Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection
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VTP1232
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nf 0036 diode
Abstract: VTP1232H sr100 SR 100 NF1100
Text: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection
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VTP1232H
nf 0036 diode
VTP1232H
sr100
SR 100
NF1100
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VTP1232F
Abstract: No abstract text available
Text: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range
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VTP1232F
VTP1232F
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Untitled
Abstract: No abstract text available
Text: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range
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VTP1232F
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Untitled
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection
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VTP1232H
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VTP1232
Abstract: OPTO-52
Text: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection
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VTP1232
VTP1232
OPTO-52
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTP8651
Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).
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VTP100
VTP8651
VTP1112
VTP4085
VTP1188S
VTP11188S
VTP1232
silicon photodiode array
VTP1012
VTP7840
VTP100
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Photodiode vactec
Abstract: EG*G Vactec VTP1232
Text: VTP1232 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm 2 4 0 ( 6 .1 0 ) M IN IM U M .05-0 ( t . 2 7 ) , .030 (0 .7 6 ) .2 2 0 (5 .5 9 ) . 3 4 (8 . 6 ) .1 7 (4 . 3 ) ^<t£)nom- .026 (0 .6 6 ) [.0 1 7 .2 0 0 ( 5 . 0 8 ) .1 8 0 ( 4 . 5 7 ) c JL (0 .4 3 )
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VTP1232
Photodiode vactec
EG*G Vactec
VTP1232
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Untitled
Abstract: No abstract text available
Text: VTP1232 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm MINIMUM , .34 (8.6) .17 (4.3) .050 (1 .27 ) .030 (0.76 ) 240 (6 .10 ) .220 (5 .59 ) k — ~ ^ -N O M . (1 .52 ) .026 (0 .66 ) [ . 0 1 7 (0 .4 3 ) JL .200 (5 .08 ) .180 (4 .57 ) Also available in infrared transmitting/
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VTP1232
3D30bDc
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