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    Excelitas Technologies Corporation VTB9412H

    SENSOR PHOTODIODE 920NM 2DIP MOD
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    Excelitas Technologies Corporation VTB9412BH

    SENSOR PHOTODIODE 580NM 2DIP MOD
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    VTB9412 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB9412 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9412 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9412 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412B PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9412B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9412B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412BH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE UHDKRES 6MM CER IR Original PDF

    VTB9412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTB9412

    Abstract: VTB9413
    Text: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original     		PDF VTB9412, VTB9412 VTB9413 VTB9412 VTB9413

    VTB9412BH

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package


    Original     		PDF VTB9412BH, 9413BH VTB9412BH VTB9413BH VTB9412BH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package


    Original     		PDF VTB9412BH, 9413BH VTB9412BH VTB9413BH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original     		PDF VTB9412H, 9413H VTB9412H VTB9413H

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These


    Original     		PDF VTB9412B, 9413B VTB9412B VTB9413B

    9413H

    Abstract: rsh8
    Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original     		PDF VTB9412H, 9413H VTB9412H VTB9413H 9413H rsh8

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original     		PDF VTB9412, VTB9412 VTB9413

    9413B

    Abstract: VTB9412B VTB9413B
    Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These


    Original     		PDF VTB9412B, 9413B VTB9412B VTB9413B 9413B VTB9412B VTB9413B

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB9412B, 9413B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20F Sm all area planar silicon photodiode in a recessed ceram ic package. The package incorporates an infrared re­ jection filter. These diodes have very high shunt resistance and good blue


    OCR Scan     		PDF VTB9412B, 9413B VTB9412B VTB9413B

    VTB9412

    Abstract: VTB9413 VTB9414 sbe 320 blue
    Text: SbE T> BDBObD^ Q0D1Ü55 G BVCT VTB9412 VTB Process Photodiodes E IflT 8. G V A C T E C T-41-51 P A C K A G E DIMENSIONS inch mm PRO D U CT DESCRIPTION CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Sm all area planar silicon photodiode in a recessed ceram ic package. Th e ch ip


    OCR Scan     		PDF 303DbDÃ Q0D1055 VTB9412 T-41-51 VTB9413 VTB9414 2x1012 x1013 0x1013 VTB9412 VTB9413 VTB9414 sbe 320 blue

    VTB9412B

    Abstract: VTB9413B VTB9414B
    Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in


    OCR Scan     		PDF 3030bDT 0001DS7 VTB9412B, T-41-51 VTB9412B VTB9413B VTB9414B x1013 VTB9412B VTB9413B VTB9414B

    TB505

    Abstract: No abstract text available
    Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have


    OCR Scan     		PDF 365nm, at220nm. VTS2011 VTS20â TB505

    9413B

    Abstract: VTB9413B VTB9412B
    Text: V T B 9 4 1 2 B , 9413B VTB Process Photodiodes I PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared re­


    OCR Scan     		PDF VTB9412B, 9413B VTB9412B 9413B VTB9413B VTB9412B

    Untitled

    Abstract: No abstract text available
    Text: SbE ]> • 3 0 3 0 b 0 T 0001DS7 TSS M V C T V TB 9 4 1 2B , 3B, 4B VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20 F PRODUCT DESCRIPTION Small area planarsilicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec­


    OCR Scan     		PDF 0001DS7 T-41-51 VTB9414B VTB9413B VTB9412B

    5041J

    Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
    Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with


    OCR Scan     		PDF 365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B

    VTB9412

    Abstract: VTB9413
    Text: VTB Process Photodiodes V T B 9 4 1 2, 9413 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes offer very high shunt resistance and good blue


    OCR Scan     		PDF VTB9412, VTB9412 VTB9413 303DbGc1 VTB9412 VTB9413