N-Channel Enhancement Mode MOSFET 8 7 D S 2 6 D 3 S DRAIN SOUCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: DRAIN CURRENT 10 AMPERS D S 1 P b Lead Pb -Free *Super high dense cell design for low RDS(ON) R DS(ON) <11 mΩ @VGS =10V R DS(ON) <15 m Ω @VGS =4.5V
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Original
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PDF
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WT4410M
01-Jul-05
SDM4410
WT4410M
|
SDM4410
Abstract: WT4410M
Text: WT4410M Surface Mount N-Channel Enhancement Mode MOSFET 8 7 D S 2 10 AMPERES 6 D 3 S DRAIN SOURCE VOLTAGE 5 D 4 G Features: DRAIN CURRENT D S 1 P b Lead Pb -Free 30 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <11 mΩ @VGS =10V R DS(ON) <15 m Ω@VGS =4.5V
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Original
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PDF
|
WT4410M
01-Jul-05
SDM4410
WT4410M
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