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    VRF151E Search Results

    VRF151E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VRF151E Microsemi RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 Original PDF

    VRF151E Datasheets Context Search

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    transformer 0-12v

    Abstract: No abstract text available
    Text: VRF151E G VRF151EMP(G) 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    PDF VRF151E VRF151EMP 175MHz VRF151. M174A 30MHz, 175MHz, SD2931-10 transformer 0-12v

    VK200-4B

    Abstract: 1UF 50V SMT CASE C J101 VRF151 0-12V 2204B SD2931-10 VRF151E SD2931-10W
    Text: VRF151E 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    PDF VRF151E 175MHz VRF151E VRF151. M174A 30MHz, 175MHz, SD2931-10 RoHS96 VK200-4B 1UF 50V SMT CASE C J101 VRF151 0-12V 2204B SD2931-10W

    SD2931-10

    Abstract: VRF151 RF POWER TRANSISTOR 150w 2204B VRF151E VRF151EMP VK200-4B
    Text: VRF151E VRF151EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    PDF VRF151E VRF151EMP 175MHz VRF151E VRF151. M174A 30MHz, 175MHz, SD2931-10 IM096 VRF151 RF POWER TRANSISTOR 150w 2204B VRF151EMP VK200-4B

    Untitled

    Abstract: No abstract text available
    Text: VRF151E VRF151EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    PDF VRF151E VRF151EMP 175MHz VRF151E VRF151. M174A 30MHz, 175MHz, SD2931-10

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter