Untitled
Abstract: No abstract text available
Text: PL0543-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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PL0543-2
Voltage45
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Untitled
Abstract: No abstract text available
Text: VAT1102N16 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.6.5p C1/C2 Min. Capacitance Ratio4.75 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B
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VAT1102N16
Voltage45
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Untitled
Abstract: No abstract text available
Text: VATC271C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.9p C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq.100G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleN/A
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VATC271C
Voltage45
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Untitled
Abstract: No abstract text available
Text: MA46619-277 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.3p C1/C2 Min. Capacitance Ratio5.3 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.3.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleChip
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MA46619-277
Voltage45
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Untitled
Abstract: No abstract text available
Text: 2322595.1716 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage275 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy67
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Voltage275
Voltage175
Voltage225
Voltage455
Energy67
Time20n
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Untitled
Abstract: No abstract text available
Text: SNR560KD14 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage56 V(RMS) Max. Applied Voltage35 V(DC) Max. Applied Voltage45 I(TM) Max.(A) Peak Current1.0k V(C) Nom. (V) Clamping Voltage110 @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy10
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SNR560KD14
Voltage56
Voltage35
Voltage45
Voltage110
Energy10
Time15n
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Untitled
Abstract: No abstract text available
Text: SDS60045JECSLU1N Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current60 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.955 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)60
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SDS60045JECSLU1N
Current60
Voltage45
Voltage850m
Current20m
Current45m
StyleTO-258AA
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Untitled
Abstract: No abstract text available
Text: DVH3822-05 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip
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DVH3822-05
Voltage45
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Untitled
Abstract: No abstract text available
Text: SM8S42DSU Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current20 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.86 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25
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SM8S42DSU
Current20
Voltage45
Current200u
Current40m
StyleTO-257AB
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Untitled
Abstract: No abstract text available
Text: MZT3329 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage45 @I(Z) (A) (Test Condition)280m Tolerance (%)20 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.4.5 Temp Coef pp/10k Maximum Operating Temp (øC)150õ Package StyleTO-220AC
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MZT3329
Voltage45
pp/10k
StyleTO-220AC
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Untitled
Abstract: No abstract text available
Text: V175LA10A Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage270 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy55
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V175LA10A
Voltage270
Voltage175
Voltage225
Voltage455
Energy55
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Untitled
Abstract: No abstract text available
Text: MA46618-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio5.1 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.3.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E
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MA46618-186
Voltage45
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Untitled
Abstract: No abstract text available
Text: MA45245-287 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap. C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.1.7k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor Material Package StyleTO-236 Mounting StyleS
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MA45245-287
Voltage45
StyleTO-236
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Untitled
Abstract: No abstract text available
Text: MSP545 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)121’ V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300¥ V(FM) Max.(V) Forward Voltage520mÆ @I(FM) (A) (Test Condition)5.0
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MSP545
Voltage45
Voltage520mÃ
StyleDO-201AD
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Untitled
Abstract: No abstract text available
Text: SEN1152-2 Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current100 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.750 V(FM) Max.(V) Forward Voltage750m @I(FM) (A) (Test Condition)100 @Temp. (øC) (Test Condition)25
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SEN1152-2
Current100
Voltage45
Voltage750m
Current150m
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Untitled
Abstract: No abstract text available
Text: SDS75045JABZND1N Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current75 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.955 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)75
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SDS75045JABZND1N
Current75
Voltage45
Voltage850m
Current20m
Current45m
StyleTO-259var
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Untitled
Abstract: No abstract text available
Text: V175LC5 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage270 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current2.5k V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)25 W(TM) Max.(J) Transient Energy30
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V175LC5
Voltage270
Voltage175
Voltage225
Voltage455
Energy30
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Untitled
Abstract: No abstract text available
Text: MA4K026-935 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.225 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleAxial-16
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MA4K026-935
Voltage45
StyleAxial-16
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Untitled
Abstract: No abstract text available
Text: SDS60045JABZND1N Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.955 V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)60
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SDS60045JABZND1N
Current60
Voltage45
Voltage850m
Current20m
Current45m
StyleTO-259var
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Untitled
Abstract: No abstract text available
Text: VAT272BN18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.4.1p C1/C2 Min. Capacitance Ratio4.9 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.1.9k f(co) Min. (Hz) Cut-off freq.95G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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VAT272BN18
Voltage45
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Untitled
Abstract: No abstract text available
Text: SDS18045JEBLED1N Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current18 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.380 V(FM) Max.(V) Forward Voltage650m @I(FM) (A) (Test Condition)18
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SDS18045JEBLED1N
Current18
Voltage45
Voltage650m
Current40m
StyleTO-259AA
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Untitled
Abstract: No abstract text available
Text: PL0142-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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PL0142-2
Voltage45
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Untitled
Abstract: No abstract text available
Text: GC51407-85 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.4p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.340 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-B Mounting StyleS
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GC51407-85
Voltage45
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Untitled
Abstract: No abstract text available
Text: SDS18045JEAMSU1N Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current18 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.380 V(FM) Max.(V) Forward Voltage650m @I(FM) (A) (Test Condition)18 @Temp. (øC) (Test Condition)25õ
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SDS18045JEAMSU1N
Current18
Voltage45
Voltage650m
Current40m
StyleTO-258var
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