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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VSAC14DK121 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage121 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage100 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage200 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy20


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    VSAC14DK121 Voltage121 Voltage75 Voltage100 Voltage200 Energy20 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBJ75CA Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage87.7 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage75 I(PPM) Max.(A)Pk.Pulse Current4.9


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    SMBJ75CA Voltage87 Voltage75 Voltage121 StyleDO-214AA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SMB75CAT3 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage75 I(PPM) Max.(A)Pk.Pulse Current4.9


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    1SMB75CAT3 Voltage75 Voltage121 StyleDO-214var PDF

    Untitled

    Abstract: No abstract text available
    Text: BZW50-68B Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage84 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage68 I(PPM) Max.(A)Pk.Pulse Current41


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    BZW50-68B Voltage84 Voltage68 Current41 Voltage121 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMCJ75CA Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage87.7 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage75 I(PPM) Max.(A)Pk.Pulse Current12.4


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    SMCJ75CA Voltage87 Voltage75 Current12 Voltage121 StyleDO-214AB PDF

    Untitled

    Abstract: No abstract text available
    Text: 724 BU R R -BR O W N * E * 1 QUAD ISOLATED D C /D C CONVERTER FEATURES A P P L IC A T IO N S • QUAD ISOLATED +8V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE. 3000V TEST • INDUSTRIAL PROCESS CONTROL • LOW LEAKAGE CURRENT. < I| A AT 240V/60HZ


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    40V/60HZ 800kHz 1111balance PDF

    ku 602 vc

    Abstract: No abstract text available
    Text: B U R R —B R O U J N B U CORP R R H E - B R O W D |l7 3 1 3 b S 0D14ûfc.5 ô I OPA121 N 1 Low Cost Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 6 n V /V H z typ at 10kHz • OPTOELECTRONICS • LOW BIAS CURRENT: 5pA max • DATA ACQUISITION


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    OPA121 10kHz 0PEN-L00P OPA121 AD547 ku 602 vc PDF

    PR3000A

    Abstract: MIPS R3000A
    Text: PIPER” ÂPW ÂM CE Ö 1N IF @ 1M /Ä T B Ü [M ! FEATURES: • Highly Integrated single-chip RISC processor that contains the following: - CPU PR3000A based - FPA (PR3010A based) - Write/Read Buffer - Instruction and Data Caches - 32-bit Counters/Timers


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    PR3000A PR3010A 32-bit 64entry 64-blt 160-pin MIPS R3000A PDF

    SY100E111U

    Abstract: sk a 3050 c ay 950
    Text: 5V/3.3V 1:9 D I F F E R E N T I A L Ï.Y10E1 SYNERGY C L O C K D R I V ER w/ o E N A B L E S E M IC O N D U C T O R 11A/ L • ; y i o o E i 11 a /l D E S C R IP T IO N FEATURES ■ 3 .3 V an d 5V p o w e r s u p p ly o p tio n s ■ 2 0 0 p s p a rt-to -p a rt sk ew


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    Y10E1 10/100E SY10E111AJI SY10E111 SY100E111AJ! SY100E111 J28-1 SY100E111U sk a 3050 c ay 950 PDF

    4556 ad

    Abstract: MS6399-45FC
    Text: MOSEL MS6399 PRELIMINARY 32K x 8 SRAM with an Address and Data Multiplexer FEATURES DESCRIPTION • Supports direct interface to high-speed m icro­ controllers • On-chip transparent address latches • 45/70/100 ns access tim es available support high­


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    MS6399 MS6399 PID046 MS6399-45FC S28-2 MS6399-70FC MS6399-100FC PID046 4556 ad PDF

    MS6264AL-45PC

    Abstract: M56264 MS6264AL-45NC
    Text: MOSEL MS6264A 8K x 8 High Speed CMOS Static RAM FEATURES DESCRIPTION • High speed - 4 5 /5 5 ns M ax. T h e M O S E L M S 6 2 6 4 A is a high perform ance, low power C M O S static R A M organized as 8 1 9 2 words by 8 bits. Th e device supports easy m em ory expansion with both an


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    MS6264A MS6264AL-45NC MS6264AL-45PC MS6264AL-45SC MS6264AL-55NC MS6264AL-55PC MS6264AL-55SC P28-2 P28-1 S28-1 M56264 PDF

    S-8812

    Abstract: S8812B
    Text: MOSEL / _ M S 8 8 1 2 8 / 128K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • Compatible with JEDEC standard pinout for monolithic megabit 128K x 8 The Mosel MS88120 is a 1 Megabit 1,048,576 bits static random access memory module organized as 128K


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    250mW MS88120 MS88128 PID023 MS88128 MSB8128-10PC MSB8128-12PC S-8812 S8812B PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times - 25/35ns (Commercial)


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    P4C163/P4C163L 25/35ns 25/35/45ns P4C163L P4C163L 28-Pin SMD-5962-88683 P4C163/L PDF

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR 20E D • 7 0 b 2 5 ci? 0 0 0 0 5 7 = } 7 P4C168/P4C168L, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Three Options - P4C168/L Low Power Standby Mode - P4C169 Fast Chip Select Control - P4C170 Fast Chip Select, Output Enable


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    P4C168/P4C168L, P4C169, P4C170 P4C168/L P4C169 P4C170 P4C168 P4C168L Stan4C169 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES • Full C M O S, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -1 0 /1 2 /1 5 /2 0 /2 5 ns (C om m ercial) Fully TTL Com patible Inputs and O utputs Produced w ith PACE II Technology


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    P4C150 24-Pin P4C150 096-bit -10PC -10SC -12PC -12DC PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Output Enable Control Function ■ High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial) -15/20/25/35 ns (Military)


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    P4C116 24-Pin 28-Pin 384-bit -12PC -12SC -12JC -15PC PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Low Power operation (Commercial) - 715 mW Active -10/12 - 550 mW Active - 15/20/25


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    P4C148, P4C149 P4C148 P4C148 -P4C149 18-Pin 096-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: E M M OPA121 ' Ií Tm^ J I í B U R R - BROW N« I Low Cost Precision ÆJffet OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • LO W NOISE: 6 n V / V H z typ at 10kHz • O P TO ELEC TR O N IC S • LOW BIAS C U RR EN T: 5pA max • DATA ACQUISITION • LO W O F F S ET : 2mV max


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    OPA121 10kHz OPA12I PDF

    Untitled

    Abstract: No abstract text available
    Text: SYNERGY 3. 3V DU AL T T L - t o - D I F F E R E N T I A L PECLTRANSLATOR SY 10 E L T 22 L SY100ELT22L S E M IC O N D U C T O R DESCRIPTION FEATURES 300ps typical propagation delay T he S Y 1 0 /1 0 0 E L T 2 2 L a re d u a l T T L -to -d iffe re n tia l PECL tran sla to rs with +3.3V pow er supply. Because


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    SY100ELT22L 300ps 100ps 10/100ELT22L SY10ELT22LZC SY10ELT22LZCTR SY100ELT22LZC SY100ELT22LZCTR PDF

    GE 2L

    Abstract: sk 3050 c SK 3050 J
    Text: * SYNERGY 5V /3.3V 1 :9 D IF F E R E N T IA L Clockworks c l o c k d r i v e r w / o e n a b l e s y io o e ! !!^ S E M IC O N D U C T O R FEATURES DESCRIPTION • 3.3 V a n d 5 V p o w e r s u p p ly o p tio n s ■ 2 0 0 p s p a rt-to -p a rt sk ew


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    SY10/' rf28-1 11LJC 11LJCTR 111LJI 11LJI J28-1 GE 2L sk 3050 c SK 3050 J PDF

    u3844

    Abstract: 166Q P4C168 P4C169 P4C170
    Text: PERFORMANCE SEMICONDUCTOR SOE D • TObeS^? ÜD01fl2fl Qfl3 « P S C P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Three Options - P4C168 Low Power Standby Mode - P4C169 Fast Chip Select Control - P4C170 Fast Chip Select, Output Enable


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    D01fl2fl P4C168, P4C169, P4C170 -12/15/20/25ns P4C168 P4C168 P4C169 u3844 166Q PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 3553 7 ^ CYPRESS P R E L IM IN A R Y C Y 2 3 1 0 A N Z 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs Features Functional Description One input to 10 output buffer/driver Supports up to four SDRAM SO-DIM Ms Two additional outputs for feedback l2C interface for output control


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    CY2310ANZ PDF

    ku 602 vc

    Abstract: ftl2k
    Text: b ur r - broüin corp 34E » 17313b5 DOlfilflB 5 H BUB 7 =-79-/S“ OPA404 B U R R -B R O W N • *= * ■ = * ! Quad High-Speed Precision Difet®OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • WIDE BANDWIDTH: 6.4MHz


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    17313b5 -79-/S" OPA404 OPA404 17313bS ku 602 vc ftl2k PDF