BSS92
Abstract: TP1220L TP2020L VP2020L TP/VP2020L
Text: TP1220L, TP/VP2020L, BSS92 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L -120 20 @ VGS = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGS = -4.5 V -1 to -2.4 -0.12
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O226AA)
P-37994--Rev.
BSS92
TP1220L
TP2020L
VP2020L
TP/VP2020L
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BSS92
Abstract: marking s92 VP2020L 2020L S0427
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15
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VP2020L,
BSS92
VP2020L
O-226AA)
S-04279--Rev.
16-Jun-01
BSS92
marking s92
VP2020L
2020L
S0427
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TP2020L
Abstract: bss92 VP2020L TP1220L
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4
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PDF
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O-226AA)
P-37994--Rev.
08-Aug-94
TP2020L
bss92
VP2020L
TP1220L
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BSS92
Abstract: TP2020L TP1220L VP2020L
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4
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PDF
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O-226AA)
S-52426--Rev.
14-Apr-97
BSS92
TP2020L
TP1220L
VP2020L
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bss92
Abstract: VP2020L 2020L
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15
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VP2020L,
BSS92
VP2020L
18-Jul-08
bss92
VP2020L
2020L
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vp2020l
Abstract: No abstract text available
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4
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Original
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PDF
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O-226AA)
S-52426--Rev.
14-Apr-97
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BSS92
Abstract: VP2020L
Text: VP2020L, BSS92 Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8
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VP2020L,
BSS92
VP2020L
O-226AA)
S-00199--Rev.
1-Jan-00
BSS92
VP2020L
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vp2020l
Abstract: BSS92
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2020L –200 20 @ VGS = –4.5 V –0.8 to –2.5 –0.12 BSS92 –200 20 @ VGS = –10 V –0.8 to –2.8 –0.15
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VP2020L,
BSS92
VP2020L
O-226AA
08-Apr-05
BSS92
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vp2020l
Abstract: IC 6201
Text: VPDQ20 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • VP2020L, BSS92 Single Chip • Available as VPDQ1CHP DEVICE TYPICAL CHARACTERISTICS 6-198 O u tp u t C h a ra cte ristics O hm ic Region C h a ra c te ris tic s V DS (V) V DS (V)
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VPDQ20
O-226AA)
VP2020L,
BSS92
VPDQ20
125X1
vp2020l
IC 6201
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Untitled
Abstract: No abstract text available
Text: J ffiS S b VP2020L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V yp -2 0 0 20 V (BR)DSS TO-92 (TO-226AA) BOTTOM VIEW •d (A) - 0 .1 2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20 3 1 ABSOLUTE MAXIMUM RATINGS (TA 25°C Unless Otherwise Noted)
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VP2020L
O-226AA)
VPDQ20
100-C
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TP2020L
Abstract: No abstract text available
Text: TP1220L, TP2020L P-Channel Enhancement-Mode MOS Transistors_ _ PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS PART NUMBER rDS<ON) (Ù ) •d (A) TP1220L -120 20 -0.12 TP2020L -200 20 -0.12 BOTTOM VIEW (tT ? ) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20
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TP1220L,
TP2020L
O-226AA)
TP1220L
VPDQ20
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p-channel mosfet bss92
Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
Text: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5
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PDF
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VP2020L,
BSS92
VP2020L
O-226AA
2410L
S-04279--
16-Jun-01
p-channel mosfet bss92
vishay siliconix code marking to-92
bss92
70210
VP2410
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VP2020
Abstract: vp2020l
Text: SILICONIX INC ÔSS473S 1ÛE D 0ümi2S VP2020 SERIES C7SiRcc3nix J.Æ P-Channel Enhancement-Mode MOS Transistors in c o rp o ra te d " T -3 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER Ö V BR DSS fDS(ON) (fl) (V) >D (A) PACKAGE TO-2Q6AC (TO-52)
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SS473S
VP2020
VP2020L
VP2020E
O-206AC
VPDQ20
VP2020E.
300Ms,
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TP2020L
Abstract: VP2020L BSS92 TP1220L TF1725
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V
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tp1220l,
tp/vp2020l,
bss92
TP1220L
TP2020L
VP2020L
BSS92
-100V
O-226AA)
S-52426â
TF1725
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Untitled
Abstract: No abstract text available
Text: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)
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BSS92
TP2020L
TP1220L
VP2020L
VPDQ20.
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Untitled
Abstract: No abstract text available
Text: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0
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TP1220L,
TP/VP2020L,
BSS92_
TP1220L
TP2020L
VP2020L
BSS92
P-37994--
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