Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY* 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES n n n n n n n n n n n High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 21mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive
|
Original
|
PDF
|
WEDPN4M72V-XB2X
4Mx72
125MHz
WEDPN4M72V-XB2X
32MByte
256Mb)
WEDPN4M72V
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
125MHz
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
|
WEDPN4M72V-XBX
Abstract: No abstract text available
Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz,
WEDPN4M72V-XBX
|
WEDPN
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
125MHz*
32MByte
256Mb)
216-bit
100MHz
125MHz
WEDPN
|
DQ75
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz
DQ75
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
|
Original
|
PDF
|
4Mx72
125MHz
WEDPN4M72V-XBX
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
100MHz,
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a
|
Original
|
PDF
|
4Mx72
125MHz
WEDPN4M72V-XB2X
WEDPN4M72V-XB2X
32MByte
256Mb)
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES High Frequency = 100, 125MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing
|
Original
|
PDF
|
4Mx72
125MHz
WEDPN16M64V-XB2X
WEDPN4M72V-XB2X
32MByte
256Mb)
100MHz
WEDPN4M72V
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz
|
WEDPN4M72V-XB2X
Abstract: WEDPN8M72V-XB2X
Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a
|
Original
|
PDF
|
WEDPN4M72V-XB2X
4Mx72
133MHz
32MByte
256Mb)
216-bit
133MHz
WEDPN4M72V-XB2X
WEDPN8M72V-XB2X
|
WEDPN16M64VR-XBX
Abstract: WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN4M64V-XBX WEDPN4M72V-XBX WEDPN8M64VR-XBX WEDPN8M64V-XBX WEDPN8M72VR-XBX WEDPN8M72V-XBX
Text: SDRAM BGA’s Optimum Density and Performance in One Package Designed to complement the PowerPC and other high performance memory controllers. Organization Part Number Package PBGA Dimensions 4M x 64 WEDPN4M64V-XBX 219 PBGA 21mm x 21mm 4M x 72 WEDPN4M72V-XBX
|
Original
|
PDF
|
WEDPN4M64V-XBX
WEDPN4M72V-XBX
WEDPN8M64V-XBX
WEDPN8M72V-XBX
WEDPN8M64Vnd
x64/x72
MIF2023
WEDPN16M64VR-XBX
WEDPN16M64V-XBX
WEDPN16M72VR-XBX
WEDPN16M72V-XBX
WEDPN4M64V-XBX
WEDPN4M72V-XBX
WEDPN8M64VR-XBX
WEDPN8M64V-XBX
WEDPN8M72VR-XBX
WEDPN8M72V-XBX
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
|
Original
|
PDF
|
4Mx72
125MHz
WEDPN4M72V-XBX
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
100MHz,
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
|
Original
|
PDF
|
4Mx72
125MHz
WEDPN4M72V-XBX
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
100MHz,
|
WEDPN4M72V-XB2X
Abstract: WEDPN8M72V-XB2X
Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a
|
Original
|
PDF
|
WEDPN4M72V-XB2X
4Mx72
133MHz
32MByte
256Mb)
216-bit
133MHz
WEDPN4M72V-XB2X
WEDPN8M72V-XB2X
|
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz
|
Sn63
Abstract: A104 A108 A113 WEDPN4M64V-XBX WEDPN4M72V-XB2X
Text: White Electronic Designs WEDPN4M72V-XB2X WEDPN4M64V-XBX PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST Thickness around die = 0.015” to 0.020” typical Burn-In – 100%-48 hours at 125°C The encapsulant is not injection molded to control
|
Original
|
PDF
|
WEDPN4M72V-XB2X
WEDPN4M64V-XBX
Sn63/Pb37
762mm
EIA/JESD22
Sn63
A104
A108
A113
WEDPN4M64V-XBX
WEDPN4M72V-XB2X
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XBX White Electronic Designs 4Mx72 Synchronous DRAM* FEATURES n High Frequency = 100, 125MHz n Package: • The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
32MByte
256Mb)
216-bit
100MHz
100MHz,
125MHz
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
|
Original
|
PDF
|
WEDPN4M72V-XB2X
4Mx72
133MHz
32MByte
256Mb)
216-bit
133MHz
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M72V -XBX WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEA TURES ATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
|
Original
|
PDF
|
WEDPN4M72V
WEDPN4M72V-XBX
4Mx72
125MHz
WEDPN4M72V-XBX
32MByte
256Mb)
100MHz
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
|
Original
|
PDF
|
WEDPN4M72V-XB2X
4Mx72
133MHz
32MByte
256Mb)
216-bit
133MHz
|
WEDPN4M72V-XBX
Abstract: No abstract text available
Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
|
Original
|
PDF
|
WEDPN4M72V-XBX
4Mx72
125MHz
32MByte
256Mb)
216-bit
100MHz
WEDPN4M72V-XBX
|
W3J2256M72-XPBX
Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*
|
Original
|
PDF
|
W3J128M64G-XPBX
W3J128M72G-XPBX
W3J256M72G-XPBX*
W3J2256M72-XPBX*
W3H32M64E-XSBX
W3H32M72E-XSB2X
W3H64M64E-XSBX
W3H64M72E-XSBX
W3H128M72E-XSBX
W3H128M64E-XSBX
W3J2256M72-XPBX
W3J128M64G-XPBX
DDR1 512M
W3J128M72G-XPBX
256mb EEPROM Memory
ddr3 sdram chip 128mb
W3H128M72
w3j128m72
BGA NAND Flash
W72M64VB-XBX
|
Untitled
Abstract: No abstract text available
Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
|
Original
|
PDF
|
WEDPN4M64V-XBX
4Mx64
125MHz
32MByte
256Mb)
216-bit
100MHz
|
Untitled
Abstract: No abstract text available
Text: W332M72V-XBX White Electronic Designs 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a
|
Original
|
PDF
|
W332M72V-XBX
32Mx72
125MHz
256MByte
728-bit
W332M72-ESB
|