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    VTP12 Price and Stock

    Excelitas Technologies Corporation VTP1232H

    SENSOR PHOTODIODE 920NM RADIAL
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    DigiKey VTP1232H Bulk 250
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    ComSIT USA VTP1232H 10,000
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    Bel Fuse 5VTP 1.25-R

    FUSE GLASS 1.25A 250VAC 5X20MM
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    Excelitas Technologies Corporation VTP1232FH

    Photo Diode; No. Of Pins:2Pins; Diode Case Style:T-1 3/4 (5Mm); Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:70°; Dark Current:0.025Μa; Operating Temperature Min:-40°C; Operating Temperature Max:100°C; Msl:- Rohs Compliant: Yes |Excelitas Tech VTP1232FH
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    Newark VTP1232FH Bulk 50 1
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    Excelitas Technologies Corporation VTP1232-2AH

    Photo Diode; Peak Reflow Compatible (260 C):Yes Rohs Compliant: Yes |Excelitas Tech VTP1232-2AH
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    Excelitas Technologies Corporation VTP1232-2A

    Photodiode Rohs Compliant: No |Excelitas Tech VTP1232-2A
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    VTP12 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTP1220FB PerkinElmer Optoelectronics IR Blocking Silicon Photodiode Original PDF
    VTP1232 PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP1232 EG&G Vactec VTP Process Photodiodes Scan PDF
    VTP1232H Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE FASTRESP T1 3/4 Original PDF
    VTP1250 EG&G FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes Scan PDF
    VTP1250 EG&G Vactec VTP Process Photodiodes Scan PDF
    VTP1250S EG&G FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes Scan PDF
    VTP1250S EG&G Vactec VTP Process Photodiodes Scan PDF

    VTP12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTP1220FBH

    Abstract: No abstract text available
    Text: D A T A S H E E T O Preliminary Data Sheet VTP1220FBH IR Blocking Silicon Photodiode Description This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3⁄4 flat end-looking package. These diodes contain an integral IR rejection filter, offering good


    Original     		PDF VTP1220FBH VTP1220FBH

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original     		PDF VTP1232

    nf 0036 diode

    Abstract: VTP1232H sr100 SR 100 NF1100
    Text: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original     		PDF VTP1232H nf 0036 diode VTP1232H sr100 SR 100 NF1100

    VTP1232F

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range


    Original     		PDF VTP1232F VTP1232F

    IR photodiode

    Abstract: VTP1220FBH IR block photodiode photodiode eyes response photodiode eyes response application Silicon Photocells silicon photodiode silicon photodiode human eye Ir blocking filter
    Text: D A T A S H E E T Optoelectronics Preliminary Data Sheet VTP1220FBH IR Blocking Silicon Photodiode Description Featur es This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3⁄4 flat end-looking package. These diodes contain an integral IR rejection filter, offering good


    Original     		PDF VTP1220FBH IR photodiode VTP1220FBH IR block photodiode photodiode eyes response photodiode eyes response application Silicon Photocells silicon photodiode silicon photodiode human eye Ir blocking filter

    IR photodiode

    Abstract: Silicon Photocells perkin VTP1220FB silicon photodiode silicon photocell 100-FC silicon photodiode human eye
    Text: D A T A S H E E T Optoelectronics Preliminary Data Sheet VTP1220FB IR Blocking Silicon Photodiode Description Featur es This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3⁄4 flat end-looking package. These diodes contain an integral IR rejection filter, offering good


    Original     		PDF VTP1220FB IR photodiode Silicon Photocells perkin VTP1220FB silicon photodiode silicon photocell 100-FC silicon photodiode human eye

    Untitled

    Abstract: No abstract text available
    Text: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range


    Original     		PDF VTP1232F

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original     		PDF VTP1232H

    VTP1232

    Abstract: OPTO-52
    Text: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection


    Original     		PDF VTP1232 VTP1232 OPTO-52

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    269EG

    Abstract: UR620
    Text: OFF-LINE SWITCH MODE TRANSFORMERS Indicated Parts are UL1950 & CSA-950 Recognized under UL File# E162344 * Designed for Use with Power Integrations IC's. * Designed to Meet UL1950/IEC950 Safety Standards. * Design Engineering Support Available. * Multiple Configurations.


    Original     		PDF UL1950 CSA-950 E162344 UL1950/IEC950 OP266VG PMCU4100 PMCU-40009 PMCU-4330 PMCE-0330 269EG UR620

    UR620

    Abstract: TOP259EN 257EN PMCE-0330
    Text: OFF-LINE SWITCH MODE TRANSFORMERS Indicated Parts are UL1950 & CSA-950 Recognized under UL File# E162344 * Designed for Use with Power Integrations IC's. * Designed to Meet UL1950/IEC950 Safety Standards. * Design Engineering Support Available. * Multiple Configurations.


    Original     		PDF UL1950 CSA-950 E162344 UL1950/IEC950 Integr330 PMCE-0330 UR620 TOP259EN 257EN PMCE-0330

    BSW17

    Abstract: VCO Og VTP120 TA1267AF TP10 TP20 VR13 VTP122
    Text: TA1267AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1267AF MULTISTANDARD PIF / SIF SYNCHRONOUS DEMODULATOR IC FEATURES PIF CIRCUIT • True synchronous PIF demodulator • 3-stages gain controlled PIF amplifier • High speed response PIF AGC detector


    Original     		PDF TA1267AF 000707EBA1 VTP121 VTP120 VTP121 VTP122 VTP123 VTP122 VTP123 BSW17 VCO Og VTP120 TA1267AF TP10 TP20 VR13

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


    Original     		PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    100K VARIABLE RESISTOR

    Abstract: BLM21A102SPT TAJC106M016 c38 transistor
    Text: 19-1420; Rev 1; 6/00 MAX3867 Evaluation Kit Features ♦ Fully Assembled and Tested The EV kit is composed of two independent sections on the PC board. The output of the electrical evaluation section is interfaced to an SMA connector, which can be connected to a 50Ω terminated oscilloscope. The


    Original     		PDF MAX3867 MAX3867. MAX3867 MAX3867EVKIT 100K VARIABLE RESISTOR BLM21A102SPT TAJC106M016 c38 transistor

    philips sub woofer circuit diagram

    Abstract: TA1304F toshiba v16s sub woofer circuit diagram woofer ct GLPF100 GLPF125 GLPF170 GLPF210 TA1304N
    Text: TA1304F/N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1304F,TA1304N TV-SOUND PROCESSOR FEATURES Sound processor l 2 ch inputs L-ch, R-ch l 3 ch outputs (L-ch, R-ch, W-ch) l Volume, balance, treble, bass and woofer level control l Built-in woofer low-pass filter


    Original     		PDF TA1304F/N TA1304F TA1304N SSOP24-P-300-1 SDIP24-P-300-1 000707EBA1 philips sub woofer circuit diagram toshiba v16s sub woofer circuit diagram woofer ct GLPF100 GLPF125 GLPF170 GLPF210 TA1304N

    100K VARIABLE RESISTOR

    Abstract: 503 Variable Resistor variable resistor 104 pin configuration 1K variable resistor DIODE R40 Variable Resistors 503 15K variable resistor maxim TOP MARKING SOT23 MARKING SB6 3296W104-ND
    Text: 19-2363; Rev 0; 4/02 MAX3850 Evaluation Kit Features ♦ Fully Assembled and Tested The EV kit is composed of two independent electrically isolated sections on the PC board. The output of the electrical evaluation section is interfaced to an SMA connector, which can be connected to a 50Ω terminated


    Original     		PDF MAX3850 MAX3850 100K VARIABLE RESISTOR 503 Variable Resistor variable resistor 104 pin configuration 1K variable resistor DIODE R40 Variable Resistors 503 15K variable resistor maxim TOP MARKING SOT23 MARKING SB6 3296W104-ND

    Untitled

    Abstract: No abstract text available
    Text: TA1267AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1267AF MULTISTANDARD PIF / SIF SYNCHRONOUS DEMODULATOR IC FEATURES PIF CIRCUIT Weight: 0.27 g Typ. • True synchronous PIF demodulator · 3-stages gain controlled PIF amplifier · High speed response PIF AGC detector


    Original     		PDF TA1267AF 000707EBA1 VTP122 VTP120 VTP121 VTP121 VTP120

    Photodiode vactec

    Abstract: EG*G Vactec VTP1232
    Text: VTP1232 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm 2 4 0 ( 6 .1 0 ) M IN IM U M .05-0 ( t . 2 7 ) , .030 (0 .7 6 ) .2 2 0 (5 .5 9 ) . 3 4 (8 . 6 ) .1 7 (4 . 3 ) ^<t£)nom- .026 (0 .6 6 ) [.0 1 7 .2 0 0 ( 5 . 0 8 ) .1 8 0 ( 4 . 5 7 ) c JL (0 .4 3 )


    OCR Scan     		PDF VTP1232 Photodiode vactec EG*G Vactec VTP1232

    Untitled

    Abstract: No abstract text available
    Text: VTP1232 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm MINIMUM , .34 (8.6) .17 (4.3) .050 (1 .27 ) .030 (0.76 ) 240 (6 .10 ) .220 (5 .59 ) k — ~ ^ -N O M . (1 .52 ) .026 (0 .66 ) [ . 0 1 7 (0 .4 3 ) JL .200 (5 .08 ) .180 (4 .57 ) Also available in infrared transmitting/


    OCR Scan     		PDF VTP1232 3D30bDc

    Untitled

    Abstract: No abstract text available
    Text: 5bE D 3030 ^0^ GG01070 fi Ï fi HVCT VTP12 50 , 1250S VTP Process Photodiodes E Hit, T-41-51 VACTEC PACKAGE DIMENSIONS inch (mm PRODUCT DESCRIPTION CASE 12 Planar silicon photodiode mounted on a two lead ceramic header. These diodes have a filter incorporated into the pack­


    OCR Scan     		PDF GG01070 VTP12 1250S T-41-51 VTP1250 VTP1250S

    VTP1250

    Abstract: VTP1250S
    Text: T> 5bE WM a GBO büT DDD1D7Q VTP Process Photodiodes E 6 & G ilTb « V C T VTP1250, 1250S VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm .300 (7 .6 2 ) ! ’ UINIUUU T .0 76 (1.9 1) .0 70 (1.7 8) ♦ .3 32 (8 .+3 ) .320 (8 .1 3 ) ( _ „ /I/" I V j „ -


    OCR Scan     		PDF VTP1250, 1250S T-41-51 4x1012 x1012 VTP1250 VTP1250S

    tip ff 0401

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE TA1274F TO SHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 1274 F PIF/SIF SYNCHRONOUS DEMODULATOR IC FEATURES • Com patible pin assignment to TA1267AF PIF CIRCUIT • True synchronous PIF dem odulator • 3-stages gain controlled PIF am plifier


    OCR Scan     		PDF TA1274F TA1267AF 980910EBA1 292GES-7692BS 616DB-1048 TA1274F-19 TA1274F--20 SSOP24-P-300-1 tip ff 0401

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12