vp0109
Abstract: VP0109ND
Text: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 Die† -40V 8.0Ω -0.5A VP0104N3 — -60V 8.0Ω -0.5A VP0106N3 — -90V 8.0Ω -0.5A VP0109N3 VP0109ND
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VP0104
VP0106
VP0109
VP0104N3
VP0106N3
VP0109N3
VP0109ND
VP0109ND
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VP0104
Abstract: VP0104N3 VP0106 VP0106N3 VP0109 VP0109N3 VP0109ND
Text: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) -40V 8.0Ω -60V -90V Order Number / Package TO-92 Die† -0.5A VP0104N3 — 8.0Ω -0.5A VP0106N3 — 8.0Ω -0.5A VP0109N3 VP0109ND
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VP0104
VP0106
VP0109
VP0104N3
VP0106N3
VP0109N3
VP0109ND
VP0104
VP0104N3
VP0106
VP0106N3
VP0109
VP0109N3
VP0109ND
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VP0106
Abstract: VP0109ND VP0104N3 VP0104 VP0106N3 VP0109 VP0109N3 VP0109N
Text: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 Die† -40V 8.0Ω -0.5A VP0104N3 — -60V 8.0Ω -0.5A VP0106N3 — -90V 8.0Ω -0.5A VP0109N3 VP0109ND
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VP0104
VP0106
VP0109
VP0104N3
VP0106N3
VP0109N3
VP0109ND
VP0106
VP0109ND
VP0104N3
VP0104
VP0106N3
VP0109
VP0109N3
VP0109N
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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SIVP
Abstract: No abstract text available
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
DSFP-VP0109
A020209
SIVP
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Untitled
Abstract: No abstract text available
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
VP0109
DSFP-VP0109
A020408
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vp0109
Abstract: VP0109ND
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
DSFP-VP0109
A091508
VP0109ND
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sivp
Abstract: vp0109
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
DSFP-VP0109
A012409
sivp
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VP0109ND
Abstract: No abstract text available
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
VP0109
DSFP-VP0109
A030509
VP0109ND
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SIVP
Abstract: marking n3 TRANSISTOR N3 VP0109 125OC VP0109N3-G VP0109ND
Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP0109
VP0109
DSFP-VP0109
A052109
SIVP
marking n3
TRANSISTOR N3
125OC
VP0109N3-G
VP0109ND
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VP0104N5
Abstract: VP0109ND
Text: , fine. 4/ P-Channel Enhancement-Mode Vertical DMOS Power FET's Product Summary Order Number /Package BVDSS/ RDS ON ID(ON (max) BVDGS (mini TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP -40V 811 -Q.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5 VP0104N6 VP0104N7
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O-220
VP0104N2
VP0104N9
VP0104N3
VP0104N5
VP0106N2
VP0106N9
VP0106N3
VP0106N5
VP0106N6
VP0104N5
VP0109ND
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VP0106N5
Abstract: VP0104N5 VP0106N2 VP0109N5 VP0109N2 VP0104N2 VP0106N7 p-channel DMOS VP0109N9 VP0104
Text: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-52 TO-92 TO-220 -40V 8Ω -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5 VP0104N6 VP0104N7 VP0104ND
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VP0104
VP0106
VP0109
O-220
VP0104N2
VP0104N9
VP0104N3
VP0104N5
VP0104N6
VP0104N7
VP0106N5
VP0104N5
VP0106N2
VP0109N5
VP0109N2
VP0104N2
VP0106N7
p-channel DMOS
VP0109N9
VP0104
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SW7 357
Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
Text: Chapter 19 – Die Specifications DMOS Die Specifications Selector Guide VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 AF03 LR6 LR7 HT04 HV15/HV16/HV18 HV202 HV204/HV217/HV218/HV227/HV228 HV207 HV208 HV209 HV21/HV22 HV31/49 HV34 HV45/HV46
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VF01/VF06/VF21/VF25
VF22/LND1/LP07
VF05/VF13/VF26/TN07
VF32/LNE1/LP08
HV15/HV16/HV18
HV202
HV204/HV217/HV218/HV227/HV228
HV207
HV208
HV209
SW7 357
HV803
ausi die attach
CSI 2702
HV208
HV82
38495
VF01
VP03
AF03
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VP0109N9
Abstract: VP0109N3 vp0109n2 VP0104 VP0104N3 VP0106 VP0106N3 VP0109 VP0109N5 THV-150
Text: VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-52 TO-92 TO-220 Quad C-DIP* Die† -40V 8.0Ω -0.5A — — VP0104N3 — VP0104N7 VP0104ND -60V
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VP0104
VP0106
VP0109
O-220
VP0104N3
VP0104N7
VP0104ND
VP0106N3
VP0106N7
VP0106ND
VP0109N9
VP0109N3
vp0109n2
VP0104
VP0104N3
VP0106
VP0106N3
VP0109
VP0109N5
THV-150
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VP0104
Abstract: VP0109 VP0109ND TELEDYNE VP0104N3 VP0104ND VP0106 VP0106N3 VP0106ND VP0109N3
Text: 2fi£ D T E LE DY NE COMPONENTS • S11?bQd GD0b4S2 - d l T-29-25 VP0104, VP0106 VP0109 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION TO-22CAA TO-92 Plastic Package VP0104N3 VP0104ND -40V, 8.0 ohm
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T-29-25
VP0104,
VP0106
VP0109
O-22CAA
VP0104N3
VP0106N3
VP0109N3
VP0104ND
VP0106ND
VP0104
VP0109
VP0109ND
TELEDYNE
VP0109N3
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VP0106N5
Abstract: VP0104N5 VP0109N2 VP0109N5 VP0104N2 VP0106N2 VP0109N9 cmo60 VP0109ND vp0106N3
Text: _ =JJJi — _ — " ^ VP0104 VP0106 VPQ 1Q Q ^ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8Q -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5
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VP0104
VP0106
VP0104N2
VP0106N2
VP0109N2
VP0104N9
VP0106N9
VP0109N9
VP0104N3
VP0106N3
VP0106N5
VP0104N5
VP0109N5
cmo60
VP0109ND
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VP0104N5
Abstract: VP0106N5 VP0109N2 VP0104N2 VP01A
Text: VP 01A Lj Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss ! BVdgs ^DSfON) max) *D(ON) (min) TO-39 TO-52 TO-92 TO-220 -40V 8ÌÌ -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5
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VP0104N2
VP0106N2
VP0109N2
VP0104N9
VP0106N9
VP0109N9
VP0104N3
VP0106N3
VP0109N3
O-220
VP0104N5
VP0106N5
VP01A
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VP0106A
Abstract: p0109
Text: VP0104 VP0106 VP0109 Supertex: inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ Order Number / Package ^DS O N ^D(ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad C-DIP* Die+ -40V 8.0£2 -0.5A — — VP0104N3 — VP0104N7 VP0104ND
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VP0104
VP0106
VP0109
VP0109N2
VP0109N9
VP0104N3
VP0106N3
VP0109N3
O-220
VP0109N5
VP0106A
p0109
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VP0104N5
Abstract: VP0106N5 VP0109ND VN1310N3 VP0104N3 VP0106N2 VN1220ND VN1304N2 VN1304N3 VN1304ND
Text: - 338 - Ta=25tC f t H « ti: % % 1/ Vd s or Vg s * /CH Vd g (V) (V) (A) % V I d ss Ig s s Pd Id V g s th) min * /CH <W) (nA) Vg s (V) (m a ) Vd s (V) (V) max (V) fó Id (ntA) í# Ï Ds(on) Vd s = Vg s 14 (Ta=25°C) g fs Id (oií) Ciss Coss & Crss V g s =0
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VN1220ND
VN1304N2
T0-39
VN1304N3
VN1304ND
VN1306N2
VP0106N5
O-220
VP0106ND
VP0109N2
VP0104N5
VP0109ND
VN1310N3
VP0104N3
VP0106N2
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VP0104N5
Abstract: vp0104n2 VP0106N2 VN0655ND VN0660N2 VN0660N3 VN0660N5 VN0660ND VN1106N2 VN1110N2
Text: - f §y £ *t € % VN0655ND SUPERTEX N ± ft £ Vds or Vd g Vg s V (V) is iTa=25°C) Pd Id Ig s s V g s th) I dss * /CH * /CH (A) iff) (nA) (V) (V) ft Id (on) g fs Ciss Coss Crss Vg s =0 Vg s (V) *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) Id (A)
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VN0655ND
VN0660N2
VN0660N3
VN0660N5
206N3
VP0106N5
O-220
VP0106ND
VP0109N2
VP0109N3
VP0104N5
vp0104n2
VP0106N2
VN0660ND
VN1106N2
VN1110N2
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VP0106N2
Abstract: VP01A VP0109ND
Text: 0 Supertex inc. /p \ ^ VP 01A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDss1 Order Number / Package RdS ON *D(ON| b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8£2 8Q 8a -0.5A VP0104N2 VP0104N9 VP0104N3
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VP0104N2
VP0106N2
VP0109N2
VP0104N9
VP0106N9
VP0109N9
VP0104N3
VP0106N3
VP0109N3
O-220
VP01A
VP0109ND
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VP0104N5
Abstract: VP0104
Text: ^Supertex inc. VP0104 VP0106 VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON Id (ON) b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt -40V 8 n -0.5A VP0104N2 VP0104N9
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VP0104
VP0106
VP0109
VP0104N2
VP0106N2
VP0109N2
VP0104N9
VP0106N9
VP0109N9
VP0104N3
VP0104N5
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M0090
Abstract: No abstract text available
Text: T E LE D Y N E COMPONENTS •. 2 fl£ ■ . D ■ f l ci l ? t i O d . .1 ■■■ Q 0 Q fci4a2 -i. 3 _ B § T -2 9 -2 5 — VP0104, VP0I06 SEMICONDUCTOR_ VPOIQ9 P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION
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VP0104,
VP0I06
O-22CAA
VP0104N3
VP0104NÖ
106N3
VP0106ND
VP0109N3
VP0109ND
OT-143)
M0090
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