VTP7210
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7210 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These
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VTP7210
VTP7210
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VTP7210
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7210 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These
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VTP7210
VTP7210
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VTP7210H
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7210H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These
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VTP7210H
VTP7210H
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP7210H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These
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VTP7210H
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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Untitled
Abstract: No abstract text available
Text: VTP7210 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .055 (1.40) •70 (17.5) .045 (1.14) .028 (0.71) MAX. .180 (4.57) T~ .170 (4.32) (2.54) ANODE .04 (1.02) NOM. .065 (1.65) ■235 (5.97) .225 (5.72) .055 (K40)' - . 1 6 5 (4.20) NOM. .022 (0.56) .030 (0.76) SR
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VTP7210
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S 76 infrared
Abstract: VTP7210
Text: VTP Process Photodiodes VTP7210 PACKAGE DIMENSIONS inch mm .70 (17.6) AN O D E .04 (1.02) NOM. - . 1 6 5 (4.20) NOM. .225 (5.72) .022 (0.56) .018 (0.46)' .030 (0.76) SR •038 (0.97) .033 r0.84l PRODUCT DESCRIPTION TZ GR AY COLOR CODE CASE 7 Small area planar silicon photodiode
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VTP7210
in210
VTP721
6313z
3030bQT
S 76 infrared
VTP7210
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