Untitled
Abstract: No abstract text available
Text: 5082-0435 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12G Efficiency Min.3.5 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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Power100m
Voltage90
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Untitled
Abstract: No abstract text available
Text: DC4151F01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.50G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A
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DC4151F01
Voltage90
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Untitled
Abstract: No abstract text available
Text: PGG205-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG205-83
Power200m
Voltage90
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Untitled
Abstract: No abstract text available
Text: ESAC75-005 Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current8.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)4.0
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ESAC75-005
Voltage50
Time300n
Voltage900m
StyleTO-66
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Untitled
Abstract: No abstract text available
Text: MUR490E Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current4.0 V(RRM)(V) Rep.Pk.Rev. Voltage900 t(rr) Max.(s) Rev.Rec. Time100n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)3.0
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MUR490E
Voltage900
Time100n
Current25u
Current900u
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: M1159 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.15p‘ C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min.100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)300m Semiconductor MaterialSilicon Package StyleAxial-B
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M1159
Voltage90
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Untitled
Abstract: No abstract text available
Text: PL0561-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.700f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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PL0561-2
Voltage90
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Untitled
Abstract: No abstract text available
Text: SR1512X Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)12
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SR1512X
Current12
Voltage150
Time50n
Voltage900m
Current20u
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Untitled
Abstract: No abstract text available
Text: SB160-09 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current16 @Temp (øC) (Test Condition)94# V(RRM)(V) Rep.Pk.Rev. Voltage90 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)6.0
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SB160-09
Current16
Voltage90
Voltage850m
Current600u
StyleTO-247S
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Untitled
Abstract: No abstract text available
Text: P600M Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)6 @Temp. (øC) (Test Condition)25’
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P600M
Voltage900m
Current25u
Current100u
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Untitled
Abstract: No abstract text available
Text: PL0164-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.6.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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PL0164-2
Voltage90
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Untitled
Abstract: No abstract text available
Text: PL0563-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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PL0563-2
Voltage90
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Untitled
Abstract: No abstract text available
Text: MO1205 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.5.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor Material Package StyleStR-M5 Mounting StyleT
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MO1205
Voltage90
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Untitled
Abstract: No abstract text available
Text: V47ZA05 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage47 V(RMS) Max. Applied Voltage30 V(DC) Max. Applied Voltage38 I(TM) Max.(A) Peak Current100 V(C) Nom. (V) Clamping Voltage90 @I(PP) (A) (Test Condition)2.0 W(TM) Max.(J) Transient Energy400m
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V47ZA05
Voltage47
Voltage30
Voltage38
Current100
Voltage90
Energy400m
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Untitled
Abstract: No abstract text available
Text: 1N3294R+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current100 @Temp (øC) (Test Condition)130Ï V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.6k V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)100
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1N3294R
Current100
Voltage800
Voltage900m
Current13
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Untitled
Abstract: No abstract text available
Text: B380C1500 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.6 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage900 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.45¥ V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)0.9
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B380C1500
Voltage900
Current10u
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Untitled
Abstract: No abstract text available
Text: R4140960 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage900 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.900 V(FM) Max.(V) Forward Voltage1.35 @I(FM) (A) (Test Condition)220 @Temp. (øC) (Test Condition)25õ
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R4140960
Current60
Voltage900
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Untitled
Abstract: No abstract text available
Text: ES3D Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time20n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)3.0
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Voltage200
Time20n
Voltage900m
Current500u
StyleDO-214AB
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Untitled
Abstract: No abstract text available
Text: PRC16S90 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage90 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage790m @I(FM) (A) (Test Condition)5
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PRC16S90
Voltage90
Voltage790m
Current600u
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Untitled
Abstract: No abstract text available
Text: GC1812-30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.8.2p C1/C2 Min. Capacitance Ratio8.5 V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min.600 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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GC1812-30
Voltage90
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Untitled
Abstract: No abstract text available
Text: DVH6791-08 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.8p C1/C2 Min. Capacitance Ratio6.2 V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min.900 f(co) Min. (Hz) Cut-off freq.45G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin
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DVH6791-08
Voltage90
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Untitled
Abstract: No abstract text available
Text: QV9018 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.8p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min.1.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS
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QV9018
Voltage90
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Untitled
Abstract: No abstract text available
Text: 1N3672 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage900 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage2.05 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)
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1N3672
Current12
Voltage900
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Untitled
Abstract: No abstract text available
Text: PL0563B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.40G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B Mounting StyleS
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PL0563B
Voltage90
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