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    Excelitas Technologies Corporation VTB4051H

    Photo Diode; No. Of Pins:2Pins; Diode Case Style:Radial Leaded; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:60°; Dark Current:250Pa; Operating Temperature Min:-20°C; Operating Temperature Max:75°C; Msl:- Rohs Compliant: Yes |Excelitas Tech VTB4051H
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    VTB4051 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTB4051 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB4051 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB4051 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB4051 EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB4051 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB4051 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high


    Original     		PDF VTB4051

    VTB4051

    Abstract: ceramic photodiode case 13
    Text: VTB Process Photodiodes VTB4051 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high


    Original     		PDF VTB4051 VTB4051 ceramic photodiode case 13

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high


    Original     		PDF VTB4051H

    VTB4051H

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high


    Original     		PDF VTB4051H VTB4051H

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB4051 VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes offer very high shunt resistance and good blue response.


    OCR Scan     		PDF VTB4051 3D30L

    VTB4051

    Abstract: No abstract text available
    Text: VTB4051 VTB Process Photodiodes ¡ PACKAGE DIMENSIONS inch mm CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes offer very high shunt resistance and good blue response.


    OCR Scan     		PDF VTB4051 VTB4051

    VTB4050

    Abstract: VTB4051
    Text: 5bE D aOBQbQS 0 0 0 1 0 3 b S5û « V C T VT B4050, 4051 VTB Process Photodiodes _ E G 8. G V A C T E C PACKAGE D IM EN SIO N S inch mm .305 .067 (1 .7 0 ) (7 .7 S ) CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and


    OCR Scan     		PDF VTB4050, VTB4050 VTB4051 1001c, 9x1012 VTB4050 VTB4051

    4051 application photodiode

    Abstract: VTB4050 VTB4051
    Text: 5bE T> BDBObO'i □ □ □ 1 0 3 b B B S H V C T VTB Process Photodiodes V T B 4 0 5 0 , 4051 _ E G 8. G VACT EC PACKAGE DIMENSIONS inch mm .3 0 5 ( 7 . 7 5 ) CASE 13 PRODUCT DESCRIPTION Isc CHARACTERISTIC Short Circuit Current TCIsc Isc Temp. Coefficient


    OCR Scan     		PDF 00G103b VTB4050, VTB4050 VTB4051 4051 application photodiode VTB4050 VTB4051