VQ2004J
Abstract: No abstract text available
Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VQ2004J
P-37655--Rev.
25-Jul-94
VQ2004J
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quad p-CHANNEL
Abstract: VQ2004J
Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VQ2004J
S-04279--Rev.
16-Jul-01
quad p-CHANNEL
VQ2004J
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VP0808L
Abstract: VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5
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VP0808L,
VP1008L
VP0808L
O-226AA)
S-00530--Rev.
03-Apr-00
VP0808L
VP1008L
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VQ2004J
Abstract: No abstract text available
Text: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VQ2004J
P-37655--Rev.
25-Jul-94
VQ2004J
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VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V
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VP0808B/L/M,
VP1008B/L/M
VP0808M
VP1008B
VP0808B
VP0808L
VP1008L
VP1008M
O-226AA)
P-37655--Rev.
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
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VQ2004J
Abstract: No abstract text available
Text: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,
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PDF
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VQ2004J
P-37655--Rev.
25-Jul-94
VQ2004J
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VP0808L
Abstract: VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
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VP0808L,
VP1008L
VP0808L
18-Jul-08
VP0808L
VP1008L
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TO-205AD
Abstract: VP0808M VP1008B TO-237 VP0808B VP0808L VP1008L VP1008M VP100
Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V
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VP0808B/L/M,
VP1008B/L/M
VP0808M
VP1008B
VP0808B
VP0808L
VP1008L
VP1008M
O-226AA)
P-37655--Rev.
TO-205AD
VP0808M
VP1008B
TO-237
VP0808B
VP0808L
VP1008L
VP1008M
VP100
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VP0808L
Abstract: VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
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VP0808L,
VP1008L
VP0808L
08-Apr-05
VP0808L
VP1008L
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VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Text: VP0808B/L/M, VP1008B/L/M Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M -80 -100 1 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = -10 V 5 @ VGS = -10 V 5 @ VGS = -10 V
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VP0808B/L/M,
VP1008B/L/M
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
O226AA)
37655--Rev.
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
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VQ2004J
Abstract: No abstract text available
Text: VQ2004J Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) -60 5 @ VGS = -10 V -2 to -4.5 -0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,
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VQ2004J
37655--Rev.
VQ2004J
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VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VP0808B Siliconix
Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V
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VP0808B/L/M,
VP1008B/L/M
VP0808M
VP1008B
VP0808B
VP0808L
VP1008L
VP1008M
O-226AA)
P-37655--Rev.
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
VP0808B Siliconix
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VQ2004J
Abstract: quad p-CHANNEL
Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,
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VQ2004J
18-Jul-08
VQ2004J
quad p-CHANNEL
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siliconix marking code
Abstract: VP0808L VP1008L
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
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VP0808L,
VP1008L
VP0808L
O-226AA)
S-04279--Rev.
16-Jul-01
siliconix marking code
VP0808L
VP1008L
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n 6113 transistor
Abstract: c 6113 transistor
Text: A153S& VQ2004 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) (n ) (A) PACKAGE VQ2004 -60 5 -0.41 All VQ2006 -90 5 -0.41 All Performance Curves: VPDV10 •d
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VQ2004
VQ2006
A153S&
14-PIN
VPDV10
n 6113 transistor
c 6113 transistor
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Untitled
Abstract: No abstract text available
Text: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =
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YP0808B/L/M,
YP1008B/L/M
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
O-226AA)
P-37655--
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quad p-CHANNEL
Abstract: No abstract text available
Text: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (£2) v GS(th) (V ) b (A) -6 0 5 V QS = - 1 0 V - 2 t o -4 .5 -0.41 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Drivers: Relays, Solenoids, Lamps,
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VQ2004J
VQ2004J
S-04279--
16-Jul-01
quad p-CHANNEL
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b0725
Abstract: No abstract text available
Text: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •
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VQ2004J
P-37655--Rev.
b0725
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VPDS06
Abstract: No abstract text available
Text: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d
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VPDS06
6-204VP1008B)
VPDV10
VPDS06
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vp0808b
Abstract: No abstract text available
Text: Tem ic VP0808B/L/M, VP1008B/L/M_ Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number I d A rBS(on) Max (Q) VGS(th) (V) 5 @ VGS = - 1 0 V - 2 to -4 .5 -0 .8 8 5 @ V GS = - 1 0 V - 2 to -4 .5 -0 .2 8 VP0808M 5 @ V o s = -10 V
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VP0808B/L/M,
VP1008B/L/M_
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
T0-205A
P-37655--Rev.
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VP0808
Abstract: vp0808M
Text: Brsfconj* VP0808 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY BOTTOM VIEW TO-39 TO-205AD PART NUMBER V (BR)DSS r DS(ON) •d (V) (ii) (A) PACKAGE VP0808B -80 5 -0.88 TO-39 VP0808L -80 5 -0.28 TO-92 VP0808M -80 5 -0.31 TO-237 1 SOURCE
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VP0808
O-205AD)
VP0808B
VP0808L
VP0808M
O-237
VPDV10
O-226AA)
vp0808M
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VP1008M
Abstract: VP1008
Text: am sA VP1008 s e rie s P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BR DSS VP1008B -100 VP1008L VP1008M T TO-39 (TO-205AD) BOTTOM VIEW •d (A) PACKAGE 5 -0.79 TO-39 -100 5 -0.28 TO-92 -100 5 -0.31 TO-237 1 SOURCE 2 GATE 3 & CASE-DRAIN
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VP1008B
VP1008L
VP1008M
VP1008
O-205AD)
O-237
VPDV10
O-226AA)
VP1008M
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Untitled
Abstract: No abstract text available
Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V {B R )D S S (V ) rD S (on) Max (Q) I d (A) V GS ( t h ) ( V ) VP0808L -8 0 5 @ V Gs = - 1 0 V - 2 t o -4 .5 -0 .2 8 VP1Q08L -1 0 0 5 @ V qs = - 1 0 V - 2 to -4 .5
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VP0808L,
VP1008L
VP0808L
VP1Q08L
S-04279--
16-Jui-01
O-226AA)
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VQ2006J
Abstract: 0AI41 VQ2006P 25C22
Text: SI LI CÔN IX INC IflE D 0254735 00141 43 T C T 'S iB c o n ix VQ2006 SERIES J m m - in c o rp o ra te d P-Channel Enhancement-Mode MOS Transistor Arrays PRODUCT SUMMARY PART NUMBER VQ2006J VQ2006P 14-PIN DIP SIDE BRAZE Id A PACKAGE -0.41 Plastic V(BR)DSS TDS(ON)
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VQ2006
VQ2006J
VQ2006P
VPDV10
2S473S
0ai4143
14-PIN
0AI41
25C22
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